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N-Channel MOSFET. SSF5NS65UD Datasheet

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N-Channel MOSFET. SSF5NS65UD Datasheet






SSF5NS65UD MOSFET. Datasheet pdf. Equivalent




SSF5NS65UD MOSFET. Datasheet pdf. Equivalent





Part

SSF5NS65UD

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) 650V 0.74Ω (typ.) ID 5A ① Fea tures and Benefits: TO-252 (DPAK)  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low ga te input resistance SSF5NS65UD Markin g and pin Assignment Schematic diagram Description: The SSF5NS65UD series MO SFETs is a new technology, wh.
Manufacture

SILIKRON

Datasheet
Download SSF5NS65UD Datasheet


SILIKRON SSF5NS65UD

SSF5NS65UD; ich combines an innovative super junctio n technology and advance process. This new technology achieves low Rdson, ener gy saving, high reliability and uniform ity, superior power density and space s aving. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @ TC = 25°C VDS VGS EAS IAR TJ TSTG Par ameter Continuous Drain Current, VGS @ 10V Continuous Drain .


SILIKRON SSF5NS65UD

Current, VGS @ 10V Pulsed Drain Current ② Power Dissipation ③ Linear Derati ng Factor Drain-Source Voltage Gate-to- Source Voltage Single Pulse Avalanche E nergy @ L=22.4mH Avalanche Current @ L= 22.4mH Operating Junction and Storage T emperature Range Max. 5① 3.2 ① 15 50 0.4 650 ± 30 54 2.2 -55 to +150 Un its A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2013.0.


SILIKRON SSF5NS65UD

2.20 www.silikron.com Version : 1.0 pa ge 1 of 8 SSF5NS65UD Thermal Resistan ce Symbol RθJC RθJA Characterizes J unction-to-case ③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 2. 5 75 Units ℃/W ℃/W Electrical Cha racterizes @TA=25℃ unless otherwise s pecified Symbol V(BR)DSS RDS(on) VGS(t h) IDSS IGSS Qg Qgs Qgd td(on) tr td(of f) tf Ciss Coss Crss Parameter Drai.

Part

SSF5NS65UD

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) 650V 0.74Ω (typ.) ID 5A ① Fea tures and Benefits: TO-252 (DPAK)  High dv/dt and avalanche capabilities  100% avalanche tested  Low input capacitance and gate charge  Low ga te input resistance SSF5NS65UD Markin g and pin Assignment Schematic diagram Description: The SSF5NS65UD series MO SFETs is a new technology, wh.
Manufacture

SILIKRON

Datasheet
Download SSF5NS65UD Datasheet




 SSF5NS65UD
Main Product Characteristics:
VDSS
RDS(on)
650V
0.74Ω (typ.)
ID 5A
Features and Benefits:
TO-252 (DPAK)
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
SSF5NS65UD
Marking and pin
Assignment
Schematic diagram
Description:
The SSF5NS65UD series MOSFETs is a new technology, which combines an innovative super
junction technology and advance process. This new technology achieves low Rdson, energy saving,
high reliability and uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.4mH
Avalanche Current @ L=22.4mH
Operating Junction and Storage Temperature Range
Max.
5
3.2
15
50
0.4
650
± 30
54
2.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.02.20
www.silikron.com
Version : 1.0
page 1 of 8




 SSF5NS65UD
SSF5NS65UD
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
2.5
75
Units
/W
/W
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
650
2
Typ.
0.74
1.54
2.2
8.1
2.4
2.8
9.0
5.9
23
11
336
18
2.8
Max.
1.0
4
1
50
100
-100
Units
V
Ω
V
μA
nA
nC
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 650V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 4A,
VDS=100V,
VGS = 10V
VGS=10V, VDS =200V,
ns
RGEN=12.2Ω,ID =1.9A
VGS = 0V
pF VDS = 100V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
5
— — 15
0.83 1.2
105
514
Units
A
A
V
nS
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=2.8A, VGS=0V
TJ = 25°C, IF = 1.9A,
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.02.20
www.silikron.com
Version : 1.0
page 2 of 8




 SSF5NS65UD
Test circuits and Waveforms
SSF5NS65UD
Switch Waveforms:
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.02.20
www.silikron.com
Version : 1.0
page 3 of 8



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