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Darlington Amplifier. MMBTA14 Datasheet

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Darlington Amplifier. MMBTA14 Datasheet






MMBTA14 Amplifier. Datasheet pdf. Equivalent




MMBTA14 Amplifier. Datasheet pdf. Equivalent





Part

MMBTA14

Description

NPN Transistors Darlington Amplifier



Feature


MMBTA13 MMBTA14 NPN Transistors Darling ton Amplifier COLLECTOR 3 BASE 1 MAXI MUM R ATING S R ating C ollector- E mit ter Voltage C ollector- B as e Voltage E mitter- B as e Voltage C ollector C u rrent - C ontinuous THE R MAL C HAR AC TE R IS TIC S C harac teris tic Total D evice Dis s ipation F R ±5 B oard(1) T A = 25 C Derate above 25 C T hermal R e s is tance J unctio.
Manufacture

WEITRON

Datasheet
Download MMBTA14 Datasheet


WEITRON MMBTA14

MMBTA14; n to Ambient Total Device Dis s ipation Alumina S ubs trate,(2) TA = 25 C Derat e above 25 C T hermal R es is tance J u nction to Ambient J unction and S torag e Temperature DE VIC E MAR K ING MMB TA 13 = 1M; MMB T A14LT 1 = 1N S ymbol VC ES VCBO VEBO IC S ymbol PD R JA PD R qJ A T J , Ts tg Value 30 30 10 300 Max 2 25 1.8 556 300 2.4 417 - 55 to +150 Un it V dc V dc V dc .


WEITRON MMBTA14

mAdc Unit mW mW/ C C /W mW mW/ C C /W C __ __ __ __ E L E C T R IC A L C HA R A C T E R IS T IC S (TA = 25 C unless otherwise noted) C harac teris tic OFF C HAR AC TE R IS TIC S C ollector- E mi tter B reakdown Voltage (IC = 100 uAdc, V B E = 0) C ollector C utoff C urrent (V C B = 30 V dc, IE = 0) E mitter C u toff C urrent (V E B = 10 V dc, IC = 0) 1. F R - 5 = 1.0 .


WEITRON MMBTA14

0.75 0.062 in. 2. Alumina = 0.4 0.3 0.02 4 in. 99.5% alumina. S ymbol Min V(B R )CE S IC BO IE BO 30 - EMITTER 2 3 1 2 S OT-23 Max Unit - V dc 100 nAdc 10 0 nAdc WEITRON http://www.weitron.com. tw MMBTA13 MMBTA14 E L E C T R IC A L C HA R A C T E R IS T IC S (TA = 25 C unless otherwise noted) (C ontinued) C harac teris tic ON C HAR AC TE R IS TIC S (3) S ymbol D.

Part

MMBTA14

Description

NPN Transistors Darlington Amplifier



Feature


MMBTA13 MMBTA14 NPN Transistors Darling ton Amplifier COLLECTOR 3 BASE 1 MAXI MUM R ATING S R ating C ollector- E mit ter Voltage C ollector- B as e Voltage E mitter- B as e Voltage C ollector C u rrent - C ontinuous THE R MAL C HAR AC TE R IS TIC S C harac teris tic Total D evice Dis s ipation F R ±5 B oard(1) T A = 25 C Derate above 25 C T hermal R e s is tance J unctio.
Manufacture

WEITRON

Datasheet
Download MMBTA14 Datasheet




 MMBTA14
MMBTA13
MMBTA14
NPN Transistors Darlington Amplifier
COLLECTOR 3
BASE
1
MAXIMUM R ATING S
R ating
C ollector- E mitter Voltage
C ollector- B as e Voltage
E mitter- B as e Voltage
C ollector C urrent - C ontinuous
THE R MAL C HAR AC TE R IS TIC S
C harac teris tic
Total Device Dis s ipation F R ±5 B oard(1)
TA = 25 C
Derate above 25 C
T hermal R es is tance J unction to Ambient
Total Device Dis s ipation
Alumina S ubs trate,(2) TA = 25 C
Derate above 25 C
T hermal R es is tance J unction to Ambient
J unction and S torage Temperature
DE VIC E MAR K ING
MMB TA13 = 1M; MMB T A14LT 1 = 1N
S ymbol
VCES
VCBO
VEBO
IC
S ymbol
PD
R JA
PD
R qJA
T J , Ts tg
Value
30
30
10
300
Max
225
1.8
556
300
2.4
417
- 55 to +150
Unit
V dc
V dc
V dc
mAdc
Unit
mW
mW/ C
C /W
mW
mW/ C
C /W
C
E L E C T R IC A L C HA R A C T E R IS T IC S (TA = 25 C unless otherwise noted)
C harac teris tic
OFF C HAR AC TE R IS TIC S
C ollector- E mitter B reakdown Voltage
(IC = 100 uAdc, V B E = 0)
C ollector C utoff C urrent
(V C B = 30 V dc, IE = 0)
E mitter C utoff C urrent
(V E B = 10 V dc, IC = 0)
1. F R - 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
S ymbol
Min
V(BR )CE S
IC BO
IE BO
30
-
-
EMITTER 2
3
1
2
S OT-23
Max Unit
- V dc
100 nAdc
100 nAdc
WEITRON
http://www.weitron.com.tw




