N-Channel MOSFET
Main Product Characteristics:
VDSS RDS(on)
800V 2.35Ω (typ.)
ID 5.5A
Features and Benefits:
TO-251 (IPAK)
Advanc...
Description
Main Product Characteristics:
VDSS RDS(on)
800V 2.35Ω (typ.)
ID 5.5A
Features and Benefits:
TO-251 (IPAK)
Advanced MOSFET process technology Special designed for PWM, load switching and
general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature
SSF6N80G
Marking and pin Assignment
Schematic diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol ID @ TC = 25°C ID @ TC = 100°C IDM
PD @TC = 25°C
VDS VGS EAS IAS TJ TSTG
Parameter Continuous Drain Current, VGS @ 10V① Continuous Drain Current, VGS @ 10V① Pulsed Drain Current② Power Dissipation③ Linear Derating Factor Drain-Source Voltage Gate-to-Source Voltage Single Pulse Avalanche Energy @ L=33.5mH Avalanche Current @ L=33.5mH Operating Junction and Storage Temperature Range
Max. 5.5 3.2 22 69 0.55 800 ± 30 339 4.5 -55 to +150
Units
A
W W/°C
V V mJ A °C
©Silikron Semiconductor CO.,LTD.
2013.08.09 www.silikron.com
Version : 1.1
page 1 of 8
SSF6N80G
Thermal Resistance
Symbol RθJC
RθJA
Characterizes Junction-to-case③ Junction-to-ambient (t ≤ 10s) ④ Junction-to-Ambient (PCB mounted, steady-state) ④
Typ. — — —
Max. 1....
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