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N-Channel MOSFET. SSF5NS70F Datasheet

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N-Channel MOSFET. SSF5NS70F Datasheet






SSF5NS70F MOSFET. Datasheet pdf. Equivalent




SSF5NS70F MOSFET. Datasheet pdf. Equivalent





Part

SSF5NS70F

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) 700V 1.23Ω (typ.) ID 5A ① Feat ures and Benefits: TO-251 SSF5NS70G F eathers:  High dv/dt and avalanche c apabilities  100% avalanche tested Low input capacitance and gate charg e  Low gate input resistance SSF5NS 70G/D/F TO-252 SSF5NS70D TO-220F Sch ematic diagram SSF5NS70F Description: The SSF5NS70G/D/F series MOS.
Manufacture

SILIKRON

Datasheet
Download SSF5NS70F Datasheet


SILIKRON SSF5NS70F

SSF5NS70F; FETs is a new technology, which combines an innovative technology and advance p rocess. This new technology achieves lo w Rdson, energy saving, high reliabilit y and uniformity, superior power densit y and space saving. Absolute max Ratin g: Symbol ID @ TC = 25°C ID @ TC = 10 0°C IDM PD @TC = 25°C VDS VGS EAS IAR TJ TSTG Parameter Continuous Drain Cu rrent, VGS @ 10V Cont.


SILIKRON SSF5NS70F

inuous Drain Current, VGS @ 10V Pulsed D rain Current ② Power Dissipation ③ For TO-251/TO-252 package For TO-220F package Linear Derating Factor For T O-251/TO-252 package For TO-220F packag e Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=22.4mH Avalanche Current @ L=22.4 mH Operating Junction and Storage Temp erature Range Max. 5①.


SILIKRON SSF5NS70F

3.1① 15 50 31.2 0.4 0.25 700 ± 30 54 2.2 -55 to +150 Units A W W/°C V V m J A °C ©Silikron Semiconductor CO.,L TD. 2012.11.16 www.silikron.com Versi on : 1.3 page 1 of 10 SSF5NS70G/D/F Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case ③ Jun ction-to-ambient (t ≤ 10s) ④ For T O-251/TO-252 package For TO-220F packag e For TO-251/TO-252 package For .

Part

SSF5NS70F

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) 700V 1.23Ω (typ.) ID 5A ① Feat ures and Benefits: TO-251 SSF5NS70G F eathers:  High dv/dt and avalanche c apabilities  100% avalanche tested Low input capacitance and gate charg e  Low gate input resistance SSF5NS 70G/D/F TO-252 SSF5NS70D TO-220F Sch ematic diagram SSF5NS70F Description: The SSF5NS70G/D/F series MOS.
Manufacture

SILIKRON

Datasheet
Download SSF5NS70F Datasheet




 SSF5NS70F
Main Product Characteristics:
VDSS
RDS(on)
700V
1.23Ω (typ.)
ID 5A
Features and Benefits:
TO-251
SSF5NS70G
Feathers:
High dv/dt and avalanche capabilities
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
SSF5NS70G/D/F
TO-252
SSF5NS70D
TO-220F
Schematic diagram
SSF5NS70F
Description:
The SSF5NS70G/D/F series MOSFETs is a new technology, which combines an innovative technology
and advance process. This new technology achieves low Rdson, energy saving, high reliability and
uniformity, superior power density and space saving.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAR
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
For TO-251/TO-252 package
For TO-220F package
Linear Derating Factor
For TO-251/TO-252 package
For TO-220F package
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=22.4mH
Avalanche Current @ L=22.4mH
Operating Junction and Storage Temperature Range
Max.
5
3.1
15
50
31.2
0.4
0.25
700
± 30
54
2.2
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2012.11.16
www.silikron.com
Version : 1.3
page 1 of 10




 SSF5NS70F
SSF5NS70G/D/F
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient
(t ≤ 10s)
For TO-251/TO-252 package
For TO-220F package
For TO-251/TO-252 package
For TO-220F package
Typ.
Max.
2.5
4
75
80
Units
/W
/W
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
700
2
Typ.
1.23
2.9
2.8
8.3
2.3
2.6
10.1
18.4
16.8
14.8
272
168
3.14
Max.
1.4
4
1
50
100
-100
Units
V
Ω
V
μA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1A
TJ = 125°C
VDS = VGS, ID = 250μA
TJ = 125°C
VDS = 700V,VGS = 0V
TJ = 125°C
VGS =30V
VGS = -30V
ID = 4A,
VDS=100V,
VGS = 10V
VGS=10V, VDS =380V,
RGEN=18Ω,ID =4.5A
VGS = 0V
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
5
— — 15
0.84 1.2
284
1395
Units
A
A
V
nS
nC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=2.8A, VGS=0V
TJ = 25°C, IF = IS,
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2012.11.16
www.silikron.com
Version : 1.3
page 2 of 10




 SSF5NS70F
Test circuits and Waveforms
SSF5NS70G/D/F
Switch Waveforms:
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2012.11.16
www.silikron.com
Version : 1.3
page 3 of 10



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