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Voltage Diodes. 2CL3509H Datasheet

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Voltage Diodes. 2CL3509H Datasheet






2CL3509H Diodes. Datasheet pdf. Equivalent




2CL3509H Diodes. Datasheet pdf. Equivalent





Part

2CL3509H

Description

High Voltage Diodes



Feature


2CL3509H、2CL3512H High Voltage Diode s for Micro-Wave Oven ■ Features I F(AV) ● VRRM ● 350mA 9kV , 12kV High reliability ■ Outline Dime nsions and Mark Unit:mm 、 Code、 Lot No. φ7.5±0.5 Cathode Mark φ1 .2±0.03 ■ Applications ● Rectifi cation for high voltage power supply of magnetron in Micro wave oven and other s . 22min 22±0.5 22min Type 2CL3509H Code.
Manufacture

Tianjin zhonghuan semiconductor

Datasheet
Download 2CL3509H Datasheet


Tianjin zhonghuan semiconductor 2CL3509H

2CL3509H; T3509H Cathode Mark 2CL3512H T3512H .■() Limiting Values(Absolute Maximum Rating) gpd.sunwayinfo.com. cn Item Symbol Unit 2CL3509H 2CL 3512H Repetitive Peak Reverse Voltage VRRM kV 9 12 Average Forward Cur rent IF(AV) mA 350 ( 50HZ,,Ta 60℃﹡) (50HZHalf-sine wave, Resi stance load, Ta≤60℃) Forward Surg e Current IFSM A 30 ( 50HZ,,Ta=25℃) (50HZ Ha.


Tianjin zhonghuan semiconductor 2CL3509H

lf-sine wave,1cycle,Ta=25℃) Revers e Surge Current IRSM mA 100 (、WP=1m s, ,Ta=25℃) (WP=1ms, Rectangular-wa ve, One-shot, Ta=25℃) Virtual Junct ion Temperature T(vj) ℃ 130 Stora ge Temperature Tstg ℃ -40 ~ +130 : 0.6mm,50mm×50mm ,:0.5m/s. C ooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm×50mm×0.6mm Wind-cooled velo.


Tianjin zhonghuan semiconductor 2CL3509H

city is more than 0.5m/s ■ (Ta=25 ) Electrical Characteristics(Ta= 25℃ Unless otherwise specified) Item Symbol Unit Test Condition Peak Forward Voltage VFM V IFM=350mA Peak Reverse Current IRRM1 μA VRM =VRRM Avalanche Breakdown Voltage V BR) kV IR=100μA 2CL3509H 2CL35 12H ≤10 ≤12 ≤5 ≥9.5 ≥12.5 TIANJIN ZHONGHUAN SEMICONDUCTOR CO.,LTD. 2CL.

Part

2CL3509H

Description

High Voltage Diodes



Feature


2CL3509H、2CL3512H High Voltage Diode s for Micro-Wave Oven ■ Features I F(AV) ● VRRM ● 350mA 9kV , 12kV High reliability ■ Outline Dime nsions and Mark Unit:mm 、 Code、 Lot No. φ7.5±0.5 Cathode Mark φ1 .2±0.03 ■ Applications ● Rectifi cation for high voltage power supply of magnetron in Micro wave oven and other s . 22min 22±0.5 22min Type 2CL3509H Code.
Manufacture

