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VOLTAGE SUPPRESSOR. HSMBJSAC7.0 Datasheet

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VOLTAGE SUPPRESSOR. HSMBJSAC7.0 Datasheet






HSMBJSAC7.0 SUPPRESSOR. Datasheet pdf. Equivalent




HSMBJSAC7.0 SUPPRESSOR. Datasheet pdf. Equivalent





Part

HSMBJSAC7.0

Description

500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR

Manufacture

Microsemi

Datasheet
Download HSMBJSAC7.0 Datasheet


Microsemi HSMBJSAC7.0

HSMBJSAC7.0; WWW.Microsemi .COM SCOTTSDALE DIVISION HSMBJSAC5.0 thru HSMBJSAC50 500 WATT L OW CAPACITANCE TRANSIENT VOLTAGE SUPPRE SSOR DESCRIPTION The HSMBJSAC transien t voltage suppressor (TVS) series rated at 500 Watts provides an added rectifi er element as shown in Figure 4 to achi eve low capacitance in applications for data or signal lines. The low capacita nce rating of less.


Microsemi HSMBJSAC7.0

than 30 pF may be used for protecting h igher frequency applications in inducti ve switching environments or electrical systems involving secondary lightning effects per IEC61000-4-5 as well as RTC A/DO-160D or ARINC 429 for airborne avi onics. If bidirectional protection is n eeded, two HSMBJSAC devices in anti-par allel configuration are required as sho wn in Figure 6. Wi.


Microsemi HSMBJSAC7.0

th their very fast response time, they a lso provide ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4 respectiv ely. IMPORTANT: For the most current da ta, consult MICROSEMI’s website: http ://www.microsemi.com APPEARANCE DO-214 AA See package notes FEATURES • Unid irectional low-capacitance TVS series ( for bidirectional see Figure 6) • Sup presses transient up to .



Part

HSMBJSAC7.0

Description

500 WATT LOW CAPACITANCE TRANSIENT VOLTAGE SUPPRESSOR

Manufacture

Microsemi

Datasheet
Download HSMBJSAC7.0 Datasheet




 HSMBJSAC7.0
SCOTTSDALE DIVISION
HSMBJSAC5.0 thru HSMBJSAC50
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
DESCRIPTION
The HSMBJSAC transient voltage suppressor (TVS) series rated at 500
Watts provides an added rectifier element as shown in Figure 4 to achieve
low capacitance in applications for data or signal lines. The low capacitance
rating of less than 30 pF may be used for protecting higher frequency
applications in inductive switching environments or electrical systems
involving secondary lightning effects per IEC61000-4-5 as well as
RTCA/DO-160D or ARINC 429 for airborne avionics. If bidirectional
protection is needed, two HSMBJSAC devices in anti-parallel configuration
are required as shown in Figure 6. With their very fast response time, they
also provide ESD and EFT protection per IEC61000-4-2 and IEC61000-4-4
respectively.
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
APPEARANCE
DO-214AA
See package notes
FEATURES
Unidirectional low-capacitance TVS series (for
bidirectional see Figure 6)
Suppresses transient up to 500 Watts Peak Pulse
Power @ 10/1000 µs
Improved performance in low capacitance of 30 pF
Economical small plastic surface mount with robust
axial subassembly package
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, JANTXV, and JANS are
also available by adding MQ, MX, MV, or MSP
prefixes respectively to part number, e.g.
MXSAC5.0, MVSAC18, etc.
Also available in surface mount with SMAJ prefix
for part numbers (ex. SMAJSAC5.0)
UL94V-0 Flammability Classification
APPLICATIONS / BENEFITS
Low Capacitance for data-line protection to 70 MHz
Protection for aircraft fast data rate lines per select
level waveforms in RTCA/DO-160D & ARINC 429
ESD and EFT protection per IEC61000-4-2 and
IEC61000-4-4 respectively
Secondary lightning protection per IEC61000-4-5 with
42 Ohms source impedance:
Class 1: HSMBJSAC5.0 to HSMBJSAC50
Class 2: HSMBJSAC5.0 to HSMBJSAC45
Class 3: HSMBJSAC5.0 to HSMBJSAC22
Class 4: HSMBJSAC5.0 to HSMBJSAC10
Secondary lightning protection per IEC61000-4-5 with
12 Ohms source impedance
Class 1: HSMBJSAC5.0 to HSMBJSAC26
Class 2: HSMBJSAC5.0 to HSMBJSAC15
Class 3: HSMBJSAC5.0 to HSMBJSAC7.0
MAXIMUM RATINGS
Peak Pulse Power Dissipation at 25oC: 500 Watts @
10/1000 µs with repetition rate of 0.01% or less*
Steady State Power Dissipation* at TL = +75oC: 2.5
Watts.
Clamping Speed (0 volts to V(BR) Min.) less than 5
nanoseconds.
Operating and Storage Temperature: -65oC to +150oC.
MECHANICAL AND PACKAGING
CASE: Void Free Transfer Molded Thermosetting Plastic
(see DO-214AA dimensions and notes)
FINISH: All External Surfaces Are Corrosion Resistant and
Leads Solderable
POLARITY: Cathode (TVS) Marked with Band
MARKING: Part number without HSMBJ prefix (ie. SAC5.0)
WEIGHT: 0.1 Grams (Approx.)
* TVS devices are not typically used for dc power dissipation and are instead operated < VWM (rated standoff voltage) except for transients
that briefly drive the device into avalanche breakdown (VBR to VC region) of the TVS element. Also see Figures 5 and 6 for further
protection details in rated peak pulse power for unidirectional and bidirectional configurations respectively.
Copyright 2002
11-24-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1





