SSF6N80A

Advanced Power MOSFET SSF6N80A FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed O1 Gate-to-Source Voltage Single Pulsed Avalanche Energy O2 Avalanche Current O1 Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 ΟC) Linear Derating Factor O1 O3 Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8“from case for 5-seconds BVDSS = 800 V RDS(on) = 2.0 Ω ID = 4.5 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Value 800 4.5 2.8 24 +_ 30 486 4.5 9 2.0 90 0.72 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/ΟC ΟC Thermal Resistance Symbol R θJC R θJA Characteristic Junction-to-Case Junction-to-Ambient Typ. --- Max. 1.39 40 Units ΟC/W ©1999 Fairchild Semiconductor Corporation Rev. B SSF6N80A N-CHANNEL POWER MOSFET Electrical Characteristics (TC=25ΟC unless otherwise specified) Symbol BVDSS ∆BV/∆TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Characteristic Min. Typ. Max. Units Test Condition Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coeff. Gate Threshol...