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SSF6N60G Dataheets PDF



Part Number SSF6N60G
Manufacturers SILIKRON
Logo SILIKRON
Description N-Channel MOSFET
Datasheet SSF6N60G DatasheetSSF6N60G Datasheet (PDF)

Main Product Characteristics: VDSS RDS(on) 600V 1.32Ω (typ.) ID 6A Features and Benefits: TO-251  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF6N60G Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the .

  SSF6N60G   SSF6N60G



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Main Product Characteristics: VDSS RDS(on) 600V 1.32Ω (typ.) ID 6A Features and Benefits: TO-251  Advanced MOSFET process technology  Special designed for PWM, load switching and general purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recovery  150℃ operating temperature SSF6N60G Marking and pin Assignment Schematic diagram Description: It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute max Rating: Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VDS VGS EAS IAS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=30mH Avalanche Current @ L=30mH Operating Junction and Storage Temperature Range Max. 6 3.8 24 125 1.00 600 ± 30 421 5.3 -55 to +150 Units A W W/°C V V mJ A °C ©Silikron Semiconductor CO.,LTD. 2012.09.25 www.silikron.com Version : 1.1 page 1 of 8 SSF6N60G Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 1.00 110 Units ℃/W ℃/W Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS RDS(on) VGS(th) IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Parameter Drain-to-Source breakdown voltage Static Drain-to-Source on-resistance Gate threshold voltage Drain-to-Source leakage current Gate-to-Source forward leakage Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance Min. 600 — — 2 — — — — — — — — — — — — — — — Typ. — 1.32 2.92 — 1.86 — — — — 15.6 4.7 6.3 13.8 24.9 35.5 22.5 681 89 3.5 Max. — 1.5 — 4 — 1 50 100 -100 — — — — — — — — — — Units V Ω V μA nA nC Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 3A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 600V,VGS = 0V TJ = 125℃ VGS =30V VGS = -30V ID = 6A, VDS=480V, VGS = 10V VGS=10V, VDS=300V, ns RGEN=25Ω,ID=6A VGS = 0V pF VDS = 25V ƒ = 1MHz Source-Drain Ratings and Characteristics Symbol IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Min. — Typ. — Max. 6 — — 24 — 0.91 1.4 — 656 — — 3513 — Units A A V ns nC Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=6A, VGS=0V TJ = 25°C, IF =6A, di/dt = 100A/μs ©Silikron Semiconductor CO.,LTD. 2012.09.25 www.silikron.com Version : 1.1 page 2 of 8 Test circuits and Waveforms SSF6N60G Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C ©Silikron Semiconductor CO.,LTD. 2012.09.25 www.silikron.com Version : 1.1 page 3 of 8 Typical electrical and thermal characteristics SSF6N60G Figure 1: Typical Output Characteristics Figure 2. Gate to source cut-off voltage Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature Figure 4: Normalized On-Resistance Vs. Case Temperature ©Silikron Semiconductor CO.,LTD. 2012.09.25 www.silikron.com Version : 1.1 page 4 of 8 Typical electrical and thermal characteristics SSF6N60G Figure 5. Maximum Drain Current Vs. Case Temperature Case Temperature Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case ©Silikron Semiconductor CO.,LTD. 2012.09.25 www.silikron.com Version : 1.1 page 5 of 8 Mechanical Data: SSF6N60G ©Silikron Semiconductor CO.,LTD. 2012.09.25 www.silikron.com Version : 1.1 page 6 of 8 Ordering and Marking Information Device Marking: SSF6N60G Package (Available) TO-251(IPAK) Operating Temperature Range C : -55 to 150 ºC SSF6N60G Devices per Unit Package Units/ Type Tube TO-251 80 Tubes/Inner Box 60 Units/Inner Box 4800 Inner Boxes/Carton Box 5 Units/Carton Box 24000 Reliability Test Program Test Item High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) Conditions Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR Tj=150℃ @ 100% of Max VGSS Duration 168 hours 500 hours 1000 hours Sample Size 3 lots x 77 devices 168 hours 3 lots x 77 devices 500 hours 1000 hours ©Silikron Semiconductor CO.,LTD. 2012.09.25 www.silikron.com Version : 1.1 page 7 of 8 SSF6N60G ATTENTION: ■ A.


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