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SSF11NS65F Dataheets PDF



Part Number SSF11NS65F
Manufacturers SILIKRON
Logo SILIKRON
Description N-Channel MOSFET
Datasheet SSF11NS65F DatasheetSSF11NS65F Datasheet (PDF)

                                 Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Features and Benefits: TO220F  Feathers: „ High dv/dt and avalanche capabilities „ 100% avalanche tested „ Low input capacitance and gate charge „ Low gate input resistance SSF11NS65F    Marking and pin Assignment  Schematic diagram        Description: The SSF11NS65F series MOSFETs is a new technology. which combines an innovative super junction technology and advance process. this .

  SSF11NS65F   SSF11NS65F


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                                 Main Product Characteristics: VDSS 680V RDS(on) 0.36ohm(typ.) ID 11A Features and Benefits: TO220F  Feathers: „ High dv/dt and avalanche capabilities „ 100% avalanche tested „ Low input capacitance and gate charge „ Low gate input resistance SSF11NS65F    Marking and pin Assignment  Schematic diagram        Description: The SSF11NS65F series MOSFETs is a new technology. which combines an innovative super junction technology and advance process. this new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving.   Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.5mH Avalanche Current @ L=22.5mH Operating Junction and Storage Temperature Range Max. 11 7 44 32.8 0.26 680 ± 30 281 5 -55 to + 150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2011.07.20 www.silikron.com  Version : 1.1 page 1 of 8                                  SSF11NS65F Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 3.8 62 Units ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 680 — — 2 — — — —  -100  —  —  —  —  —  —  —  —  —  —  Typ. — 0.36 0.88 — 2.46 — — —  —  28.41 6.64 12.34 12.85 9.45 30.40 6.30 824.8 78.06 2.75 Max. — 0.41 — 4 — 1 50 100 — — — — — — — — — — — Units V Ω V μA nA nC ns pF Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 5.5A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS =650V,VGS = 0V TJ = 125°C VGS =30V VGS = -30V ID = 11A, VDS=480V, VGS = 10V VGS=10V, VDS=300V, RL=54.5Ω, RGEN=4.7Ω ID=5.5A VGS = 0V VDS = 50V ƒ = 600KHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 11 — — 44 — — 1.5 — 313 — — 2.98. — Units A A V ns uC Conditions MOSFET symbol showing the integral reverse p-n junction diode.   IS=11A, VGS=0V TJ = 25°C, IF =11A, di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2011.07.20 www.silikron.com  Version : 1.1 page 2 of 8                                  Test circuits and Waveforms SSF11NS65F Switch Waveforms: Notes:  ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ⑤These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. ⑥ The maximum current rating is limited by bond-wires. ©Silikron Semiconductor CO.,LTD. 2011.07.20 www.silikron.com  Version : 1.1 page 3 of 8                                  SSF11NS65F Typical electrical and thermal characteristics                                     Figure 1: Power dissipation                                         Figure 3. Typ. gate charge        Figure 2. Typ. Gate to source cut‐off voltage   Figure 4: Typ. Capacitances  ©Silikron Semiconductor CO.,LTD. 2011.07.20 www.silikron.com  Version : 1.1 page 4 of 8                                  Typical electrical and thermal characteristics  SSF11NS65F             Figure 5. Drain‐source breakdown voltage                                            Figure 6. Drain‐source on‐state resistance  ©Silikron Semiconductor CO.,LTD. 2011.07.20 www.silikron.com  Version : 1.1 page 5 of 8                                  Mechanical Data: TO220F PACKAGE OUTLINE DIMENSION SSF11NS65F Symbol A A1 A2 A3 B1 B2 B3 C C1 C2 D D1 D2 D3 E E1 E2 E3 E4 ϴ Dimension In Millimeters Min 9.960 Nom 10.160 7.000 Max 10.360 3.080 9.260 3.180 9.460 3.280 9.660 15.670 15.870 16.070 4.500 4.700 4.900 6.480 3.200 6.680 3.300 6.880 3.400 15.600 15.800 16.000 9.550 9.750 9.950 2.54 (TYP) 0.700 0.800 1.470 0.900 0.250 0.350 0.450 2.340 2.540 2.740 0.700 1.0*450 0.450 0.500 0.600 2.560 2.760 2.960 300 Min 0.392 0.


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