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N-Channel MOSFET. SSF6N70G Datasheet

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N-Channel MOSFET. SSF6N70G Datasheet






SSF6N70G MOSFET. Datasheet pdf. Equivalent




SSF6N70G MOSFET. Datasheet pdf. Equivalent





Part

SSF6N70G

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) 700V 1.49Ω (typ.) ID 6A Feature s and Benefits: TO-251  Advanced M OSFET process technology  Special de signed for PWM, load switching and gene ral purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recover y  150℃ operating temperature SSF 6N70G Marking and pin Assignme.
Manufacture

SILIKRON

Datasheet
Download SSF6N70G Datasheet


SILIKRON SSF6N70G

SSF6N70G; nt Schematic diagram Description: It u tilizes the latest processing technique s to achieve the high cell density and reduces the on-resistance with high rep etitive avalanche rating. These feature s combine to make this design an extrem ely efficient and reliable device for u se in power switching application and a wide variety of other applications. A bsolute max Rating.


SILIKRON SSF6N70G

: Symbol ID @ TC = 25°C ID @ TC = 100 C IDM PD @TC = 25°C VDS VGS EAS IAS T J TSTG Parameter Continuous Drain Curr ent, VGS @ 10V① Continuous Drain Curr ent, VGS @ 10V① Pulsed Drain Current Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-So urce Voltage Single Pulse Avalanche Ene rgy @ L=20mH Avalanche Current @ L=20mH Operating Junction and Stora.


SILIKRON SSF6N70G

ge Temperature Range Max. 6 3.8 24 113 0.91 700 ± 30 313 5.6 -55 to +150 Uni ts A W W/°C V V mJ A °C ©Silikron S emiconductor CO.,LTD. 2013.06.14 www.s ilikron.com Version : 1.0 page 1 of 8 SSF6N70G Thermal Resistance Symbol RθJC RθJA Characterizes Junction-to- case③ Junction-to-ambient (t ≤ 10s) ④ Typ. — — Max. 1.1 110 Units ℃/W ℃/W Electrical Characterizes.

Part

SSF6N70G

Description

N-Channel MOSFET



Feature


Main Product Characteristics: VDSS RDS( on) 700V 1.49Ω (typ.) ID 6A Feature s and Benefits: TO-251  Advanced M OSFET process technology  Special de signed for PWM, load switching and gene ral purpose applications  Ultra low on-resistance with low gate charge  Fast switching and reverse body recover y  150℃ operating temperature SSF 6N70G Marking and pin Assignme.
Manufacture

SILIKRON

Datasheet
Download SSF6N70G Datasheet




 SSF6N70G
Main Product Characteristics:
VDSS
RDS(on)
700V
1.49Ω (typ.)
ID 6A
Features and Benefits:
TO-251
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150operating temperature
SSF6N70G
Marking and pin
Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=20mH
Avalanche Current @ L=20mH
Operating Junction and Storage Temperature Range
Max.
6
3.8
24
113
0.91
700
± 30
313
5.6
-55 to +150
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.06.14
www.silikron.com
Version : 1.0
page 1 of 8




 SSF6N70G
SSF6N70G
Thermal Resistance
Symbol
RθJC
RθJA
Characterizes
Junction-to-case
Junction-to-ambient (t ≤ 10s)
Typ.
Max.
1.1
110
Units
/W
/W
Electrical Characterizes @TA=25unless otherwise specified
Symbol
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Drain-to-Source breakdown voltage
Static Drain-to-Source on-resistance
Gate threshold voltage
Drain-to-Source leakage current
Gate-to-Source forward leakage
Total gate charge
Gate-to-Source charge
Gate-to-Drain("Miller") charge
Turn-on delay time
Rise time
Turn-Off delay time
Fall time
Input capacitance
Output capacitance
Reverse transfer capacitance
Min.
700
2
Typ.
1.49
3.12
2.0
16
5.5
4.6
15
20
41
24
881
91
1.6
Max.
1.7
4
1
50
100
-100
Units
V
Ω
V
μA
nA
nC
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 3A
TJ = 125
VDS = VGS, ID = 250μA
TJ = 125
VDS = 700V,VGS = 0V
TJ = 125
VGS =30V
VGS = -30V
ID = 6A,
VDS=400V,
VGS = 10V
VGS=10V, VDS=350V,
ns
RGEN=25Ω,ID=6A
VGS = 0V
pF VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min.
Typ.
Max.
6
— — 24
0.86 1.4
589
3.7
Units
A
A
V
ns
μC
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
IS=6A, VGS=0V
TJ = 25°C, IF =6A,
di/dt = 100A/μs
©Silikron Semiconductor CO.,LTD.
2013.06.14
www.silikron.com
Version : 1.0
page 2 of 8




 SSF6N70G
Test circuits and Waveforms
SSF6N70G
Switch Waveforms:
Notes:
Calculated continuous current based on maximum allowable junction temperature.
Repetitive rating; pulse width limited by max. junction temperature.
The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
©Silikron Semiconductor CO.,LTD.
2013.06.14
www.silikron.com
Version : 1.0
page 3 of 8



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