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Protection Diode. RSB33V Datasheet

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Protection Diode. RSB33V Datasheet






RSB33V Diode. Datasheet pdf. Equivalent




RSB33V Diode. Datasheet pdf. Equivalent





Part

RSB33V

Description

Bi direction ESD Protection Diode



Feature


Data Sheet Bi direction ESD Protection Diode RSB33V Applications ESD Prote ction Dimensions (Unit : mm) 1.25 0.1 0.1±0.1     0.05 Land size figure (Unit : mm) 0.9MIN. 1.7±0 .1 2.5±0.2 0.8MIN. 2.1 Features 1) Small mold type. (UMD2) 2)High reliabil ity. 3)Bi-directionality. Constructi ons Silicon epitaxial planer 0.3±0.05 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC.
Manufacture

Rohm

Datasheet
Download RSB33V Datasheet


Rohm RSB33V

RSB33V; -901A dot (year week factory) 0.7±0.2     0.1 UMD2 Structure Ta ping dimensions (Unit : mm) 4.0±0.1 2 .0±0.05 φ1.55±0.05 0.3±0.1 3.5± 0.05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 1.40±0.1 4.0±0.1 φ1.05 1.0±0.1 Absolute maximum ratings (Ta=25°C) Parameter Symbol Power dissipation Pd Junction temperature Tj Storage t emperature Tstg Limits 200 150 −55 to +150 .


Rohm RSB33V

Unit mW °C °C Electrical characte ristics (Ta=25°C) Parameter Symbol M in. Typ. Max. Zener voltage Reverse cu rrent Junction capacitance VZ 29.7 IR Ct - - 36.3 - 0.1 - 30 *Zener voltage (Vz)shall be measured at 40ms after lo ading current. Unit Conditions V IZ=1m A μA VR=25V pF VR=0V , f=1MHz www.roh m.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 .


Rohm RSB33V

- Rev.A RSB33V   Data Sheet ZENER C URRENT:Iz(mA) 10 apply voltage 1 Ta=2 5°C Ta=150°C 0.1 Ta=−25°C Ta=12 5°C Ta=75°C 0.01 25 30 35 40 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERISTICS(1 ) 45 1000 100 apply voltage Ta=150 C 10 1 Ta=125°C 0.1 0.01 0.001 0 Ta=75°C Ta=25°C 5 10 15 20 25 REVERS E VOLTAGE:VR(V) VR-IR CHARACTERISTICS (1) 30 100 apply voltage f=1MHz .

Part

RSB33V

Description

Bi direction ESD Protection Diode



Feature


Data Sheet Bi direction ESD Protection Diode RSB33V Applications ESD Prote ction Dimensions (Unit : mm) 1.25 0.1 0.1±0.1     0.05 Land size figure (Unit : mm) 0.9MIN. 1.7±0 .1 2.5±0.2 0.8MIN. 2.1 Features 1) Small mold type. (UMD2) 2)High reliabil ity. 3)Bi-directionality. Constructi ons Silicon epitaxial planer 0.3±0.05 ROHM : UMD2 JEDEC : SOD-323 JEITA : SC.
Manufacture

Rohm

Datasheet
Download RSB33V Datasheet




 RSB33V
Data Sheet
Bi direction ESD Protection Diode
RSB33V
Applications
ESD Protection
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1
    0.05
Land size figure (Unit : mm)
0.9MIN.
Features
1)Small mold type. (UMD2)
2)High reliability.
3)Bi-directionality.
Constructions
Silicon epitaxial planer
0.3±0.05
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-901A
dot (year week factory)
0.7±0.2
    0.1
UMD2
Structure
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.3±0.1
1.40±0.1
4.0±0.1
φ1.05
1.0±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
Limits
200
150
55 to +150
Unit
mW
°C
°C
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Zener voltage
Reverse current
Junction capacitance
VZ 29.7
IR -
Ct -
- 36.3
- 0.1
- 30
*Zener voltage (Vz)shall be measured at 40ms after loading current.
Unit Conditions
V IZ=1mA
μA VR=25V
pF VR=0V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A




 RSB33V
RSB33V
  Data Sheet
10
apply voltage
1
Ta=25°C
Ta=150°C
0.1 Ta=25°C
Ta=125°C
Ta=75°C
0.01
25
30 35 40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS()
45
1000
100
apply voltage
Ta=150°C
10
1 Ta=125°C
0.1
0.01
0.001
0
Ta=75°C
Ta=25°C
5 10 15 20 25
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS(1)
30
100
apply voltage
f=1MHz
10
apply voltage
1
Ta=25°C
0.1
Ta=25°C
Ta=150°C
Ta=125°C
Ta=75°C
0.01
25
30 35 40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(2)
45
1000
100
Ta=150°C
10 Ta=125°C
1
0.1
0.01
Ta=75°C
Ta=25°C
apply voltage
0.001
0
5 10 15 20
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS(2)
25
30
100
apply voltage
f=1MHz
10 10
1
0 5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(1)
1
0 5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(2)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A




 RSB33V
RSB33V
  Data Sheet
40
38
36
34
32
30
28 AVE:32.73V
26
apply voltage
24
22
20
Ta=25°C
IZ=1mA
n=30pcs
AVE:34.52V
apply voltage
Vz DISPERSION MAP
10
9
8
7
6
5
4 AVE9.07pF
3
apply voltage
2
1
0
Ta=25°C
f=1MHz
VR=0V
n=20pcs
AVE8.86pF
apply voltage
Ct DISPERSION MAP
1000
100
10
apply voltage
1
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(2)
10
10
9
8
7
apply voltage
6
5
4
3
2 AVE:0.39nA
1
0
Ta=25°C
VR=25V
n=30pcs
apply voltage
AVE:1.38nA
IR DISPERSION MAP
10000
1000
100
apply voltage
10
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(1)
10
1000
On glass-epoxy substrate
Rth(j-a)
100
Rth(j-c)
10
1
0.001
0.01
0.1 1 10
TIME(s)
Rth-t CHARACTERISTICS
100
1000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.11 - Rev.A



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