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N-Channel MOSFET. SSF11NS60F Datasheet

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N-Channel MOSFET. SSF11NS60F Datasheet






SSF11NS60F MOSFET. Datasheet pdf. Equivalent




SSF11NS60F MOSFET. Datasheet pdf. Equivalent





Part

SSF11NS60F

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) ID 600V 0.36Ω (typ.) 11A Feature s and Benefits: Feathers:  High dv/d t and avalanche capabilities  100% a valanche tested  Low input capacitan ce and gate charge  Low gate input r esistance SSF11NS60F TO220F Marking and pin Assignment Schematic diagram Description: The SSF11NS60F series MOSF ETs is a new technology, wh.
Manufacture

SILIKRON

Datasheet
Download SSF11NS60F Datasheet


SILIKRON SSF11NS60F

SSF11NS60F; ich combines an innovative super junctio n technology and advance process. This new technology achieves low Rdson, ener gy saving, high reliability and uniform ity, superior power density and space s aving. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @ TC = 25°C VDS VGS EAS IAS TJ TSTG Par ameter Continuous Drain Current, VGS @ 10V① Continuous Drain.


SILIKRON SSF11NS60F

Current, VGS @ 10V① Pulsed Drain Curr ent② Power Dissipation③ Linear Dera ting Factor Drain-Source Voltage Gate-t o-Source Voltage Single Pulse Avalanche Energy @ L=22.5mH Avalanche Current @ L=22.5mH Operating Junction and Storage Temperature Range Max. 11 7 44 32.8 0 .26 600 ± 30 281 5 -55 to +150 Units A W W/°C V V mJ A °C ©Silikron Semi conductor CO.,LTD. 2013.04..


SILIKRON SSF11NS60F

15 www.silikron.com Version : 1.4 page 1 of 8 SSF11NS60F Thermal Resistance Symbol RθJC RθJA Characterizes Jun ction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Electrical Characterizes @TA=25℃ unless otherwi se specified Symbol V(BR)DSS RDS(on) V GS(th) IDSS IGSS Qg Qgs Qgd td(on) tr t d(off) tf Ciss Coss Crss Parameter Dra in-to-Source breakdown voltage S.

Part

SSF11NS60F

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) ID 600V 0.36Ω (typ.) 11A Feature s and Benefits: Feathers:  High dv/d t and avalanche capabilities  100% a valanche tested  Low input capacitan ce and gate charge  Low gate input r esistance SSF11NS60F TO220F Marking and pin Assignment Schematic diagram Description: The SSF11NS60F series MOSF ETs is a new technology, wh.
Manufacture

SILIKRON

Datasheet
Download SSF11NS60F Datasheet




 SSF11NS60F
Main Product Characteristics:
VDSS
RDS(on)
ID
600V
0.36Ω (typ.)
11A
Features and Benefits:
Feathers:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
SSF11NS60F
TO220F
Marking and pin
Assignment
Schematic diagram
Description:
The SSF11NS60F series MOSFETs is a new technology, which combines an innovative super junction
technology and advance process. This new technology achieves low Rdson, energy saving, high
reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.5mH
Avalanche Current @ L=22.5mH
Operating Junction and Storage Temperature Range
Max.
11
7
44
32.8
0.26
600
± 30
281
5
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.04.15
www.silikron.com
Version : 1.4
page 1 of 8




 SSF11NS60F
SSF11NS60F
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Typ.
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
600
2
Typ.
0.36
0.88
2.46
28.41
6.64
12.34
12.85
9.45
30.40
6.30
824.8
78.06
2.75
Max.
0.41
4
1
50
100
-100
Units
V
Ω
V
μA
nA
nC
ns
pF
Max.
3.8
80
Units
/W
/W
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 5.5A
TJ = 125
VDS = VGS, ID = 250μA
TJ = 125
VDS =600V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 11A,
VDS=480V,
VGS = 10V
VGS=10V, VDS=300V,
RL=54.5Ω,
RGEN=4.7Ω
ID=5.5A
VGS = 0V
VDS = 50V
ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
11
— — 44
— — 1.5
313
2.97
Units
A
A
V
ns
uC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=11A, VGS=0V
TJ = 25°C, IF =11A, di/dt =
100A/μs
©Silikron Semiconductor CO.,LTD.
2013.04.15
www.silikron.com
Version : 1.4
page 2 of 8




 SSF11NS60F
Test circuits and Waveforms
SSF11NS60F
Switch Waveforms:
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.04.15
www.silikron.com
Version : 1.4
page 3 of 8



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