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N-Channel MOSFET. SSF10N60 Datasheet

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N-Channel MOSFET. SSF10N60 Datasheet






SSF10N60 MOSFET. Datasheet pdf. Equivalent




SSF10N60 MOSFET. Datasheet pdf. Equivalent





Part

SSF10N60

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) 600V 0.69Ω (typ.) ID 10A Featur es and Benefits: TO-220  Advanced MOSFET process technology  Special d esigned for PWM, load switching and gen eral purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recove ry  150℃ operating temperature SS F10N60 Marking and pin Assignm.
Manufacture

SILIKRON

Datasheet
Download SSF10N60 Datasheet


SILIKRON SSF10N60

SSF10N60; ent Schematic diagram Description: It utilizes the latest processing techniqu es to achieve the high cell density and reduces the on-resistance with high re petitive avalanche rating. These featur es combine to make this design an extre mely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Ratin.


SILIKRON SSF10N60

g: Symbol ID @ TC = 25°C ID @ TC = 100 °C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Cur rent, VGS @ 10V① Continuous Drain Cur rent, VGS @ 10V① Pulsed Drain Current ② Power Dissipation③ Linear Deratin g Factor Drain-Source Voltage Gate-to-S ource Voltage Single Pulse Avalanche En ergy @ L=14.2mH Avalanche Current @ L=1 4.2mH Operating Junction and .


SILIKRON SSF10N60

Storage Temperature Range Max. 10 6 40 156 1.25 600 ± 30 641 9.5 -55 to + 150 Units A W W/°C V V mJ A °C ©Silik ron Semiconductor CO.,LTD. 2012.05.14 www.silikron.com Version : 1.0 page 1 of 8 SSF10N60 Thermal Resistance Sy mbol RθJC RθJA Characterizes Junctio n-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB moun ted, steady-state) ④ Typ. — —.

Part

SSF10N60

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) 600V 0.69Ω (typ.) ID 10A Featur es and Benefits: TO-220  Advanced MOSFET process technology  Special d esigned for PWM, load switching and gen eral purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recove ry  150℃ operating temperature SS F10N60 Marking and pin Assignm.
Manufacture

SILIKRON

Datasheet
Download SSF10N60 Datasheet




 SSF10N60
Main Product Characteristics:
VDSS
RDS(on)
600V
0.69Ω (typ.)
ID 10A
Features and Benefits:
TO-220
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSF10N60
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=14.2mH
Avalanche Current @ L=14.2mH
Operating Junction and Storage Temperature Range
Max.
10
6
40
156
1.25
600
± 30
641
9.5
-55 to + 150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2012.05.14
www.silikron.com
Version : 1.0
page 1 of 8




 SSF10N60
SSF10N60
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Junction-to-Ambient (PCB mounted, steady-state)
Typ.
Max.
0.8
62
40
Units
/W
/W
/W
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
600
2
Typ.
0.69
1.60
1.8
25.09
7.74
8.87
20.2
37.2
65.2
40.2
1257
159
1.36
Max.
0.8
4
1
50
100
-100
Units
V
Ω
V
μA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 5A
TJ = 125
VDS = VGS, ID = 250μA
TJ = 125
VDS = 600V,VGS = 0V
TJ = 125
VGS =30V
VGS = -30V
ID = 9.5A,
VDS=480V,
VGS = 10V
VGS=10V, VDS=320V,
RL=33.8Ω,RGEN=25Ω
ID=9.5A
VGS = 0V
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
10
— — 40
0.92 1.4
745
4841
Units
A
A
V
ns
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=10A, VGS=0V
TJ = 25°C, IF =9.5A,
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2012.05.14
www.silikron.com
Version : 1.0
page 2 of 8




 SSF10N60
Test circuits and Waveforms
SSF10N60
Switch Waveforms:
Notes:
The maximum current rating is limited by bond-wires.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
©Silikron Semiconductor CO.,LTD.
2012.05.14
www.silikron.com
Version : 1.0
page 3 of 8



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