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Protection Diode. RSB36V Datasheet

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Protection Diode. RSB36V Datasheet






RSB36V Diode. Datasheet pdf. Equivalent




RSB36V Diode. Datasheet pdf. Equivalent





Part

RSB36V

Description

Bi direction ESD Protection Diode



Feature


Data Sheet Bi direction ESD Protection Diode RSB36V Applications ESD Prote ction Dimensions (Unit : mm) 1.25 0.1 0.1±0.1     0.05 Land size figure (Unit : mm) 0.9MIN. 1.7±0 .1 2.5±0.2 0.8MIN. 2.1 Features 1) Small mold type. (UMD2) 2)High reliabil ity. 3)Bi-directionality. UMD2 Con structions Silicon epitaxial planer 0. 3±0.05 0.7±0.2     0.1 ROHM : UMD2 .
Manufacture

Rohm

Datasheet
Download RSB36V Datasheet


Rohm RSB36V

RSB36V; JEDEC : SOD-323 JEITA : SC-901A dot (ye ar week factory) Structure Tapi ng dimensions (Unit : mm) 4.0±0.1 2.0 ±0.05 φ1.55±0.05 0.3±0.1 3.5±0. 05 1.75±0.1 2.75 8.0±0.2 2.8±0.1 Absolute maximum ratings (Ta=25°C) P arameter Symbol Power dissipation Pd Junction temperature Tj Storage tem perature Tstg 1.40±0.1 4.0±0.1 φ 1.05 Limits 200 150 −55 to +150 Uni.


Rohm RSB36V

t mW °C °C 1.0±0.1 Electrical ch aracteristics (Ta=25°C) Parameter Sy mbol Min. Typ. Max. Zener voltage Reve rse current Junction capacitance VZ 32 .4 IR Ct - - 39.6 - 0.1 - 30 * Zener voltage (Vz)shall be measured at 40ms a fter loading current. Unit Conditions V IZ=1mA μA VR=27V pF VR=0V , f=1MHz www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 20.


Rohm RSB36V

11.11 - Rev.A RSB36V   Data Sheet Z ENER CURRENT:Iz(mA) 10 apply voltage 1 0.1 Ta=25°C Ta=150°C Ta=125°C T a=−25°C Ta=75°C 0.01 25 30 35 40 ZENER VOLTAGE:Vz(V) Vz-Iz CHARACTERIST ICS(1) 45 1000 apply voltage 100 1 0 Ta=150°C 1 Ta=125°C 0.1 0.01 0.0 01 0 Ta=75°C Ta=25°C 5 10 15 20 RE VERSE VOLTAGE:VR(V) VR-IR CHARACTERIS TICS(1) 25 30 100 f=1MHz REVE.

Part

RSB36V

Description

Bi direction ESD Protection Diode



Feature


Data Sheet Bi direction ESD Protection Diode RSB36V Applications ESD Prote ction Dimensions (Unit : mm) 1.25 0.1 0.1±0.1     0.05 Land size figure (Unit : mm) 0.9MIN. 1.7±0 .1 2.5±0.2 0.8MIN. 2.1 Features 1) Small mold type. (UMD2) 2)High reliabil ity. 3)Bi-directionality. UMD2 Con structions Silicon epitaxial planer 0. 3±0.05 0.7±0.2     0.1 ROHM : UMD2 .
Manufacture

Rohm

Datasheet
Download RSB36V Datasheet




 RSB36V
Data Sheet
Bi direction ESD Protection Diode
RSB36V
Applications
ESD Protection
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1
    0.05
Land size figure (Unit : mm)
0.9MIN.
Features
1)Small mold type. (UMD2)
2)High reliability.
3)Bi-directionality.
UMD2
Constructions
Silicon epitaxial planer
0.3±0.05
0.7±0.2
    0.1
ROHM : UMD2
JEDEC : SOD-323
JEITA : SC-901A
dot (year week factory)
Structure
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.3±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
1.40±0.1
4.0±0.1
φ1.05
Limits
200
150
55 to +150
Unit
mW
°C
°C
1.0±0.1
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Zener voltage
Reverse current
Junction capacitance
VZ 32.4
IR -
Ct -
- 39.6
- 0.1
- 30
* Zener voltage (Vz)shall be measured at 40ms after loading current.
Unit Conditions
V IZ=1mA
μA VR=27V
pF VR=0V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/4
2011.11 - Rev.A




 RSB36V
RSB36V
  Data Sheet
10
apply voltage
1
0.1 Ta=25°C
Ta=150°C
Ta=125°C
Ta=25°C
Ta=75°C
0.01
25
30 35 40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(1)
45
1000
apply voltage
100
10
Ta=150°C
1 Ta=125°C
0.1
0.01
0.001
0
Ta=75°C
Ta=25°C
5 10 15 20
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS(1)
25
30
100
f=1MHz
10
apply voltage
1
Ta=75°C
0.1
Ta=25°C
Ta=150°C
Ta=125°C
Ta=25°C
0.01
25
30 35 40
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(2)
45
apply voltage
1000
100
10
Ta=150°C
Ta=125°C
1
0.1
0.01
Ta=75°C
Ta=25°C
0.001
0
5 10 15 20 25
REVERSE VOLTAGEVR(V)
VR-IR CHARACTERISTICS(2)
30
100
f=1MHz
10
apply voltage
1
01234
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(1)
10
apply voltage
1
0123
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS(2)
4
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A




 RSB36V
RSB36V
  Data Sheet
40
39 Ta=25°C
IZ=1mA
38 n=30pcs
37
36
35
34 AVE:35.63V
33
apply voltage
32
AVE:37.20V
apply voltage
31
30
Vz DISPERSION MAP
10
9
8
7
6
5
4 AVE8.81pF
3
apply voltage
2
1
0
Ta=25°C
f=1MHz
VR=0V
n=10pcs
AVE8.83pF
apply voltage
Ct DISPERSION MAP
10000
1000
apply voltage
100
10
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(2)
10
10
9 Ta=25°C
VR=27V
8 n=30pcs
7 apply voltage
6
5
4
AVE0.45nA
3
apply voltage
AVE:1.55nA
2
1
0
IR DISPERSION MAP
10000
1000
apply voltage
100
10
0.1
1
ZENER CURRENT(mA)
Zz-Iz CHARACTERISTICS(1)
10
1000
On glass-epoxy substrate
Rth(j-a)
100
Rth(j-c)
10
1
0.001
0.01 0.1 1 10
TIME(s)
Rth-t CHARACTERISTICS
100
1000
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
3/4
2011.11 - Rev.A



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