DatasheetsPDF.com

N-Channel MOSFET. SSF5NS65UG Datasheet

DatasheetsPDF.com

N-Channel MOSFET. SSF5NS65UG Datasheet






SSF5NS65UG MOSFET. Datasheet pdf. Equivalent




SSF5NS65UG MOSFET. Datasheet pdf. Equivalent





Part

SSF5NS65UG

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) 650V 1.1Ω (typ.) ID 5A ① Feat ures and Benefits: TO-251 (IPAK)  High dv/dt and avalanche capabilities 100% avalanche tested  Low input capacitance and gate charge  Low gat e input resistance SSF5NS65UG Marking and pin Assignment Schematic diagram Description: The SSF5NS65UG series MOS FETs is a new technology, whi.
Manufacture

SILIKRON

Datasheet
Download SSF5NS65UG Datasheet


SILIKRON SSF5NS65UG

SSF5NS65UG; ch combines an innovative technology and advance process. This new technology a chieves low Rdson, energy saving, high reliability and uniformity, superior po wer density and space saving. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS V GS EAS IAS TJ TSTG Parameter Continuou s Drain Current, VGS @ 10V Continuous D rain Current, VGS @ 1.


SILIKRON SSF5NS65UG

0V Pulsed Drain Current ② Power Dissip ation ③ Linear Derating Factor Drain- Source Voltage Gate-to-Source Voltage S ingle Pulse Avalanche Energy @ L=100mH Avalanche Current @ L=100mH Operating J unction and Storage Temperature Range Max. 5① 3.1① 15 28 0.224 650 ± 30 72 1.2 -55 to +150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO. ,LTD. 2013.08.25 www.silikron.


SILIKRON SSF5NS65UG

.com Version : 1.0 page 1 of 8 SSF5NS 65UG Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 4.4 62 Units ℃/W ℃/W Electrical Characterizes @TA=25 ℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Q gs Qgd td(on) tr td(off) tf Ciss Coss C rss Parameter Drain-to-Source break.

Part

SSF5NS65UG

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) 650V 1.1Ω (typ.) ID 5A ① Feat ures and Benefits: TO-251 (IPAK)  High dv/dt and avalanche capabilities 100% avalanche tested  Low input capacitance and gate charge  Low gat e input resistance SSF5NS65UG Marking and pin Assignment Schematic diagram Description: The SSF5NS65UG series MOS FETs is a new technology, whi.
Manufacture

SILIKRON

Datasheet
Download SSF5NS65UG Datasheet




 SSF5NS65UG
Main Product Characteristics:
VDSS
RDS(on)
650V
1.1Ω (typ.)
ID 5A
Features and Benefits:
TO-251 (IPAK)
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
SSF5NS65UG
Marking and pin
Assignment
Schematic diagram
Description:
The SSF5NS65UG series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=100mH
Avalanche Current @ L=100mH
Operating Junction and Storage Temperature Range
Max.
5
3.1
15
28
0.224
650
± 30
72
1.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.08.25
www.silikron.com
Version : 1.0
page 1 of 8




 SSF5NS65UG
SSF5NS65UG
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
4.4
62
Units
/W
/W
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
650
2
Typ.
1.1
2.3
1.25
2.6
2.1
9.7
1.9
2.3
8.7
5.5
22
13
344
17
2.7
Max.
1.25
1.4
4
1
50
100
-100
Units
V
Ω
Ω
V
μA
nA
nC
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1A
TJ = 125°C
VGS=10V,ID = 2.8A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS =650V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 5A,
VDS=200V,
VGS = 10V
VGS=10V, VDS =400V,
ns
RGEN=10.2Ω,ID =1.5A
VGS = 0V
pF VDS = 100V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
5
— — 15
0.79 1.2
92
410
Units
A
A
V
nS
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=2.8A, VGS=0V
TJ = 25°C, IF = 1.5A,
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.08.25
www.silikron.com
Version : 1.0
page 2 of 8




 SSF5NS65UG
Test circuits and Waveforms
EAS Test Circuit:
SSF5NS65UG
Gate charge test circuit:
Switching Time Test Circuit:
Switching Waveforms:
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.08.25
www.silikron.com
Version : 1.0
page 3 of 8



Recommended third-party SSF5NS65UG Datasheet






@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)