Bi direction ESD Protection Diode
Data Sheet
Bi direction ESD Protection Diode
RSB36V
Applications ESD Protection
Dimensions (Unit : mm)
1.25±0.1
0...
Description
Data Sheet
Bi direction ESD Protection Diode
RSB36V
Applications ESD Protection
Dimensions (Unit : mm)
1.25±0.1
0.1±0.1 0.05
Land size figure (Unit : mm) 0.9MIN.
1.7±0.1 2.5±0.2
0.8MIN. 2.1
Features 1)Small mold type. (UMD2) 2)High reliability. 3)Bi-directionality.
UMD2
Constructions Silicon epitaxial planer
0.3±0.05
0.7±0.2 0.1
ROHM : UMD2
JEDEC : SOD-323 JEITA : SC-901A
dot (year week factory)
Structure
Taping dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φ1.55±0.05
0.3±0.1
3.5±0.05 1.75±0.1 2.75
8.0±0.2 2.8±0.1
Absolute maximum ratings (Ta=25°C)
Parameter
Symbol
Power dissipation
Pd
Junction temperature
Tj
Storage temperature
Tstg
1.40±0.1
4.0±0.1
φ1.05
Limits 200 150 −55 to +150
Unit mW °C °C
1.0±0.1
Electrical characteristics (Ta=25°C)
Parameter
Symbol Min. Typ. Max.
Zener voltage Reverse current Junction capacitance
VZ 32.4 IR Ct -
- 39.6 - 0.1 - 30
* Zener voltage (Vz)shall be measured at 40ms after loading current.
Unit Conditions V IZ=1mA μA VR=27V pF VR=0V , f=1MHz
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1/4
2011.11 - Rev.A
RSB36V
Data Sheet
ZENER CURRENT:Iz(mA)
10 apply voltage
1
0.1 Ta=25°C
Ta=150°C Ta=125°C
Ta=−25°C
Ta=75°C
0.01 25
30 35 40 ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS(1)
45
1000
apply voltage
100
10
Ta=150°C
1 Ta=125°C
0.1
0.01
0.001 0
Ta=75°C
Ta=25°C
5 10 15 20
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS(1)
25
30
100 f=1MHz
REVERSE CURRENT:IR (nA)
...
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