field-stop IGBT. STGWA25H120F2 Datasheet

STGWA25H120F2 IGBT. Datasheet pdf. Equivalent

STGWA25H120F2 Datasheet
Recommendation STGWA25H120F2 Datasheet
Part STGWA25H120F2
Description Trench gate field-stop IGBT
Feature STGWA25H120F2; STGW25H120F2, STGWA25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet .
Manufacture STMicroelectronics
Datasheet
Download STGWA25H120F2 Datasheet





STMicroelectronics STGWA25H120F2
STGW25H120F2,
STGWA25H120F2
Trench gate field-stop IGBT, H series
1200 V, 25 A high speed
Datasheet - production data
72






72ORQJOHDGV
Features
Maximum junction temperature: TJ = 175 °C
High speed switching series
Minimized tail current
VCE(sat) = 2.1 V (typ.) @ IC = 25 A
5 µs minimum short circuit withstand time at
TJ=150 °C
Tight parameters distribution
Safe paralleling
Low thermal resistance
Figure 1. Internal schematic diagram
C (2)
G (1)
SC12850
E (3)
Applications
Uninterruptible power supply
Welding machines
Photovoltaic inverters
Power factor correction
High frequency converters
Description
These devices are IGBTs developed using an
advanced proprietary trench gate field-stop
structure. These devices are part of the H series
of IGBTs, which represent an optimum
compromise between conduction and switching
losses to maximize the efficiency of high
switching frequency converters. Moreover, a
slightly positive VCE(sat) temperature coefficient
and very tight parameter distribution result in
safer paralleling operation.
Order code
STGW25H120F2
STGWA25H120F2
Table 1. Device summary
Marking
Package
G25H120F2
TO-247
G25H120F2
TO-247 long leads
Packaging
Tube
Tube
March 2015
This is information on a product in full production.
DocID026003 Rev 4
1/17
www.st.com
17



STMicroelectronics STGWA25H120F2
Contents
Contents
STGW25H120F2, STGWA25H120F2
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
4 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.1 TO-247, package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
4.2 TO-247 long leads, package information . . . . . . . . . . . . . . . . . . . . . . . . . 14
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
2/17 DocID026003 Rev 4



STMicroelectronics STGWA25H120F2
STGW25H120F2, STGWA25H120F2
1 Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
VCES Collector-emitter voltage (VGE = 0)
IC Continuous collector current at TC = 25 °C
IC
ICP(1)
Continuous collector current at TC = 100 °C
Pulsed collector current
VGE Gate-emitter voltage
PTOT Total dissipation at TC = 25 °C
TSTG Storage temperature range
TJ Operating junction temperature
1. Pulse width limited by maximum junction temperature
1200
50
25
100
±20
375
-55 to 150
-55 to 175
Symbol
RthJC
RthJA
Table 3. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
0.4
50
Unit
V
A
A
A
V
W
°C
°C
Unit
°C/W
°C/W
DocID026003 Rev 4
3/17





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