Document
UGF18060
60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation.
• ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF18060 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity
• Application Specific Performance, 1.88 GHz
GSM:
60 Watts
12.5 dB
EDGE:
25 Watts
12.5 dB
IS95 CDMA:
7.5 Watts 12.5 dB
CDMA2000:
TBD Watts 12.5 dB
Package Type 440171 PN: UGF18060F
Package Type 440172 PN: UGF18060P
Rev 2.
UGF18060
UGF18060
Maximum Ratings
Rating
Drain to Source Voltage, Gate connected to Source Gate to Source Voltage Total Device Dissipation @ Tcase = 60oC Derate above 60oC Storage Temperature Range Operating Junction Temperature
Symbol VDSS VGSS
PD
Tstg TJ
Value
65 +15 to –0.5
65 0.83 -65 to +150 200
Unit
Volts
Volts
Watts W/oC
oC oC
Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case
Symbol ΘJC
Typical -
Unit oC/W
Electrical DC Characteristics (TC =25°C unless otherwise specified)
Rating
Symbol
Min
Drain to Source Breakdown Voltage (VGS=0, ID=1mA) Drain to Source Leakage current (VDS=26V, VGS=0) Gate to Source Leakage current (VGS=15V, VDS=0) Threshold Voltage (VDS=10V, ID=1mA) Gate Quiescent Voltage (VDS=26 V, ID=900mA) Drain to Source On Voltage (VGS=10V, ID=2A) Forward Transconductance (VDS=10V, ID=5A)
BVDSS IDSS IGSS VGS(th) VGS(Q)
VDS(on) Gm
65 3.0 -
Typ -
3.5 4.0 0.15
-
Max Unit - Volts
1.0 mA 1.0 µA
- Volts 6.0 Volts
- Volts -S
AC Characteristics (TC =25°C unless otherwise specified)
Rating
Symbol
Input Capacitance * (VDS=26V, VGS=0V, f = 1MHz) Output capacitance * (VDS= 26V, VGS=0V, f = 1MHz) Feedback capacitance * (VDS=26V, VGS=0V, f = 1MHz) * Part is internally matched on input and output.
CISS COSS CRSS
Min -
Typ Max Unit - - pF
350 - pF - - pF
Rev 2.
UGF18060
UGF18060
RF and Functional Tests (Tc=25°C unless otherwise specified, Cree Microwave Broadband Fixture)
Rating
Symbol
Min
Typ Max Unit
CW Small Signal Gain, Pout=10W VDD=26V, IDQ=500mA CW Power Gain, Pout = 60 W VDD=26V, IDQ=500mA CW Drain Efficiency, Pout = 60 W, f=1880 MHz, VDD=26V, IDQ=500mA, Two-Tone Common-Source Amplifier Power Gain VDD=26V, IDQ=500mA, Pout = 60 W PEP f1 =1880 MHz and f2=1880.1 MHz Two-Tone Intermodulation Distortion VDD=26V, IDQ=500mA, Pout = 60 W PEP f1 =1880 MHz and f2=1880.1 MHz
Two-Tone Drain Efficiency VDD=26V, IDQ=500mA, Pout = 60 W PEP f1 =1880 MHz and f2=1880.1 MHz
Input Return Loss VDD =26V, Pout = 60 W PEP, IDQ=500mA f1 =1805 MHz and 1880 MHz, Tone Spacing = 100kHz
Load Mismatch Tolerance VDS=26V, IDQ= 500 mA, Pout=60W, f=1880 MHz
GL GP ηD GTT IMD ηD2Τ
IRL VSWR*
-
10:1
12.5 11.5 36 12 -28 38
-10 -
- dB - dB -% - dB - dBc -%
- dB -Ψ
Note (unless otherwise specified): 1. Source and load impedance shall be 50 ohms.
*No degradation in device performance after test.
CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate precautions in handling, packaging and testing MOS devices must be observed.
Rev 2.
UGF18060
Product Dimensions
Package Number 440171
UGF18060
Package Number 440172
Rev 2.
UGF18060
.