MMBTA14

BL Galaxy Electrical Production specification NPN General Purpose Transistor FEATURES z Epitaxial planar die construction. z Complementary PNP type available (MMBTA63/MMBTA64). z High current gain. Pb Lead-free MMBTA13/MMBTA14 APPLICATIONS z Ideal for medium power amplification and switching ORDERING INFORMATION Type No. Marking MMBTA13 MMBTA14 K2D K3D SOT-23 Package Code SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol VCBO VCEO VEBO Parameter collector-base voltage collector-emitter voltage emitter-base voltage MMBTA13 MMBTA14 MMBTA13 MMBTA14 IC collector current (DC) PC Collector dissipation RθJA Thermal Resistance, Junction to Ambient Tj ,Tstg junction and storage temperature Value 30 30 30 30 10 0.3 0.35 357 -55-150 UNIT V V V A W °C/W °C Document number: BL/SSSTC121 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN General Purpose Transistor MMBTA13/MMBTA14 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test conditions MIN. MAX. Collector-base breakdown voltage V(BR)CBO MMBTA13 IC=100μA,IE=0 MMBTA14 30 30 V(BR)CEO V(BR)EBO ICBO ICEO hFE Collector-emitter breakdown voltage MMBTA13 MMBTA14 Emitter-base breakdown voltage collector cut-off current collector cut-off current DC current gain MMBTA13 MMBTA14 MMBTA13 MMBTA14 IC=0.1mA,IB=B 0 IE=100μA,IC=0 IE = 0; VCB = 30V IE = 0; VCE = 10V VCE = 5V; IC= 10mA VCE = 5V;IC = 10mA VCE = 5V;IC = 100mA VCE ...