 MMBTA14
MMBTA13
MMBTA14
E L E C T R IC A L C HA R A C T E R IS T IC S (TA = 25 C unless otherwise noted) (C ontinued)
C harac teris tic
ON C HAR AC TE R IS TIC S (3)
S ymbol
DC C urrent G ain
(IC = 10 mAdc, V C E = 5.0 V dc)
MMB TA13
MMB TA14
hF E
(IC = 100 mAdc, V C E = 5.0 V dc)
C ollector- E mitter S aturation Voltage
(IC = 100 mAdc, IB = 0.1 mAdc)
B as e- E mitter On Voltage
(IC = 100 mAdc, V C E = 5.0 V dc)
S MAL L - S IG NAL C HAR AC TE R IS TIC S
C urrent- G ain - B andwidth P roduct (4)
(IC = 10 mAdc, V C E = 5.0 V dc, f = 100 MHz)
3. P uls e Tes t: P uls e Width 300 us , Duty C ycle
4. fT = |hfe| ftes t.
2.0%.
MMB TA13
MMB TA14
V C E (s at)
VBE
fT
Min
5000
10,000
10,000
20,000
-
-
125
RS
in
en
IDEAL
TRANSISTOR
Max
-
-
-
-
1.5
2.0
-
Unit
-
V dc
V dc
MHz
F IG .1. T rans is tor Nois e Model
500
200
100
50
20
10
5.0
10 20
BANDWIDTH = 1.0 Hz
RS @ 0
2.0
1.0
0.7
0.5
10mA
0.3
0.2
100mA
IC = 1.0 m A
0.1
0.07
0.05
50 100 200 500 1 k 2 k 5 k 10 k 20 k
f, FREQUENCY (Hz)
50 k 100 k
0.03
0.02
10
20
F IG .2 Nois e Voltage
BANDWIDTH = 1.0 Hz
IC = 1.0 mA
100mA
10 mA
50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (H z)
FIG.3 Nois e C urrent
WEITRON
http://www.weitron.com.tw




 MMBTA14
MMBTA13
MMBTA14
200
100 BANDWIDTH = 10 Hz TO 15.7 kHz
70 IC = 10 mA
50
30 100mA
20
1.0 mA
14
12
10
8.0
6.0
4.0 IC = 1.0 mA
2.0
BANDWIDTH = 10 Hz TO 15.7 kHz
10 mA
100 mA
10
1.0 2.0
5.0 10 20
50 100 200
RS, SOURCE RESISTANCE (kW)
500 1000
F IG .4 Total Wideband Nois e Voltage
0
1.0 2.0
5.0 10 20 50 100 200
RS, SOURCE RESISTANCE (kW)
500 1000
FIG.5 W ideband Nois e Figure
20 4.0
VCE = 5.0 V
10
TJ = 25 C
f = 100 MHz
2.0 TJ = 25 C
7.0 Cibo 1.0
5.0
Cobo
0.8
0.6
3.0 0.4
2.0
0.04
0.1 0.2 0.4 1.0 2.0 4.0 10 20 40
VR, REVERSE VOLTAGE (VOLTS)
F IG .6 C apac itanc e
0.2
0.5
1.0 2.0 0.5 10 20 50 100 200
IC, COLLECTOR CURRENT (mA)
FIG.7 High Frequency C urrent Gain
500
200 k
100 k
70 k
50 k
TJ = 125 C
25 C
30 k
20 k
10 k
7.0 k
5.0 k
- 55 C
3.0 k
VCE = 5.0 V
2.0 k
5.0 7.0 10
20 30 50 70 100 200 300
IC, COLLECTOR CURRENT (mA)
FIG.8 DC C urrent Gain
500
3.0
2.5
IC = 10 mA 50 mA
2.0
TJ = 25 C
250 mA 500 mA
1.5
1.0
0.5
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IB, BASE CURRENT (mA)
F IG .9 C ollec tor S aturation R egion
WEITRON
http://www.weitron.com.tw



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