DatasheetsPDF.com

Power Amplifier. AM42-0007 Datasheet

DatasheetsPDF.com

Power Amplifier. AM42-0007 Datasheet






AM42-0007 Amplifier. Datasheet pdf. Equivalent




AM42-0007 Amplifier. Datasheet pdf. Equivalent





Part

AM42-0007

Description

GaAs MMIC VSAT Power Amplifier



Feature


AM42-0007 GaAs MMIC VSAT Power Amplifier , 2.0 W 14.0 - 14.5 GHz Features High Linear Gain: 22 dB Typical High Satura ted Output Power: +33 dBm Typical High Power Added Efficiency: 22% Typical H igh P1dB: 32 dBm Typ. 50 Ω Input/Out put Broadband Matched Integrated Outpu t Power Detector Lead-Free Ceramic Bol t Down Package RoHS* Compliant and 260 °C Reflow Compatible.
Manufacture

MA-COM

Datasheet
Download AM42-0007 Datasheet


MA-COM AM42-0007

AM42-0007; Description The AM42-0007 is a three-st age MMIC linear power amplifier in a le ad-free, ceramic bolt down style hermet ic package. The AM42-0007 employs a ful ly matched chip with internally decoupl ed gate and drain bias networks and an output power detector. The AM42-0007 is designed to be operated from a constan t voltage drain supply. The AM42-0007 i s designed for use.


MA-COM AM42-0007

as an output stage or a driver, in appl ications for VSAT systems. This design is fully monolithic and requires a mini mum of external components. The AM42-00 07 is fabricated using a mature 0.5 mic ron GaAs MESFET process. The process fe atures full passivation for increased p erformance and reliability. This produc t is 100% RF tested to ensure complianc e to performance s.


MA-COM AM42-0007

pecifications. Ordering Information Par t Number AM42-0007 Package Ceramic Bol t Down Functional Schematic Rev. V8 VDGD1N,2D GGNNDD RFRIFNIN VGVGGG GNGDND GVNDDD1,2 GVNDDD3 RRFFOUOT UT VVDEDTE T VGDDND Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 Pin Name GND GND RF IN VGG GND VDD VDET RFOUT GND GND Desc ription DC and RF Ground DC and RF Grou nd RF Input Gate S.

Part

AM42-0007

Description

GaAs MMIC VSAT Power Amplifier



Feature


AM42-0007 GaAs MMIC VSAT Power Amplifier , 2.0 W 14.0 - 14.5 GHz Features High Linear Gain: 22 dB Typical High Satura ted Output Power: +33 dBm Typical High Power Added Efficiency: 22% Typical H igh P1dB: 32 dBm Typ. 50 Ω Input/Out put Broadband Matched Integrated Outpu t Power Detector Lead-Free Ceramic Bol t Down Package RoHS* Compliant and 260 °C Reflow Compatible.
Manufacture

MA-COM

Datasheet
Download AM42-0007 Datasheet




 AM42-0007
AM42-0007
GaAs MMIC VSAT Power Amplifier, 2.0 W
14.0 - 14.5 GHz
Features
High Linear Gain: 22 dB Typical
High Saturated Output Power: +33 dBm Typical
High Power Added Efficiency: 22% Typical
High P1dB: 32 dBm Typ.
50 Ω Input/Output Broadband Matched
Integrated Output Power Detector
Lead-Free Ceramic Bolt Down Package
RoHS* Compliant and 260°C Reflow Compatible
Description
The AM42-0007 is a three-stage MMIC
linear power amplifier in a lead-free, ceramic bolt
down style hermetic package. The AM42-0007
employs a fully matched chip with internally
decoupled gate and drain bias networks and an
output power detector. The AM42-0007 is designed
to be operated from a constant voltage drain supply.
The AM42-0007 is designed for use as an output
stage or a driver, in applications for VSAT systems.
This design is fully monolithic and requires a
minimum of external components.
The AM42-0007 is fabricated using a mature 0.5
micron GaAs MESFET process. The process
features full passivation for increased performance
and reliability. This product is 100% RF tested to
ensure compliance to performance specifications.
Ordering Information
Part Number
AM42-0007
Package
Ceramic Bolt Down
Functional Schematic
Rev. V8
VDGD1N,2D
GGNNDD
RFRIFNIN
VGVGGG
GNGDND
GVNDDD1,2
GVNDDD3
RRFFOUOT UT
VVDEDTET
VGDDND
Pin Configuration
Pin No.
1
2
3
4
5
6
7
8
9
10
Pin Name
GND
GND
RFIN
VGG
GND
VDD
VDET
RFOUT
GND
GND
Description
DC and RF Ground
DC and RF Ground
RF Input
Gate Supply
DC and RF Ground
Voltage Drain Supply
Output Power Detector
RF Output
DC and RF Ground
DC and RF Ground
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




