Document
Main Product Characteristics:
VDSS
680V
RDS(on) 0.36ohm(typ.) ID 11A
Features and Benefits:
TO220F
Feathers: High dv/dt and avalanche capabilities 100% avalanche tested Low input capacitance and gate charge Low gate input resistance
SSF11NS65F
Marking and pin
Assignment
Schematic diagram
Description:
The SSF11NS65F series MOSFETs is a new technology. which combines an innovative super junction technology and advance process. this new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.5mH Avalanche Current @ L=22.5mH Operating Junction and Storage Temperature Range
Max. 11 7 44 32.8 0.26 680 ± 30 281 5
-55 to + 150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2011.07.20 www.silikron.com
Version : 1.1
page 1 of 8
SSF11NS65F
Thermal Resistance
Symbol RθJC RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 3.8 62
Units ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min. 680 — — 2 — — —
— -100 — — — — — — — — — —
Typ. — 0.36 0.88 — 2.46 — —
— — 28.41 6.64 12.34 12.85 9.45 30.40 6.30 824.8 78.06 2.75
Max. — 0.41 — 4 — 1 50 100 — — — — — — — — — — —
Units V Ω V μA nA nC
ns
pF
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 5.5A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS =650V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 11A, VDS=480V, VGS = 10V
VGS=10V, VDS=300V, RL=54.5Ω, RGEN=4.7Ω ID=5.5A
VGS = 0V VDS = 50V ƒ = 600KHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 11
— — 44
— — 1.5
— 313 — — 2.98. —
Units A
A V ns uC
Conditions MOSFET symbol showing the integral reverse p-n junction diode.
IS=11A, VGS=0V
TJ = 25°C, IF =11A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2011.07.20 www.silikron.com
Version : 1.1
page 2 of 8
Test circuits and Waveforms
SSF11NS65F
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ⑥ The maximum current rating is limited by bond-wires.
©Silikron Semiconductor CO.,LTD.
2011.07.20 www.silikron.com
Version : 1.1
page 3 of 8
SSF11NS65F
Typical electrical and thermal characteristics
Figure 1: Power dissipation
Figure 3. Typ. gate charge
Figure 2. Typ. Gate to source cut‐off voltage
Figure 4: Typ. Capacitances
©Silikron Semiconductor CO.,LTD.
2011.07.20 www.silikron.com
Version : 1.1
page 4 of 8
Typical electrical and thermal characteristics
SSF11NS65F
Figure 5. Drain‐source breakdown voltage
Figure 6. Drain‐source on‐state resistance
©Silikron Semiconductor CO.,LTD.
2011.07.20 www.silikron.com
Version : 1.1
page 5 of 8
Mechanical Data:
TO220F PACKAGE OUTLINE DIMENSION
SSF11NS65F
Symbol
A A1 A2 A3 B1 B2 B3 C C1 C2
D D1 D2
D3
E
E1 E2 E3
E4
ϴ
Dimension In Millimeters
Min 9.960
Nom
10.160 7.000
Max 10.360
3.080 9.260
3.180 9.460
3.280 9.660
15.670
15.870
16.070
4.500
4.700
4.900
6.480 3.200
6.680 3.300
6.880 3.400
15.600
15.800
16.000
9.550
9.750
9.950
2.54 (TYP)
0.700
0.800
1.470 0.900
0.250
0.350
0.450
2.340
2.540
2.740
0.700
1.0*450
0.450
0.500
0.600
2.560
2.760
2.960
300
Min 0.392 0.