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Effect Transistors. MRF18060BS Datasheet

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Effect Transistors. MRF18060BS Datasheet







MRF18060BS Transistors. Datasheet pdf. Equivalent




MRF18060BS Transistors. Datasheet pdf. Equivalent





Part

MRF18060BS

Description

RF Power Field Effect Transistors

Manufacture

Motorola

Datasheet
Download MRF18060BS Datasheet


Motorola MRF18060BS

MRF18060BS; MOTOROLA SEMICONDUCTOR TECHNICAL DATA O rder this document by MRF18060B/D The RF MOSFET Line RF Power Field Effect Tr ansistors N–Channel Enhancement–Mod e Lateral MOSFETs Designed for PCN and PCS base station applications from freq uencies up to 1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amp lifier applications. To be used in clas s AB for PCN–PCS/cellu.


Motorola MRF18060BS

lar radio and WLL applications. Specifie d for GSM1930 – 1990 MHz. • GSM Per formance, Full Frequency Band (1930 – 1990 MHz) Power Gain — 13 dB (Typ) @ 60 Watts (CW) Efficiency — 45% (Typ) @ 60 Watts (CW) • Internally Matched , Controlled Q, for Ease of Use • Hig h Gain, High Efficiency and High Linear ity • Integrated ESD Protection: Clas s 2 Human Body Model, Class M3 Mac.


Motorola MRF18060BS

hine Model • Ease of Design for Gain a nd Insertion Phase Flatness • Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Wa tts (CW) Output Power • Excellent The rmal Stability MRF18060B MRF18060BS 60 W, 1.90 – 1.99 GHz, 26 V LATERAL N CHANNEL BROADBAND RF POWER MOSFETs CAS E 465–04, STYLE 1 (MRF18060B) CASE 4 65A–04, STYLE 1 (MRF18060BS) MAXIMUM RATINGS Rating Drain–Source Vol.



Part

MRF18060BS

Description

RF Power Field Effect Transistors

Manufacture

Motorola

Datasheet
Download MRF18060BS Datasheet




 MRF18060BS
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF18060B/D
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
Designed for PCN and PCS base station applications from frequencies up to
1.8 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for PCN–PCS/cellular radio and WLL
applications. Specified for GSM1930 – 1990 MHz.
GSM Performance, Full Frequency Band (1930 – 1990 MHz)
Power Gain — 13 dB (Typ) @ 60 Watts (CW)
Efficiency — 45% (Typ) @ 60 Watts (CW)
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection: Class 2 Human Body Model, Class M3
Machine Model
Ease of Design for Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 60 Watts (CW) Output Power
Excellent Thermal Stability
MRF18060B
MRF18060BS
60 W, 1.90 – 1.99 GHz, 26 V
LATERAL N–CHANNEL
BROADBAND
RF POWER MOSFETs
CASE 465–04, STYLE 1
(MRF18060B)
CASE 465A–04, STYLE 1
(MRF18060BS)
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ TC > = 25°C
Derate above 25°C
Storage Temperature Range
Operating Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VDSS
VGS
PD
Tstg
TJ
Symbol
RθJC
Value
65
+15, –0.5
180
1.03
– 65 to +150
200
Max
0.97
Unit
Vdc
Vdc
Watts
W/°C
°C
°C
Unit
°C/W
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
©MMOotTorOolRa,OInLc.A19R99F DEVICE DATA
MRF18060B MRF18060BS
1





 MRF18060BS
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 µAdc)
Zero Gate Voltage Drain Current
(VDS = 26 Vdc, VGS = 0)
Gate–Source Leakage Current
(VGS = 5 Vdc, VDS = 0)
V(BR)DSS
65
— Vdc
IDSS
6 µAdc
IGSS
1 µAdc
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 300 µAdc)
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 500 mAdc)
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 2 Adc)
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
VGS(th)
2
4 Vdc
VGS(Q)
2.5
3.9
4.5 Vdc
VDS(on)
0.27
Vdc
gfs — 4.7 — S
DYNAMIC CHARACTERISTICS
Input Capacitance (Including Input Matching Capacitor in Package) (1)
Ciss
160
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Output Capacitance (1)
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Coss — 740 —
Reverse Transfer Capacitance
(VDS = 26 Vdc, VGS = 0, f = 1 MHz)
Crss
2.7
pF
pF
pF
FUNCTIONAL TESTS (In Motorola Test Fixture)
Common–Source Amplifier Power Gain @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1930 – 1990 MHz)
Drain Efficiency @ 60 W (2)
(VDD = 26 Vdc, IDQ = 500 mA, f = 1930 – 1990 MHz)
Input Return Loss (2)
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA,
f = 1930 – 1990 MHz)
Gps dB
11.5 13
η%
40 45 —
IRL dB
10 — —
Output Mismatch Stress
(VDD = 26 Vdc, Pout = 60 W CW, IDQ = 500 mA VSWR = 10:1,
All Phase Angles at Frequency of Tests)
Ψ
No Degradation In Output Power
Before and After Test
(1) Part is internally matched both on input and output.
(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch–to–batch
consistency.
MRF18060B MRF18060BS
2
MOTOROLA RF DEVICE DATA





 MRF18060BS
R1
VGG
RF
INPUT
Z1
R2 C1
C9
Z2
R3
Z3
C5
C4
Z5
Z4
DUT
VDD
+
C3 C2
RF
Z6
C7
Z7
OUTPUT
C8
C1, C3
C2
C4, C8
C5
C6
10 pF, 100B Chip Capacitor
10 mF, 35 V Electrolytic Tantalum Capacitor
1.2 pF, 100B Chip Capacitor
1.0 pF, 100B Chip Capacitor
2.2 pF, 100B Chip Capacitor
C7, C9
R1, R2
R3
PCB
0.3 pF, 100B Chip Capacitor
10 k, Chip Resistor 0805
1.0 k, Chip Resistor 0805
Teflon® Glass
Figure 1. 1930 – 1990 MHz Test Fixture Schematic
VBIAS
A1
Ground
R1
R2
C9
C4
C1
R3
C5
C2
C6
C3
C7
C8
MRF18060
Figure 2. 1930 – 1990 MHz Test Fixture Component Layout
VSUPPLY
A2
Ground
MOTOROLA RF DEVICE DATA
MRF18060B MRF18060BS
3



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