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BIPOLAR TRANSISTORS. MMBTA13 Datasheet

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BIPOLAR TRANSISTORS. MMBTA13 Datasheet






MMBTA13 TRANSISTORS. Datasheet pdf. Equivalent




MMBTA13 TRANSISTORS. Datasheet pdf. Equivalent





Part

MMBTA13

Description

SOT-23 BIPOLAR TRANSISTORS



Feature


MMBTA13 SOT-23 BIPOLAR TRANSISTORS TRAN SISTOR(NPN) FEATURES * Power dissipati on PCM 0.3 W(Tamb=25OC) * Collector cur rent ICM 0.3 A * Collector-base voltage V(BR)CBO: 30 V * Operating and storage junction temperature range TJ,Tstg: -5 5OCto+150OC MECHANICAL DATA * Case: Mol ded plastic * Epoxy: UL 94V-O rate flam e retardant * Lead: MIL-STD-202E method 208C guaranteed *.
Manufacture

RECTRON

Datasheet
Download MMBTA13 Datasheet


RECTRON MMBTA13

MMBTA13; Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CH ARACTERISTICS Ratings at 25 oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resist ive or inductive load. For capacitive l oad, derate current by 20%. MAXIMUM RA TINGS ( @ TA = 25oC unless otherwise no ted ) RATINGS Max. Steady State Power D issipation (1) @TA.


RECTRON MMBTA13

=25oC Derate above 25OC Max. Operating T emperature Range Storage Temperature Ra nge SYMBOL PD TJ TSTG ELECTRICAL CHAR ACTERISTICS ( @ TA = 25oC unless otherw ise noted ) CHARACTERISTICS SYMBOL T hermal Resistance Junction to Ambient R qJA Notes: 1. Alumina=0.4*0.3*0.024i n.99.5% alumina 2. "Fully ROHS Complant ", "100% Sn plating (Pb-free)". COLLEC TOR 3 1 BASE 2 E.


RECTRON MMBTA13

MITTER 0.006(0.15) 0.003(0.08) 0.055(1 .40) 0.047(1.20) 0.020(0.50) 0.012(0.30 ) SOT-23 0.043(1.10) 0.035(0.90) 0.004 (0.10) 0.000(0.00) 0.020(0.50) 0.012(0 .30) 0.100(2.55) 0.089(2.25) 0.019(2. 00) 1 0.071(1.80) 0.118(3.00) 3 0.110( 2.80) 2 Dimensions in inches and (mil limeters) VALUE 300 150 -55 to +150 U NITS mW oC oC MIN. - TYP. - MAX. 417 UNITS oC/W 2007-.

Part

MMBTA13

Description

SOT-23 BIPOLAR TRANSISTORS



Feature


MMBTA13 SOT-23 BIPOLAR TRANSISTORS TRAN SISTOR(NPN) FEATURES * Power dissipati on PCM 0.3 W(Tamb=25OC) * Collector cur rent ICM 0.3 A * Collector-base voltage V(BR)CBO: 30 V * Operating and storage junction temperature range TJ,Tstg: -5 5OCto+150OC MECHANICAL DATA * Case: Mol ded plastic * Epoxy: UL 94V-O rate flam e retardant * Lead: MIL-STD-202E method 208C guaranteed *.
Manufacture

RECTRON

Datasheet
Download MMBTA13 Datasheet




 MMBTA13
MMBTA13
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Power dissipation
PCM 0.3 W(Tamb=25OC)
* Collector current
ICM 0.3 A
* Collector-base voltage
V(BR)CBO: 30 V
* Operating and storage junction temperature range
TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted )
RATINGS
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PD
TJ
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
SYMBOL
Thermal Resistance Junction to Ambient
R qJA
Notes: 1. Alumina=0.4*0.3*0.024in.99.5% alumina
2. "Fully ROHS Complant", "100% Sn plating (Pb-free)".
COLLECTOR
3
1
BASE
2
EMITTER
0.006(0.15)
0.003(0.08)
0.055(1.40)
0.047(1.20)
0.020(0.50)
0.012(0.30)
SOT-23
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
0.020(0.50)
0.012(0.30)
0.100(2.55)
0.089(2.25)
0.019(2.00) 1
0.071(1.80)
0.118(3.00)
3 0.110(2.80)
2
Dimensions in inches and (millimeters)
VALUE
300
150
-55 to +150
UNITS
mW
oC
oC
MIN.
-
TYP.
-
MAX.
417
UNITS
oC/W
2007-5




 MMBTA13
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage (IC= 100uAdc, VBE= 0)
Collector Cutoff Current (VCB= 30Vdc, IE= 0)
Emitter Cutoff Current (VEB= 10Vdc, IC= 0)
ON CHARACTERISTICS(1)
DC Current Gain (IC= 10mAdc, VCE= 5.0Vdc)
(IC= 100mAdc, VCE= 5.0Vdc)
Collector-Emitter Saturation Voltage (IC= 100mAdc, IB= 0.1mAdc)
Base-Emitter On Voltage (IC= 100mAdc, VCE= 5.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (2) (IC= 10mAdc, VCE= 5.0Vdc, f= 100MHz)
Notes : 1. Pulse Test: Pulse Width-<300ms,Duty Cycle-<2.0%
2. fT = |hfe|.ftest
Symbol
Min
V(BR)CES
ICBO
IEBO
30
-
-
hFE
VCE(sat)
VBE
5000
10,000
-
-
fT 125
Max
-
100
100
-
-
1.5
2.0
-
Unit
Vdc
nVdc
nVdc
-
Vdc
Vdc
MHz




 MMBTA13
RATING AND CHARACTERISTICS CURVES ( MMBTA13 )
500
BANDWIDTH = 1.0 Hz
RS~0
200
100
10uA
50
100uA
20
IC= 1.0 mA
10
5.0
10 20
200
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
Figure 1 Noise Voltage
BANDWIDTH = 10 Hz TO 15.7 kHz
100
70 IC=110.0uAmA
50
30 100 uA
20
1.0 mA
10
1.0 2.0 5.0 10 20
50 100 200 500 100
RS, SOURCE RESISTANCE (KW)
Figure 3. Total Wideband Noise Voltage
20
TJ=25OC
10
7.0 Cibo
5.0 Cobo
3.0
2.0
BANDWIDTH = 1.0 Hz
1.0
0.7
0.5 IC= 1.0 mA
0.3
0.2
0.1
0.07
0.05
0.03
0.02
10 20
14
12
100uA
10uA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz)
Figure 2 Noise Current
BANDWIDTH = 10 Hz TO 15.7 kHz
10
10 uA
8.0
100 uA
6.0
4.0 IC=1.0mA
2.0
0
1.0 2.0 5.0 10 20
50 100 200 500 100
RS, SOURCE RESISTANCE (KW)
Figure 4 Wideband Noise Figure
4.0
2.0 VfT=VfTJC=1=JC1E0=2E00=250M=55OM5.COH0.CH0VzVz
1.0
0.8
0.6
0.4
2.0
0.04
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
VR, REVERSE VOLTAGE (V)
Figure 5 Capacitance
0.2
0.5 1.0 2.0
0.5 10 20
50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 6 High Frequency Current Gain



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