MMBTA13

MMBTA13 NPN Silicon Epitaxial Planar Darlington Transistor SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Total Device Dissipation Derate above 25 OC Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature Range Symbol VCES VCBO VEBO IC Ptot RθJA Tj TS Value 30 30 10 500 200 2.8 357 150 -55 to +150 Unit V V V mA mW mW/ OC OC/W OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 MMBTA13 Characteristics at Tamb=25 OC DC Current Gain at IC=10mA, VCE=5V at IC=100mA, VCE=5V Collector Cutoff Current at VCB=30V Emitter Cutoff Current at VEB=10V Collector Emitter Breakdown Voltage at IC=100μA Collector Saturation Voltage at IC=100mA, IB=0.1mA Base On Voltage at IC=100mA, VCE=5V Current Gain – Bandwidth Product at IC=10mA, VCE=10V, f=100MHz Symbol Min. hFE 5000 hFE 10,000 ICBO IEBO - V(BR)CES 30 VCE(sat) - VBE(on) fT 125 Max. - 0.1 0.1 1.5 2 - Unit μA μA V V V MHz SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 20/10/2005 ...