SSF11NS65UD

Main Product Characteristics: VDSS RDS(on) 650V 0.33Ω (typ.) ID 11A TO-252 (DPAK) Features and Benefits:  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low gate input resistance SSF11NS65UD Marking and Pin Assignment Schematic Diagram Description: The SSF11NS65UD series MOSFETs is a new technology, which combines an innovative technology and advance process. This new technology achieves low Rdson, energy saving, high reliability and uniformity, superior power density and space saving. Absolute Max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=129.6mH Avalanche Current @ L=129.6mH Operating Junction and Storage Temperature Range Max. 11 7 44 49 0.4 650 ± 30 305 2.17 -55 to +150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.08.15 www.silikron.com Version : 1.0 page 1 of 8 SSF11NS65UD Thermal Resistance Symbol RθJC RθJA Characteristics Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 2.53 62 Units ℃/W ℃/W Electrical Characteristics @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage...