STGWA25H120F2

STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data 72       72ORQJOHDGV Features Maximum junction temperature: TJ = 175 °C High speed switching series Minimized tail current VCE(sat) = 2.1 V (typ.) @ IC = 25 A 5 µs minimum short circuit withstand time at TJ=150 °C Tight parameters distribution Safe paralleling Low thermal resistance Figure 1. Internal schematic diagram C (2) G (1) SC12850 E (3) Applications Uninterruptible power supply Welding machines Photovoltaic inverters Power factor correction High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Order code STGW25H120F2 STGWA25H120F2 Table 1. Device summary Marking Package G25H120F2 TO-247 G25H120F2 TO-247 long leads Packaging Tube Tube March 2015 This is information on a product in full production. DocID026003 Rev 4 1/17 www.st.com 17 Contents Contents STGW25H120F2, STGWA25H120F2 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....