Tianjin zhonghuan semiconductor

Datasheet
Download 2CL3509H Datasheet




 2CL3509H
2CL3509H2CL3512H
微波爐用高壓二極管 High Voltage Diodes for Micro-Wave Oven
特徵 Features
IFAV
VRRM
高可靠性
350mA
9kV ,12kV
High reliability
外形尺寸和印記 Outline Dimensions and Mark
單位 Unitmm
代號、批號 CodeLot No.
φ7.5±0.5
負極標誌 Cathode Mark
φ1.2±0.03
用途 Applications
微波爐及其他電子設備高壓電源整流用
Rectification for high voltage power supply
of magnetron in Micro wave oven and others
.
22min
22±0.5
22min
型號
Type
2CL3509H
代號
Code
T3509H
負極標誌
Cathode Mark
2CL3512H
T3512H
.極限值(絕對最大額定值)
Limiting ValuesAbsolute Maximum Rating
參數名稱
Item
符號 單位
Symbol Unit
2CL3509H
2CL3512H
反向重復峰值電壓
Repetitive Peak Reverse Voltage
VRRM
kV
9
12
正向平均電流
Average Forward Current
IF(AV)
mA 350
(正弦半波 50HZ,電阻負載,Ta60℃﹡)
(50HZHalf-sine wave, Resistance load, Ta60)
正向浪湧電流
Forward Surge Current
IFSM A 30
(正弦半波 50HZ,一個周期,Ta=25℃)
50HZ Half-sine wave,1cycle,Ta=25℃)
反向浪湧電流
Reverse Surge Current
IRSM mA 100
(方波、WP=1ms, 單脈衝,Ta=25)
(WP=1ms, Rectangular-wave, One-shot, Ta=25)
有效結溫
Virtual Junction Temperature
T(vj)
130
貯存溫度
Storage Temperature
Tstg
-40 ~ +130
散熱方式:將負極端子固定在厚度為 0.6mm,面積為50mm×50mm 以上的散熱片上,風冷條件:0.5m/s.
Cooling Requirement: Cathode terminal is fastened to radiating fin that size is more than 50mm×50mm×0.6mm Wind-cooled velocity is
more than 0.5m/s
電特性 Ta=25℃ 除非另有規定)
Electrical CharacteristicsTa=25Unless otherwise specified
參數名稱
符號 單位
測試條件
Item Symbol Unit Test Condition
正向峰值電壓
Peak Forward Voltage
VFM V
IFM=350mA
反向峰值電流
Peak Reverse Current
IRRM1
μA
VRM=VRRM
雪崩擊穿電壓
Avalanche Breakdown Voltage
VBR
kV
IR=100μA
2CL3509H
2CL3512H
10 12
5
9.5
12.5
天津中环半导体股份有限公司
TIANJIN ZHONGHUAN SEMICONDUCTOR CO.,LTD.




 2CL3509H
2CL3509H2CL3512H
■特性曲綫(典型) Characteristics(Typical)
400
Ta =25
300
200
2CL3512H
2CL3509H
100
0
0 3 6 9 12 15 18
VFMV
正向特性
Forward Characteristics
1.0
Ta =25
0.1
0.01
0.001
2CL3509H
2CL3512H
03
6 9 12 15
VRMkV
反向特性
Reverse Characteristics
400
300
200
100
0
0 20 40 60 80 100 120 140
Ta(℃)
正向平均電流降額曲綫
IFAVTa Derating
100
80
Ta =25
IR=100μA
N=100pcs.
60
2CL3509H
2CL3512H
40
20
0
12 14 16 18 20 22 24 26
V(BR)kV
擊穿電壓分佈
Breakdown Voltage Distribution
安全試驗 Safety Test
3mm 金屬箔卷在管體中央
3mm Wide metal film is rolled on the surface
middle of diode body
1.絕緣電阻試驗:AB 之間施加 500V 直流電壓,用絕
緣電阻表測,絕緣電阻大於 1000MΩ。
2.耐壓強度試驗:在絕緣油中進行,AB 之間施加峰值
15kV 的正弦半波電壓、1 分鐘,無擊穿或飛弧。
1.Insulation Resistance Test:500V DC voltage is
added between A and B. The measurement by
insulation resistance meter is big than 1000MΩ.
2.Resistance To Voltage Strength Test: 15kV half-
sine wave voltage is added between A and B for
one minute and no breakdown or arc in insulation
oil.
天津中环半导体股份有限公司
TIANJIN ZHONGHUAN SEMICONDUCTOR CO.,LTD.










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