 HSMBJSAC7.0
SCOTTSDALE DIVISION
HSMBJSAC5.0 thru HSMBJSAC50
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
ELECTRICAL CHARACTERISTICS @ 25oC
REVERSE BREAKDOWN MAXIMUM MAXIMUM MAXIMUM CAPACITANCE WORKING INVERSE
PEAK
MICROSEMI STAND-OFF VOLTAGE
STANDBY CLAMPING PEAK PULSE
@ O Volts
INVERSE BLOCKING INVERSE
PART NUMBER
VOLTAGE
(Note 1)
VWM
@ I(BR) 1.0mA
V(BR)
Volts
CURRENT
@VWM
ID
VOLTAGE
IP = 5.0A*
VC
CURRENT*
RATING
IPP
BLOCKING
VOLTAGE
VWIB
LEAKAGE
CURRENT
@ VWIB
BLOCKING
VOLTAGE
VPIB
Volts
Min.
µA Volts
Amps
pF
Volts
IIB mA
Volts
HSMBJSAC5.0
5.0
7.60
300 10.0
44
30 75 1 100
HSMBJSAC6.0
6.0
7.90
300 11.2
41
30 75 1 100
HSMBJSAC7.0
7.0
8.33
300 12.6
38
30 75 1 100
HSMBJSAC8.0
8.0
8.89
100 13.4
36
30 75 1 100
HSMBJSAC8.5
8.5
9.44
50 14.0
34
30 75 1 100
HSMBJSAC10
10
11.10
5.0 16.3
29
30 75 1 100
HSMBJSAC12
12
13.30
5.0 19.0
25
30 75 1 100
HSMBJSAC15
15
16.70
5.0 23.6
20
30 75 1 100
HSMBJSAC18
18
20.00
5.0 28.8
15
30 75 1 100
HSMBJSAC22
22
24.40
5.0 35.4
14
30 75 1 100
HSMBJSAC26
26
28.90
5.0 42.3
11.1
30
75 1 100
HSMBJSAC36
36
40.0
5.0 60.0
8.6
30 75 1 100
HSMBJSAC45
45
50.00
5.0 77.0
6.8
30 150 1 200
HSMBJSAC50
50
55.50
5.0 88.0
5.8
30 150 1 200
*See Figure 3
Clamping Factor: The ratio of the numerical value of VC to V(BR) is typically 1.4 @ full rated power, 1.20 @ 50% rated power. Also see MicroNote 108.
Note 1: A transient voltage suppressor is normally selected according to voltage (VWM), that should be equal to or greater than the dc or continuous
peak operating voltage level.
Note 2: When pulse testing, test in TVS avalanche direction. Do not pulse in “forward” direction. See section for “Schematic Applications” herein.
.
GRAPHS
tw – Pulse Width µs
FIGURE 1
Copyright 2002
11-24-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 2





 HSMBJSAC7.0
SCOTTSDALE DIVISION
HSMBJSAC5.0 thru HSMBJSAC50
500 WATT LOW CAPACITANCE
TRANSIENT VOLTAGE SUPPRESSOR
Peak Power
(Single Pulse)
Average
Power
TL – Lead Temperature – oC
FIGURE 2
Lead Length = 3/8
t – Time – msec
FIGURE 3
SCHEMATIC APPLICATIONS
The TVS low capacitance device configuration is shown in Figure 4. As a further option for unidirectional applications, an additional low
capacitance rectifier diode may be used in parallel in the same polarity direction as the TVS as shown in in Figure 5. In applications where
random high voltage transients occur, this will prevent reverse transients from damaging the internal low capacitance rectifier diode and also
provide a low voltage conducting direction. The added rectifier diode should be of similar low capacitance and also have a higher reverse voltage
rating than the TVS clamping voltage VC. Consult factory for recommended rectifier part number. If using two (2) low capacitance TVS devices
in anti-parallel for bidirectional applications, this added protective feature for both directions (including the reverse of each rectifier diode) is also
provided. The unidirectional and bidirectional configurations in Figure 5 and 6 will both result in twice the capacitance of Figure 4.
PACKAGE
DIMENSIONS
FIGURE 4
TVS with internal Low
Capacitance Diode
FIGURE 5
Optional Unidirectional
configuration (TVS and
separate rectifier diode)
in parallel)
FIGURE 6 Optional Bidirectional
configuration (two TVS devices in
anti-parallel)
DIMENSIONS
INCHES
DIM MIN
MAX
MILLIMETERS
MIN MAX
A .073 .087 1.85 2.21
B .160 .180 4.06 4.57
C .130 .155 3.30 3.94
D .205 .220 5.21 5.59
E .075 .130 1.91 3.30
F .030 .060 .76 1.52
G .006
.016
.15
.41
NOTE: Dimension E exceeds the
JEDEC outline in height as shown
Copyright 2002
11-24-2003 REV A
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 3



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