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NPN Silicon. MMBTA14 Datasheet

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NPN Silicon. MMBTA14 Datasheet






MMBTA14 Silicon. Datasheet pdf. Equivalent




MMBTA14 Silicon. Datasheet pdf. Equivalent





Part

MMBTA14

Description

Darlington Amplifier Transistor NPN Silicon



Feature


Elektronische Bauelemente MMBTA13 MMBTA 14 Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffi x of "-C" specifies halogen & lead-free 3 1 2 COLLECTOR 3 BASE 1 EMITTER 2 A L 3 BS 12 VG FEATURES C Power diss ipation D PCM : 0.3W Tamb=25 Collect or current ICM : 0.3A Collector-base v oltage V(BR)CBO : 30V Operating and st orage junction tem.
Manufacture

SeCoS

Datasheet
Download MMBTA14 Datasheet


SeCoS MMBTA14

MMBTA14; perature range TJ Tstg: -55 to +150 H K SOT-23 Dim Min Max A 2.800 3.040 B 1.200 1.400 C 0.890 1.110 D 0.370 0.500 G 1.780 2.040 H 0.013 0.100 J 0.085 0. 177 K 0.450 0.600 J L 0.890 1.020 S 2.1 00 2.500 V 0.450 0.600 All Dimension in mm ELECTRICAL CHARACTERISTICS Tamb=25 Parameter Symbol unless otherwise s pecified Test conditions MIN Collect or-base breakdown .


SeCoS MMBTA14

voltage V(BR)CBO Ic= 100μA, IE=0 30 Collector-emitter breakdown voltage V(BR)CEO Ic= 100uA, IB=0 30 Collect or-emitter breakdown voltage V(BR)EBO IE= 100μA, Ic=0 10 MAX Collector cut-off current ICBO VCB=30 V , IE=0 0.1 Emitter cut-off current DC curren t gain Collector-emitter saturation vol tage IEBO hFE(1) * hFE(2) * VCE (sat) * VEB= 10V , IC=0 VCE=5V,.


SeCoS MMBTA14

IC= 10mA VCE=5V, IC= 100mA IC=100 mA, I B=0.1mA MMBTA13 MMBTA14 MMBTA13 MMBTA1 4 5000 10000 10000 20000 0.1 1.5 Bas e-emitter voltage VBE * VCE=5V,IC= 10 0mA 2.0 Transition frequency fT VCE =5V, IC= 10mA f=100MHz 125 UNIT V V V μA μA V V MHz * Pulse Test : pulse width≤300μs,duty cycle≤2%。 Ma rking : MMBTA13:K2D;MMBTA14:K3D htt p://www.SeCoSGmbH.com 01-Jun-2004.

Part

MMBTA14

Description

Darlington Amplifier Transistor NPN Silicon



Feature


Elektronische Bauelemente MMBTA13 MMBTA 14 Darlington Amplifier Transistor NPN Silicon RoHS Compliant Product A suffi x of "-C" specifies halogen & lead-free 3 1 2 COLLECTOR 3 BASE 1 EMITTER 2 A L 3 BS 12 VG FEATURES C Power diss ipation D PCM : 0.3W Tamb=25 Collect or current ICM : 0.3A Collector-base v oltage V(BR)CBO : 30V Operating and st orage junction tem.
Manufacture

SeCoS

Datasheet
Download MMBTA14 Datasheet




 MMBTA14
Elektronische Bauelemente
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
RoHS Compliant Product
A suffix of "-C" specifies halogen & lead-free
3
1
2
COLLECTOR 3
BASE 1
EMITTER 2
A
L
3
BS
12
VG
FEATURES
C
Power dissipation
D
PCM : 0.3W Tamb=25
Collector current
ICM : 0.3A
Collector-base voltage
V(BR)CBO : 30V
Operating and storage junction temperature range
TJ Tstg: -55 to +150
H
K
SOT-23
Dim Min Max
A 2.800 3.040
B 1.200 1.400
C 0.890 1.110
D 0.370 0.500
G 1.780 2.040
H 0.013 0.100
J 0.085 0.177
K 0.450 0.600
J L 0.890 1.020
S 2.100 2.500
V 0.450 0.600
All Dimension in mm
ELECTRICAL CHARACTERISTICS Tamb=25
Parameter
Symbol
unless otherwise specified
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO Ic= 100μAIE=0
30
Collector-emitter breakdown voltage
V(BR)CEO Ic= 100uAIB=0
30
Collector-emitter breakdown voltage
V(BR)EBO IE= 100μAIc=0
10
MAX
Collector cut-off current
ICBO
VCB=30 V , IE=0
0.1
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE(1) *
hFE(2) *
VCE (sat) *
VEB= 10V , IC=0
VCE=5V, IC= 10mA
VCE=5V, IC= 100mA
IC=100 mA, IB=0.1mA
MMBTA13
MMBTA14
MMBTA13
MMBTA14
5000
10000
10000
20000
0.1
1.5
Base-emitter voltage
VBE *
VCE=5V,IC= 100mA
2.0
Transition frequency
fT
VCE=5V, IC= 10mA
f=100MHz
125
UNIT
V
V
V
μA
μA
V
V
MHz
* Pulse Test : pulse width≤300μs,duty cycle≤2%。
Marking : MMBTA13:K2DMMBTA14K3D
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 1 of 3




