Document
Main Product Characteristics:
VDSS RDS(on)
600V 1.32Ω (typ.)
ID 6A
Features and Benefits:
TO-251
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF6N60G
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=30mH Avalanche Current @ L=30mH Operating Junction and Storage Temperature Range
Max. 6 3.8 24
125 1.00 600 ± 30 421 5.3 -55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2012.09.25 www.silikron.com
Version : 1.1
page 1 of 8
SSF6N60G
Thermal Resistance
Symbol RθJC RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④
Typ. — —
Max. 1.00 110
Units ℃/W ℃/W
Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss
Parameter Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time Rise time Turn-Off delay time Fall time Input capacitance Output capacitance Reverse transfer capacitance
Min.
600 — —
2 — — — — — — — — — — — — — — —
Typ. — 1.32 2.92 — 1.86 — — — — 15.6 4.7 6.3 13.8 24.9 35.5 22.5 681 89 3.5
Max. — 1.5 — 4 — 1 50 100
-100 — — — — — — — — — —
Units V Ω V μA nA
nC
Conditions VGS = 0V, ID = 250μA VGS=10V,ID = 3A TJ = 125℃ VDS = VGS, ID = 250μA TJ = 125℃ VDS = 600V,VGS = 0V TJ = 125℃ VGS =30V VGS = -30V ID = 6A, VDS=480V, VGS = 10V
VGS=10V, VDS=300V, ns
RGEN=25Ω,ID=6A
VGS = 0V pF VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol IS
ISM VSD trr Qrr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. —
Typ. —
Max. 6
— — 24
— 0.91 1.4 — 656 — — 3513 —
Units A
A V ns nC
Conditions MOSFET symbol showing the integral reverse p-n junction diode. IS=6A, VGS=0V TJ = 25°C, IF =6A, di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2012.09.25 www.silikron.com
Version : 1.1
page 2 of 8
Test circuits and Waveforms
SSF6N60G
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2012.09.25 www.silikron.com
Version : 1.1
page 3 of 8
Typical electrical and thermal characteristics
SSF6N60G
Figure 1: Typical Output Characteristics
Figure 2. Gate to source cut-off voltage
Figure 3. Drain-to-Source Breakdown Voltage Vs. Case Temperature
Figure 4: Normalized On-Resistance Vs. Case Temperature
©Silikron Semiconductor CO.,LTD.
2012.09.25 www.silikron.com
Version : 1.1
page 4 of 8
Typical electrical and thermal characteristics
SSF6N60G
Figure 5. Maximum Drain Current Vs. Case Temperature
Case Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source Voltage
Figure7. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2012.09.25 www.silikron.com
Version : 1.1
page 5 of 8
Mechanical Data:
SSF6N60G
©Silikron Semiconductor CO.,LTD.
2012.09.25 www.silikron.com
Version : 1.1
page 6 of 8
Ordering and Marking Information
Device Marking: SSF6N60G
Package (Available) TO-251(IPAK)
Operating Temperature Range C : -55 to 150 ºC
SSF6N60G
Devices per Unit
Package Units/
Type
Tube
TO-251
80
Tubes/Inner Box
60
Units/Inner Box
4800
Inner Boxes/Carton Box
5
Units/Carton Box
24000
Reliability Test Program
Test Item
High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB)
Conditions
Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR
Tj=150℃ @ 100% of Max VGSS
Duration
168 hours 500 hours 1000 hours
Sample Size
3 lots x 77 devices
168 hours 3 lots x 77 devices 500 hours 1000 hours
©Silikron Semiconductor CO.,LTD.
2012.09.25 www.silikron.com
Version : 1.1
page 7 of 8
SSF6N60G
ATTENTION:
■ A.