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UGF18060 Dataheets PDF



Part Number UGF18060
Manufacturers CREE
Logo CREE
Description Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET
Datasheet UGF18060 DatasheetUGF18060 Datasheet (PDF)

UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. • ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF18060 • Internally matched for repeatable manufacturing • High gain, high effi.

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UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. • ALL GOLD metal system for highest reliability • Industry standard package • Suggested alternative to the MRF18060 • Internally matched for repeatable manufacturing • High gain, high efficiency and high linearity • Application Specific Performance, 1.88 GHz GSM: 60 Watts 12.5 dB EDGE: 25 Watts 12.5 dB IS95 CDMA: 7.5 Watts 12.5 dB CDMA2000: TBD Watts 12.5 dB Package Type 440171 PN: UGF18060F Package Type 440172 PN: UGF18060P Rev 2. UGF18060 UGF18060 Maximum Ratings Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage Total Device Dissipation @ Tcase = 60oC Derate above 60oC Storage Temperature Range Operating Junction Temperature Symbol VDSS VGSS PD Tstg TJ Value 65 +15 to –0.5 65 0.83 -65 to +150 200 Unit Volts Volts Watts W/oC oC oC Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol ΘJC Typical - Unit oC/W Electrical DC Characteristics (TC =25°C unless otherwise specified) Rating Symbol Min Drain to Source Breakdown Voltage (VGS=0, ID=1mA) Drain to Source Leakage current (VDS=26V, VGS=0) Gate to Source Leakage current (VGS=15V, VDS=0) Threshold Voltage (VDS=10V, ID=1mA) Gate Quiescent Voltage (VDS=26 V, ID=900mA) Drain to Source On Voltage (VGS=10V, ID=2A) Forward Transconductance (VDS=10V, ID=5A) BVDSS IDSS IGSS VGS(th) VGS(Q) VDS(on) Gm 65 3.0 - Typ - 3.5 4.0 0.15 - Max Unit - Volts 1.0 mA 1.0 µA - Volts 6.0 Volts - Volts -S AC Characteristics (TC =25°C unless otherwise specified) Rating Symbol Input Capacitance * (VDS=26V, VGS=0V, f = 1MHz) Output capacitance * (VDS= 26V, VGS=0V, f = 1MHz) Feedback capacitance * (VDS=26V, VGS=0V, f = 1MHz) * Part is internally matched on input and output. CISS COSS CRSS Min - Typ Max Unit - - pF 350 - pF - - pF Rev 2. UGF18060 UGF18060 RF and Functional Tests (Tc=25°C unless otherwise specified, Cree Microwave Broadband Fixture) Rating Symbol Min Typ Max Unit CW Small Signal Gain, Pout=10W VDD=26V, IDQ=500mA CW Power Gain, Pout = 60 W VDD=26V, IDQ=500mA CW Drain Efficiency, Pout = 60 W, f=1880 MHz, VDD=26V, IDQ=500mA, Two-Tone Common-Source Amplifier Power Gain VDD=26V, IDQ=500mA, Pout = 60 W PEP f1 =1880 MHz and f2=1880.1 MHz Two-Tone Intermodulation Distortion VDD=26V, IDQ=500mA, Pout = 60 W PEP f1 =1880 MHz and f2=1880.1 MHz Two-Tone Drain Efficiency VDD=26V, IDQ=500mA, Pout = 60 W PEP f1 =1880 MHz and f2=1880.1 MHz Input Return Loss VDD =26V, Pout = 60 W PEP, IDQ=500mA f1 =1805 MHz and 1880 MHz, Tone Spacing = 100kHz Load Mismatch Tolerance VDS=26V, IDQ= 500 mA, Pout=60W, f=1880 MHz GL GP ηD GTT IMD ηD2Τ IRL VSWR* - 10:1 12.5 11.5 36 12 -28 38 -10 - - dB - dB -% - dB - dBc -% - dB -Ψ Note (unless otherwise specified): 1. Source and load impedance shall be 50 ohms. *No degradation in device performance after test. CAUTION - MOS Devices are susceptible to damage from Electrostatic Discharge (ESD). Appropriate precautions in handling, packaging and testing MOS devices must be observed. Rev 2. UGF18060 Product Dimensions Package Number 440171 UGF18060 Package Number 440172 Rev 2. UGF18060 .


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