 AM42-0007
AM42-0007
GaAs MMIC VSAT Power Amplifier, 2.0 W
14.0 - 14.5 GHz
Electrical Specifications: TA = +25°C, VDD = +9 V, VGG =- 5.0 V, Z0 = 50 Ω
Parameter
Linear Gain
Input VSWR
Output VSWR
Saturated Output Power
Output Power at P1dB
Output IP3
Power Added Efficiency
Bias Current
Thermal Resistance
Detector Output Voltage
Test Conditions
PIN < 0 dBm
PIN < 0 dBm
PIN < 0 dBm
PIN = +14 dBm
Two +24 dB, output tones @ 1 MHz spacing
PIN = +14 dBm
IDD (No RF)
IGG (No RF)
25°C Heat Sink
RL = 10 K Ω, POUT = +31dBm
Units
dB
Ratio
Ratio
dBm
dBm
dBm
%
mA
mA
°C/W
V
Min.
19
31
Typ.
22
2.5:1
2.7:1
33
32
41
22
850
18
9.5
+3.5
Rev. V8
Max.
2.7:1
25
Absolute Maximum Ratings 1,2,3
Parameter
Absolute Maximum
VDD
VGG
Power Dissipation
12 Volts
-10 Volts
13.2 W
RF Input Power
+23 dBm
Channel Temperature
150°C
Storage Temperature
-65°C to +150°C
IDS 2100 mA
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. M/A-COM Technology does not recommend sustained
operation near these survivability limits.
3. Case Temperature (TC) = +25°C.
Typical Bias Configuration4,5,6,7,8
VDET
7
VDD
6
10 K Ω
3.3 µF
RF In
3
0.01 µF
AM42-0007
RF Out
8
0.01 µF
GND
1,2,5,9,10
VGG
4
4. Nominal bias is obtained by first connecting 5 volts to pin 4
(VGG), followed by connection +9 volts to pin 6 (VDD). Note
sequence.
5. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
6. No DC bias voltage appears at the RF ports.
7. For optimum IP3 performance, the VDD bypass capacitors
should be placed within 0.5 inches of pin 6.
8. Resistor and capacitors surrounding the amplifier are
suggestions and not included as part of the AM42-0007.
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support




 AM42-0007
AM42-0007
GaAs MMIC VSAT Power Amplifier, 2.0 W
14.0 - 14.5 GHz
Typical Performance Curves @ +25°C
Linear Gain vs. Frequency
25
Rev. V8
Input and Output Return Loss vs. Frequency
25
15 15
55
-5
-15
10
12 14 16
Frequency (GHz)
18
Output Power vs. Input Power @ 14.25 GHz
35 50
Output Power (dBm)
33
40
31 30
29 20
PAE (%)
27 10
25 0
0 4 8 12 16
Input Power (dBm)
Output Power vs. Frequency @ PIN = +14 dBm
35
-5 S11
S22
-15
10
12 14 16
Frequency (GHz)
18
Detector Voltage vs. Output Power @ 14.25 GHz
6
5
4
3
2
1
0
19 21 23 25 27 29 31 33
Output Power (dBm)
PAE vs. Frequency @ PIN = +14 dBm
50
33 40
31 30
29 20
27 10
25
12
13 14 15
Frequency (GHz)
16
0
12 13 14 15 16
Frequency (GHz)
3
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support



Recommended third-party AM42-0007 Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)