 MMBTA14
Elektronische Bauelemente
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
500
200
100
50
20
10
5.0
10 20
BANDWIDTH = 1.0 Hz
RS 0
10 µA
2.0
1.0
0.7
0.5
0.3
0.2
100 µA
IC = 1.0 mA
0.1
0.07
0.05
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk
f, FREQUENCY (Hz)
50Ăk 100Ăk
0.03
0.02
10
20
Figure 1. Noise Voltage
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100 µA
10 µA
50 100 200 500 1Ăk 2Ăk 5Ăk 10Ăk 20Ăk 50Ăk 100Ăk
f, FREQUENCY (Hz)
Figure 2. Noise Current
200
100 BANDWIDTH = 10 Hz TO 15.7 kHz
70 IC = 10 µA
50
30 100 µA
20
1.0 mA
14
12
10
8.0
6.0
4.0 IC = 1.0 mA
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 µA
100 µA
10
1.0 2.0
5.0 10 20 50 100 200
RS, SOURCE RESISTANCE (k)
500 1000
Figure 3. Total Wideband Noise Voltage
0
1.0 2.0
5.0 10 20 50 100 200
RS, SOURCE RESISTANCE (k)
500 1000
Figure 4. Wideband Noise Figure
1.0
0.7
0.5 D = 0.5
0.2
0.3
0.2
0.1
0.1
0.07
0.05
0.03
0.02
0.01
0.1
0.2
0.05
0.5
SINGLE PULSE
SINGLE PULSE
ZθJC(t) = r(t) RθJCąTJ(pk) - TC = P(pk) ZθJC(t)
ZθJA(t) = r(t) RθJAąTJ(pk) - TA = P(pk) ZθJA(t)
1.0 2.0
5.0 10
20 50
t, TIME (ms)
100 200
Figure 5. Thermal Response
500 1.0Ăk 2.0Ăk
5.0Ăk 10Ăk
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 2 of 3




 MMBTA14
Elektronische Bauelemente
MMBTA13
MMBTA14
Darlington Amplifier Transistor NPN Silicon
20 4.0
VCE = 5.0 V
10
TJ = 25°C
f = 100 MHz
2.0 TJ = 25°C
7.0 Cibo 1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0
0.04
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
0.2
0.5
1.0 2.0 0.5 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 7. High Frequency Current Gain
500
200Ăk
100Ăk
70Ăk
50Ăk
TJ = 125°C
25°C
30Ăk
20Ăk
10Ăk
7.0Ăk
5.0Ăk
-ā55°C
3.0Ăk
VCE = 5.0 V
2.0Ăk
5.0 7.0 10
20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
Figure 8. DC Current Gain
500
3.0
2.5
IC = 10 mA 50 mA
2.0
250 mA 500 mA
TJ = 25°C
1.5
1.0
0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IB, BASE CURRENT (µA)
Figure 9. Collector Saturation Region
1.6
TJ = 25°C
1.4
VBE(sat) @ IC/IB = 1000
1.2
VBE(on) @ VCE = 5.0 V
1.0
0.8
VCE(sat) @ IC/IB = 1000
-ā1.0 *APPLIES FOR IC/IB hFE/3.0
-ā2.0 *RqVC FOR VCE(sat)
-ā3.0
-ā4.0
qVB FOR VBE
-ā5.0
25°C TO 125°C
-ā55°C TO 25°C
25°C TO 125°C
-ā55°C TO 25°C
0.6
5.0 7.0
10 20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
-ā6.0
500 5.0 7.0 10
20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages
Figure 11. Temperature Coefficients
http://www.SeCoSGmbH.com
01-Jun-2004 Rev. B
Any changing of specification will not be informed individual
Page 3 of 3



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