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Power Amplifier. AM42-0040 Datasheet

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Power Amplifier. AM42-0040 Datasheet






AM42-0040 Amplifier. Datasheet pdf. Equivalent




AM42-0040 Amplifier. Datasheet pdf. Equivalent





Part

AM42-0040

Description

GaAs MMIC VSAT Power Amplifier



Feature


AM42-0040 GaAs MMIC VSAT Power Amplifier 2.0 W 5.9 - 6.4 GHz Features • High Linear Gain: 30 dB Typical • High Sat urated Output Power: +33 dBm Typ. • H igh Power Added Efficiency: 26% Typ. 50 Ω Input/Output Broadband Matched • Lead-Free Ceramic Bolt Down Packag e • RoHS* Compliant and 260°C Reflow Compatible Description The AM42-0040 i s a three-stage MMIC power amplif.
Manufacture

MA-COM

Datasheet
Download AM42-0040 Datasheet


MA-COM AM42-0040

AM42-0040; ier in a lead-free, ceramic bolt down st yle hermetic package. The AM42-0040 emp loys an internally matched monolithic c hip with internally decoupled Gate and Drain bias networks. The AM42-0040 is d esigned to be operated from a constant current Drain supply. By varying the Ga te bias voltage, the saturated output p ower performance of this device can be tailored for vario.


MA-COM AM42-0040

us applications. The AM42-0040 is design ed for use as an output stage or driver amplifier for C-band VSAT transmitter systems. This amplifier employs a fully monolithic chip and requires a minimum of external components. The AM42-0040 is fabricated using a mature 0.5 micron GaAs MESFET process. The process featu res full passivation for increased perf ormance and reliab.


MA-COM AM42-0040

ility. This product is 100% RF tested to ensure compliance to performance speci fications. Ordering Information Part N umber AM42-0040 Package Ceramic Bolt D own Functional Schematic Rev. V5 N/C GND RFIN GND VGG VDD GND RFOUT VDET N /C Pin Configuration Pin No. 1 2 3 4 5 6 7 8 9 10 Pin Name N/C GND RF In GN D VGG N/C VDET RF Out GND VDD Descript ion No Connection .

Part

AM42-0040

Description

GaAs MMIC VSAT Power Amplifier



Feature


AM42-0040 GaAs MMIC VSAT Power Amplifier 2.0 W 5.9 - 6.4 GHz Features • High Linear Gain: 30 dB Typical • High Sat urated Output Power: +33 dBm Typ. • H igh Power Added Efficiency: 26% Typ. 50 Ω Input/Output Broadband Matched • Lead-Free Ceramic Bolt Down Packag e • RoHS* Compliant and 260°C Reflow Compatible Description The AM42-0040 i s a three-stage MMIC power amplif.
Manufacture

MA-COM

Datasheet
Download AM42-0040 Datasheet




 AM42-0040
AM42-0040
GaAs MMIC VSAT Power Amplifier 2.0 W
5.9 - 6.4 GHz
Features
High Linear Gain: 30 dB Typical
High Saturated Output Power: +33 dBm Typ.
High Power Added Efficiency: 26% Typ.
50 Input/Output Broadband Matched
Lead-Free Ceramic Bolt Down Package
RoHS* Compliant and 260°C Reflow Compatible
Description
The AM42-0040 is a three-stage MMIC power
amplifier in a lead-free, ceramic bolt down style
hermetic package. The AM42-0040 employs an
internally matched monolithic chip with internally
decoupled Gate and Drain bias networks. The
AM42-0040 is designed to be operated from a
constant current Drain supply. By varying the Gate
bias voltage, the saturated output power
performance of this device can be tailored for
various applications.
The AM42-0040 is designed for use as an output
stage or driver amplifier for C-band VSAT transmitter
systems. This amplifier employs a fully monolithic
chip and requires a minimum of external
components.
The AM42-0040 is fabricated using a mature 0.5
micron GaAs MESFET process. The process
features full passivation for increased performance
and reliability. This product is 100% RF tested to
ensure compliance to performance specifications.
Ordering Information
Part Number
AM42-0040
Package
Ceramic Bolt Down
Functional Schematic
Rev. V5
N/C
GND
RFIN
GND
VGG
VDD
GND
RFOUT
VDET
N/C
Pin Configuration
Pin No.
1
2
3
4
5
6
7
8
9
10
Pin Name
N/C
GND
RF In
GND
VGG
N/C
VDET
RF Out
GND
VDD
Description
No Connection
DC and RF Ground
RF Input
DC and RF Ground
Gate Supply
No Connection
Detector
RF Output
DC and RF Ground
Drain Supply
* Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.




