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Purpose Transistor. MMBTA13 Datasheet

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Purpose Transistor. MMBTA13 Datasheet






MMBTA13 Transistor. Datasheet pdf. Equivalent




MMBTA13 Transistor. Datasheet pdf. Equivalent





Part

MMBTA13

Description

NPN General Purpose Transistor



Feature


BL Galaxy Electrical Production specifi cation NPN General Purpose Transistor FEATURES z Epitaxial planar die constr uction. z Complementary PNP type availa ble (MMBTA63/MMBTA64). z High current g ain. Pb Lead-free MMBTA13/MMBTA14 AP PLICATIONS z Ideal for medium power amp lification and switching ORDERING INFO RMATION Type No. Marking MMBTA13 MMB TA14 K2D K3D SOT.
Manufacture

Galaxy Semi-Conductor

Datasheet
Download MMBTA13 Datasheet


Galaxy Semi-Conductor MMBTA13

MMBTA13; -23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise spec ified Symbol VCBO VCEO VEBO Parameter collector-base voltage collector-emitt er voltage emitter-base voltage MMBTA1 3 MMBTA14 MMBTA13 MMBTA14 IC collector current (DC) PC Collector dissipation RθJA Thermal Resistance, Junction to Ambient Tj ,Tstg junction and storag e temperature Value .


Galaxy Semi-Conductor MMBTA13

30 30 30 30 10 0.3 0.35 357 -55-150 UNI T V V V A W °C/W °C Document number: BL/SSSTC121 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production speci fication NPN General Purpose Transisto r MMBTA13/MMBTA14 ELECTRICAL CHARACTER ISTICS @ Ta=25℃ unless otherwise spec ified Symbol Parameter Test condition s MIN. MAX. Collector-base breakdown voltage V(BR)CBO MMB.


Galaxy Semi-Conductor MMBTA13

TA13 IC=100μA,IE=0 MMBTA14 30 30 V(BR )CEO V(BR)EBO ICBO ICEO hFE Collector- emitter breakdown voltage MMBTA13 MMB TA14 Emitter-base breakdown voltage c ollector cut-off current collector cut -off current DC current gain MMBTA13 MMBTA14 MMBTA13 MMBTA14 IC=0.1mA,IB =B 0 IE=100μA,IC=0 IE = 0; VCB = 30V I E = 0; VCE = 10V VCE = 5V; IC= 10mA VCE = 5V;IC = 10mA VCE .

Part

MMBTA13

Description

NPN General Purpose Transistor



Feature


BL Galaxy Electrical Production specifi cation NPN General Purpose Transistor FEATURES z Epitaxial planar die constr uction. z Complementary PNP type availa ble (MMBTA63/MMBTA64). z High current g ain. Pb Lead-free MMBTA13/MMBTA14 AP PLICATIONS z Ideal for medium power amp lification and switching ORDERING INFO RMATION Type No. Marking MMBTA13 MMB TA14 K2D K3D SOT.
Manufacture

Galaxy Semi-Conductor

Datasheet
Download MMBTA13 Datasheet




 MMBTA13
BL Galaxy Electrical
Production specification
NPN General Purpose Transistor
FEATURES
z Epitaxial planar die construction.
z Complementary PNP type available
(MMBTA63/MMBTA64).
z High current gain.
Pb
Lead-free
MMBTA13/MMBTA14
APPLICATIONS
z Ideal for medium power amplification and switching
ORDERING INFORMATION
Type No.
Marking
MMBTA13
MMBTA14
K2D
K3D
SOT-23
Package Code
SOT-23
SOT-23
MAXIMUM RATING @ Ta=25unless otherwise specified
Symbol
VCBO
VCEO
VEBO
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
MMBTA13
MMBTA14
MMBTA13
MMBTA14
IC collector current (DC)
PC Collector dissipation
RθJA Thermal Resistance, Junction to Ambient
Tj ,Tstg
junction and storage temperature
Value
30
30
30
30
10
0.3
0.35
357
-55-150
UNIT
V
V
V
A
W
°C/W
°C
Document number: BL/SSSTC121
Rev.A
www.galaxycn.com
1




 MMBTA13
BL Galaxy Electrical
Production specification
NPN General Purpose Transistor MMBTA13/MMBTA14
ELECTRICAL CHARACTERISTICS @ Ta=25unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX.
Collector-base breakdown voltage
V(BR)CBO
MMBTA13 IC=100μA,IE=0
MMBTA14
30 -
30
V(BR)CEO
V(BR)EBO
ICBO
ICEO
hFE
Collector-emitter breakdown voltage
MMBTA13
MMBTA14
Emitter-base breakdown voltage
collector cut-off current
collector cut-off current
DC current gain
MMBTA13
MMBTA14
MMBTA13
MMBTA14
IC=0.1mA,IB=B 0
IE=100μA,IC=0
IE = 0; VCB = 30V
IE = 0; VCE = 10V
VCE = 5V; IC= 10mA
VCE = 5V;IC = 10mA
VCE = 5V;IC = 100mA
VCE = 5V;IC = 100mA
30
30
10
-
-
5000
10000
10000
20000
-
-
0.1
0.1
-
VCE(sat)
collector-emitter saturation voltage IC = 100mA; IBB = 0.1mA
-
1.5
fT transition frequency
IC = 10mA; VCE = 5.0V;
f = 100MHz
125
-
UNIT
V
V
V
μA
μA
V
MHz
PACKAGE OUTLINE
Plastic surface mounted package
A
KB
E
D
G
J
H
C
SOT-23
SOT-23
Dim Min Max
A 2.85 2.95
B 1.25 1.35
C 1.0Typical
D 0.37 0.43
E 0.35 0.48
G 1.85 1.95
H 0.02 0.1
J 0.1Typical
K 2.35 2.45
All Dimensions in mm
Document number: BL/SSSTC121
Rev.A
www.galaxycn.com
2




 MMBTA13
BL Galaxy Electrical
NPN General Purpose Transistor
Production specification
MMBTA13/MMBTA14
SOLDERING FOOTPRINT
Unit : mm
PACKAGE INFORMATION
Device
Package
Shipping
MMBTA13/MMBTA14 SOT-23 3000/Tape&Reel
Document number: BL/SSSTC121
Rev.A
www.galaxycn.com
3



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