Lateral MOSFET. UGF18060 Datasheet

UGF18060 MOSFET. Datasheet pdf. Equivalent

UGF18060 Datasheet
Recommendation UGF18060 Datasheet
Part UGF18060
Description Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Feature UGF18060; UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for.
Manufacture CREE
Datasheet
Download UGF18060 Datasheet





CREE UGF18060
UGF18060
60W, 1.8 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with
a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier
Power Amplifiers in Class AB operation.
ALL GOLD metal system for highest reliability
Industry standard package
Suggested alternative to the MRF18060
Internally matched for repeatable manufacturing
High gain, high efficiency and high linearity
Application Specific Performance, 1.88 GHz
GSM:
60 Watts
12.5 dB
EDGE:
25 Watts
12.5 dB
IS95 CDMA:
7.5 Watts 12.5 dB
CDMA2000:
TBD Watts 12.5 dB
Package Type 440171
PN: UGF18060F
Package Type 440172
PN: UGF18060P
Rev 2.
UGF18060



CREE UGF18060
UGF18060
Maximum Ratings
Rating
Drain to Source Voltage, Gate connected to Source
Gate to Source Voltage
Total Device Dissipation @ Tcase = 60oC
Derate above 60oC
Storage Temperature Range
Operating Junction Temperature
Symbol
VDSS
VGSS
PD
Tstg
TJ
Value
65
+15 to –0.5
65
0.83
-65 to +150
200
Unit
Volts
Volts
Watts
W/oC
oC
oC
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
ΘJC
Typical
-
Unit
oC/W
Electrical DC Characteristics (TC =25°C unless otherwise specified)
Rating
Symbol
Min
Drain to Source Breakdown Voltage
(VGS=0, ID=1mA)
Drain to Source Leakage current
(VDS=26V, VGS=0)
Gate to Source Leakage current
(VGS=15V, VDS=0)
Threshold Voltage
(VDS=10V, ID=1mA)
Gate Quiescent Voltage
(VDS=26 V, ID=900mA)
Drain to Source On Voltage
(VGS=10V, ID=2A)
Forward Transconductance
(VDS=10V, ID=5A)
BVDSS
IDSS
IGSS
VGS(th)
VGS(Q)
VDS(on)
Gm
65
-
-
-
3.0
-
-
Typ
-
-
-
3.5
4.0
0.15
-
Max Unit
- Volts
1.0 mA
1.0 µA
- Volts
6.0 Volts
- Volts
-S
AC Characteristics (TC =25°C unless otherwise specified)
Rating
Symbol
Input Capacitance *
(VDS=26V, VGS=0V, f = 1MHz)
Output capacitance *
(VDS= 26V, VGS=0V, f = 1MHz)
Feedback capacitance *
(VDS=26V, VGS=0V, f = 1MHz)
* Part is internally matched on input and output.
CISS
COSS
CRSS
Min
-
-
-
Typ Max Unit
- - pF
350 - pF
- - pF
Rev 2.
UGF18060



CREE UGF18060
UGF18060
RF and Functional Tests (Tc=25°C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating
Symbol
Min
Typ Max Unit
CW Small Signal Gain, Pout=10W
VDD=26V, IDQ=500mA
CW Power Gain, Pout = 60 W
VDD=26V, IDQ=500mA
CW Drain Efficiency, Pout = 60 W,
f=1880 MHz, VDD=26V, IDQ=500mA,
Two-Tone Common-Source Amplifier Power Gain
VDD=26V, IDQ=500mA, Pout = 60 W PEP
f1 =1880 MHz and f2=1880.1 MHz
Two-Tone Intermodulation Distortion
VDD=26V, IDQ=500mA, Pout = 60 W PEP
f1 =1880 MHz and f2=1880.1 MHz
Two-Tone Drain Efficiency
VDD=26V, IDQ=500mA, Pout = 60 W PEP
f1 =1880 MHz and f2=1880.1 MHz
Input Return Loss
VDD =26V, Pout = 60 W PEP, IDQ=500mA
f1 =1805 MHz and 1880 MHz, Tone Spacing =
100kHz
Load Mismatch Tolerance
VDS=26V, IDQ= 500 mA, Pout=60W, f=1880 MHz
GL
GP
ηD
GTT
IMD
ηD2Τ
IRL
VSWR*
-
-
-
-
-
-
-
10:1
12.5
11.5
36
12
-28
38
-10
-
- dB
- dB
-%
- dB
- dBc
-%
- dB
-Ψ
Note (unless otherwise specified):
1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate
precautions in handling, packaging and testing MOS devices must be observed.
Rev 2.
UGF18060





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