KTA1504S

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). Low Noise : NF=1dB(Typ.), 10dB(Max.). Complementary to KTC3875S. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current VCBO VCEO VEBO IC Base Current IB Collector Power Dissipation PC Junction Temperature Tj Storage Temperature Range Tstg RATING -50 -50 -5 -150 -30 150 150 -55 150 UNIT V V V mA mA mW KTA1504S EPITAXIAL PLANAR PNP TRANSISTOR E L BL DIM MILLIMETERS A 2.93+_ 0.20 B 1.30+0.20/-0.15 A G H D 23 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 Q PP L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 C N K J P7 Q 0.1 MAX M 1. EMITTER 2. BASE 3. COLLECTOR SOT-23 Marking hFE Rank ASType Name Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current ICBO VCB=-50V, IE=0 Emitter Cut-off Current IEBO VEB=-5V, IC=0 DC Current Gain hFE(Note) VCE=-6V, IC=-2mA Collector-Emitter Saturation Voltage VCE(sat) IC=-100mA, IB=-10mA Transition Frequency fT VCE=-10V, IC=-1mA Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz Noise Figure VCE=-6V, IC=-0.1mA NF f=1kHz, Rg=10k Note : hFE Classification O:70 140 , Y:120 240 , GR(G):200 400 MIN. 70 80 - TYP. - -0.1 4.0 MAX. -0.1 -0.1 400 -0.3 7.0 UNIT A A V MHz pF - 1.0 1...