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Protection Diode. RSB33F2 Datasheet

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Protection Diode. RSB33F2 Datasheet






RSB33F2 Diode. Datasheet pdf. Equivalent




RSB33F2 Diode. Datasheet pdf. Equivalent





Part

RSB33F2

Description

Bi direction ESD Protection Diode



Feature


Data Sheet Bi direction ESD Protection Diode RSB33F2 Applications ESD Prot ection Features 1)Small mold type. ( UMD3) 2)High reliability. 3)Bi-directio nality. Constructions Silicon epitax ial planer Dimensions (Unit : mm) 2.0±0.2 0.3±0.1 リードとも Each lead has same dimension (3) 0.15±0.05 Land size figure (Unit : mm) 1.3 0 .65 1.25±0.1 2.1±0.1 0.1Min 0.9MIN. 1.6 .
Manufacture

Rohm

Datasheet
Download RSB33F2 Datasheet


Rohm RSB33F2

RSB33F2; (2) (0.65) (0.65) 1.3±0.1 (1) 0~0.1 0.7±0.1 0.9±0.1 0.8MIN. UM D3 Structure ROHM : UMD3 JEDEC : SO T-323 JEITA : SC-70 dot(year week facto ry) Taping dimensions (Unit : mm) 4.0±0.1 2.0±0.05 φ1.55±0.05 0.3 0.1 1.75±0.1 8.0±0.2 3.5±0.05 2 .4±0.1 2.4±0.1 5.5±0.2 0~0.1 2 .25±0.1      0 4.0±0.1 φ0. 5±0.05 1.25±0.1 Absolute maximum ratings (Ta=25°C) Para.


Rohm RSB33F2

meter Symbol Power dissipation(*) Pd Junction temperature Tj Storage temp erature Tstg (*)Total two elements L imits 200 150 −55 to +150 Electri cal characteristics (Ta=25°C) Paramet er Symbol Min. Typ. Max. Zener voltag e Reverse current Junction capacitance VZ 29.7 IR Ct - - 36.3 - 0.1 - 30 *Z ener voltage (Vz) shall be measured at 40ms after loading curr.


Rohm RSB33F2

ent. Unit mW °C °C Unit Conditions V IZ=1mA μA VR=25V pF VR=0V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RSB33F2   Data Sheet ZENER CURRENT :Iz(mA) 10 apply voltage 1 Ta=25°C 0 .1 Ta=−25°C Ta=150°C Ta=125°C 0. 01 25 Ta=75°C 30 35 40 ZENER VOLTAGE: Vz(V) Vz-Iz CHARACTERISTICS(1) 45 100 0 100 apply voltage 10 Ta=150°.

Part

RSB33F2

Description

Bi direction ESD Protection Diode



Feature


Data Sheet Bi direction ESD Protection Diode RSB33F2 Applications ESD Prot ection Features 1)Small mold type. ( UMD3) 2)High reliability. 3)Bi-directio nality. Constructions Silicon epitax ial planer Dimensions (Unit : mm) 2.0±0.2 0.3±0.1 リードとも Each lead has same dimension (3) 0.15±0.05 Land size figure (Unit : mm) 1.3 0 .65 1.25±0.1 2.1±0.1 0.1Min 0.9MIN. 1.6 .
Manufacture

Rohm

Datasheet
Download RSB33F2 Datasheet




 RSB33F2
Data Sheet
Bi direction ESD Protection Diode
RSB33F2
Applications
ESD Protection
Features
1)Small mold type. (UMD3)
2)High reliability.
3)Bi-directionality.
Constructions
Silicon epitaxial planer
Dimensions (Unit : mm)
2.0±0.2
0.3±0.1
各リードとも
Each lead has same dimension
(3)
0.15±0.05
Land size figure (Unit : mm)
1.3
0.65
(2)
(0.65) (0.65)
1.3±0.1
(1)
0~0.1
0.7±0.1
0.9±0.1
0.8MIN.
UMD3
Structure
ROHM : UMD3
JEDEC : SOT-323
JEITA : SC-70
dot(year week factory)
Taping dimensions (Unit : mm)
4.0±0.1
2.0±0.05
φ1.55±0.05
0.3±0.1
2.25±0.1
     0
4.0±0.1
φ0.5±0.05
1.25±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation(*)
Pd
Junction temperature
Tj
Storage temperature
Tstg
(*)Total two elements
Limits
200
150
55 to +150
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Zener voltage
Reverse current
Junction capacitance
VZ 29.7
IR -
Ct -
- 36.3
- 0.1
- 30
*Zener voltage (Vz) shall be measured at 40ms after loading current.
Unit
mW
°C
°C
Unit Conditions
V IZ=1mA
μVR=25V
pF VR=0V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A




 RSB33F2
RSB33F2   Data Sheet
10
apply voltage
1
Ta=25°C
0.1 Ta=25°C
Ta=150°C
Ta=125°C
0.01
25
Ta=75°C
30 35 40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(1)
45
1000
100
apply voltage
10
Ta=150°C
1 Ta=125°C
0.1
0.01
0.001
0
Ta=75°C
Ta=25°C
5 10 15 20 25
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS(1)
30
100
apply voltage
f=1MHz
10
apply voltage
1
Ta=25°C
0.1
Ta=25°C
Ta=150°C
Ta=125°C
Ta=75°C
0.01
25
30 35 40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(2)
45
1000
100
10
1
0.1
0.01
0.001
0
Ta=150°C
Ta=125°C
Ta=75°C
Ta=25°C
apply voltage
5 10 15 20 25
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS(2)
30
100
apply voltage
f=1MHz
10 10
1
0 5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(1)
1
0 5 10 15 20 25
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(2)
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A




 RSB33F2
RSB33F2   Data Sheet
40
38
36
34
32
30
AVE:32.73V
28
26
apply voltage
24
22
20
Ta=25°C
IZ=1mA
n=30pcs
AVE:34.52V
apply voltage
Vz DISPERSION MAP
10
9
8
Ta=25°C
7 f=1MHz
VR=0V
6 n=20pcs
5
4 AVE9.07pF
3
apply voltage
2
AVE8.86pF
apply voltage
1
0
Ct DISPERSION MAP
10000
1000
apply voltage
100
10
1
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(2)
10
10
9
8
7
6 apply voltage
5
4
3
AVE:0.39nA
2
1
0
Ta=25°C
VR=25V
n=30pcs
apply voltage
AVE:1.38nA
IR DISPERSION MAP
10000
1000
apply voltage
100
10
1
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(1)
10
1000
On glass-epoxy substrate
Rth(j-a)
100
Rth(j-c)
10
1
0.001
0.01
0.1 1 10 100
TIME(s)
Rth-t CHARACTERISTICS
1000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.11 - Rev.A



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