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Power MOSFET. SSF6N80A Datasheet

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Power MOSFET. SSF6N80A Datasheet






SSF6N80A MOSFET. Datasheet pdf. Equivalent




SSF6N80A MOSFET. Datasheet pdf. Equivalent





Part

SSF6N80A

Description

Advanced Power MOSFET



Feature


Advanced Power MOSFET SSF6N80A FEATURE S Avalanche Rugged Technology Rugged Ga te Oxide Technology Lower Input Capacit ance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ.) Absolute Maximum R atings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characterist ic Drain-to-Source V.
Manufacture

Fairchild Semiconductor

Datasheet
Download SSF6N80A Datasheet


Fairchild Semiconductor SSF6N80A

SSF6N80A; oltage Continuous Drain Current (TC=25 ΟC) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed O1 Gate-to -Source Voltage Single Pulsed Avalanch e Energy O2 Avalanche Current O1 Re petitive Avalanche Energy Peak Diode Re covery dv/dt Total Power Dissipation (T C=25 ΟC) Linear Derating Factor O1 O3 Operating Junction and Storage Tempe rature Range Maximum.


Fairchild Semiconductor SSF6N80A

Lead Temp. for Soldering Purposes, 1/8 “from case for 5-seconds BVDSS = 800 V RDS(on) = 2.0 Ω ID = 4.5 A TO-3PF 1 2 3 1.Gate 2. Drain 3. Source Value 800 4.5 2.8 24 +_ 30 486 4.5 9 2.0 90 0.72 - 55 to +150 300 Units V A A V mJ A mJ V/ns W W/ΟC ΟC Thermal Resista nce Symbol R θJC R θJA Characterist ic Junction-to-Case Junction-to-Ambient Typ. --- Max. 1.39 40 .


Fairchild Semiconductor SSF6N80A

Units ΟC/W ©1999 Fairchild Semiconduc tor Corporation Rev. B SSF6N80A N-CH ANNEL POWER MOSFET Electrical Characte ristics (TC=25ΟC unless otherwise spec ified) Symbol BVDSS ∆BV/∆TJ VGS(th ) IGSS IDSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Charac teristic Min. Typ. Max. Units Test Co ndition Drain-Source Breakdown Voltage Breakdown Voltage Temp. .

Part

SSF6N80A

Description

Advanced Power MOSFET



Feature


Advanced Power MOSFET SSF6N80A FEATURE S Avalanche Rugged Technology Rugged Ga te Oxide Technology Lower Input Capacit ance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 800V Low RDS(ON) : 1.472 Ω (Typ.) Absolute Maximum R atings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characterist ic Drain-to-Source V.
Manufacture

Fairchild Semiconductor

Datasheet
Download SSF6N80A Datasheet




 SSF6N80A
Advanced Power MOSFET
SSF6N80A
FEATURES
Avalanche Rugged Technology
Rugged Gate Oxide Technology
Lower Input Capacitance
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25 µA (Max.) @ VDS = 800V
Low RDS(ON) : 1.472 (Typ.)
Absolute Maximum Ratings
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
PD
TJ , TSTG
TL
Characteristic
Drain-to-Source Voltage
Continuous Drain Current (TC=25 ΟC)
Continuous Drain Current (TC=100 ΟC)
Drain Current-Pulsed
O1
Gate-to-Source Voltage
Single Pulsed Avalanche Energy
O2
Avalanche Current
O1
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Total Power Dissipation (TC=25 ΟC)
Linear Derating Factor
O1
O3
Operating Junction and
Storage Temperature Range
Maximum Lead Temp. for Soldering
Purposes, 1/8“from case for 5-seconds
BVDSS = 800 V
RDS(on) = 2.0
ID = 4.5 A
TO-3PF
1
2
3
1.Gate 2. Drain 3. Source
Value
800
4.5
2.8
24
+_ 30
486
4.5
9
2.0
90
0.72
- 55 to +150
300
Units
V
A
A
V
mJ
A
mJ
V/ns
W
W/ΟC
ΟC
Thermal Resistance
Symbol
R θJC
R θJA
Characteristic
Junction-to-Case
Junction-to-Ambient
Typ.
--
--
Max.
1.39
40
Units
ΟC/W
©1999 Fairchild Semiconductor Corporation
Rev. B




 SSF6N80A
SSF6N80A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
BV/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
800 -- -- V
-- 0.93 -- V/ΟC
2.0 -- 3.5 V
-- -- 100 nA
-- -- -100
-- -- 25
-- -- 250 µA
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=800V
VDS=640V,TC=125ΟC
Static Drain-Source
On-State Resistance
-- -- 2.0 VGS=10V,ID=0.85A O4 *
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 3.87 -- VDS=50V,ID=0.85A O4
-- 1500 1950
-- 140 165 pF VGS=0V,VDS=25V,f =1MHz
See Fig 5
-- 57 66
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 23 55
-- 40 90
VDD=400V,ID=2A,
-- 92 195 ns RG=16
-- 34 80
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(Filler Charge
-- 67 88
-- 11.2 --
-- 29.6 --
VDS=640V,VGS=10V,
nC ID=2A
O4 O5
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
--
O1 --
-- 4.5
Integral reverse pn-diode
A
-- 24
in the MOSFET
O4 -- -- 1.4 V TJ=25 ΟC,IS=4.5A,VGS=0V
-- 520 -- ns TJ=25 ΟC,IF=7A
-- 6.66 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=45mH, IAS=4.5A, VDD=50V, RG=27, Starting TJ =25 ΟC
O3 ISD<_ 7A, di/dt <_150A/ µs, VDD <_ BVDSS , Starting TJ =25 ΟC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature




 SSF6N80A
N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
VGS
Top : 15V
101 10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
@ Notes :
1. 250µs Pulse Test
2. TC = 25oC
100 101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
5
4
VGS = 10 V
3
2
VGS = 20 V
1
@ Note : TJ = 25 oC
0
0 5 10 15 20 25
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
2500
2000
Ciss= Cgs+ Cgd ( Cds= shorted)
Coss= Cds+ Cgd
Crss= Cgd
C iss
1500
1000
500
0
100
C oss
C rss
@ Notes :
1. VGS = 0 V
2. f = 1 MHz
101
VDS , Drain-Source Voltage [V]
SSF6N80A
Fig 2. Transfer Characteristics
101
100
10-1
2
150 oC
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. VDS = 50 V
3. 250µs Pulse Test
468
VGS , Gate-Source Voltage [V]
10
Fig 4. Source-Drain Diode Forward Voltage
101
100
10-1
0.2
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250µs Pulse Test
0.4 0.6 0.8 1.0 1.2
VSD , Source-Drain Voltage [V]
1.4
Fig 6. Gate Charge vs. Gate-Source Voltage
10 VDS = 160 V
VDS = 400 V
VDS = 640 V
5
@ Notes : ID = 7.0 A
0
0 10 20 30 40 50 60 70
QG , Total Gate Charge [nC]



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