 AM42-0040
AM42-0040
GaAs MMIC VSAT Power Amplifier 2.0 W
5.9 - 6.4 GHz
Electrical Specifications: TA = 25°C, VDD = +9 V, VGG adjusted for IDD = 1050 mA
Parameter
Linear Gain
Input VSWR
Output VSWR
Output Power
Output Power vs. Frequency
Output Power vs. Temperature
(with respect to TA = 25°C)
Drain Bias Current
Gate Bias Voltage
Gate Bias Current
Thermal Resistance
Test Conditions
PIN < -10 dBm
PIN < -10 dBm
PIN < -10 dBm
PIN = +10 dBm, IDD = 1050 mA Typ.
PIN = +10 dBm, IDD = 1050 mA Typ.
PIN = +10 dBm, IDD = 1050 mA Typ.
TA = -40°C to +70°C
PIN = +10 dBm
PIN = +10 dBm, IDD = 1050 mA Typ.
PIN = +10 dBm, IDD = 1050 mA Typ.
25°C Heat Sink
Units
dB
Ratio
Ratio
dBm
dB
dB
mA
V
mA
°C/W
Min.
27
31.7
900
-2.4
Typ.
30
2.3:1
3.0:1
33.0
1.0
±0.4
1050
-1.2
5
5.6
Second Harmonic
Third Harmonic
VDET
PIN = +10 dBm, IDD = 1050 mA Typ.
PIN = +10 dBm, IDD = 1050 mA Typ.
dBc —
dBc —
V2
-35
-45
Rev. V5
Max.
2.7:1
34.5
1.5
1100
-0.4
20
Absolute Maximum Ratings 1,2,3
Typical Bias Configuration4,5,6,7,8
Parameter
Absolute Maximum
Input Power
+23 dBm
VDD
VGG
VDD - VGG
IDD
Channel Temperature
+12 Volts
-3 Volts
+12 Volts
1700 mA
-40°C to +85°C
Storage Temperature
-65°C to +150°C
1. Exceeding any one or combination of these limits may cause
permanent damage to this device.
2. M/A-COM Technology does not recommend sustained
operation near these survivability limits.
3. Case Temperature (TC) = +25°C.
4. Nominal bias is obtained by first connecting -2.4 volts to pin 5
(VGG), followed by connection +9 volts to pin 10 (VDD).
Note sequence. Adjust VGG for a drain current of 1050 mA
typical.
5. RF ground and thermal interface is the flange (case bottom).
Adequate heat sinking is required.
6. No DC bias voltage appears at the RF ports.
7. For optimum IP3 performance, the VDD bypass capacitors
should be placed within 0.5 inches of the VDD leads.
8. Resistor and capacitors surrounding the amplifier are
suggestions and not included as part of the AM42-0040.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.




 AM42-0040
AM42-0040
GaAs MMIC VSAT Power Amplifier 2.0 W
5.9 - 6.4 GHz
Typical Performance Curves @ +25°C
Linear Gain vs. Frequency
40
30
20
10
0
-10
-20
-30
-40
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
Frequency (GHz)
Output Power vs. Frequency @ PIN = +10 dBm
35
30
25
20
15
10
5
0
4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0
Frequency (GHz)
Output Power vs. Input Power @ 6.15 GHz
35
34
33
32
31
30
0 2 4 6 8 10 12 14
PIN (dBm)
Rev. V5
Input and Output Return Loss vs. Frequency
0
-5
-10
-15
-20
-25 S11
-30 S22
-35
3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0
Frequency (GHz)
PAE vs. Frequency @ PIN = +10 dBm
30
25
20
15
10
5
0
4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0
Frequency (GHz)
PAE vs. Input Power @ 6.15 GHz
25
20
15
10
5
0
0 2 4 6 8 10 12 14
PIN (dBm)
3
ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY: Data Sheets contain information regarding a product M/A-COM Technology
India Tel: +91.80.43537383
China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
Commitment to produce in volume is not guaranteed.
changes to the product(s) or information contained herein without notice.






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