PZTA42

SEMICONDUCTOR TECHNICAL DATA PZTA42 EPITAXIAL PLANAR NPN TRANSISTOR HIGH VOLTAGE APPLICATION. TELEPHONE APPLICATION. FEATURES Complementary to PZTA92. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature SYMBOL RATING VCBO VCEO VEBO IC IE PC * Tj 300 300 5.0 500 -500 1 150 Tstg -55 150 * Package Mounted On FR-4 PCB 36 18 1.5mm. : mountina pad for the collector lead min.6cm2 UNIT V V V mA mA W A HL 2 EB J 13 FF 1 C 23 D 1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER K G DIM A B C D E F G H J K L MILLIMETERS 6.5+_ 0.2 3.5+_ 0.2 1.8 MAX 0.7+0.15/-0.1 7+_ 0.3 2.3 TYP 0.26+0.09/-0.02 3.0+0.15/-0.1 1.75+_ 0.25 0.1 MAX 10 MAX SOT-223 Marking Type Name PZTA42 Lot No. ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage V(BR)CBO V(BE)CEO DC Current Gain * hFE Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage VBE(sat) Transition Frequency fT Collector Output Capacitance Cob *Pulse Test : Pulse Width 300 S, Duty Cycle 2.0% TEST CONDITION IC=100 A, IE=0 IC=1.0mA, IB=0 IC=1.0mA, VCE=10V IC=10mA, VCE=10V IC=30mA, VCE=10V IC=20mA, IB=2.0mA IC=20mA, IB=2.0mA VCE=20V, IC=10mA, f=100MHz VCB=20V, IE=0, f=1MHz MIN. 300 300 40 40 40 50 - TYP. - MAX. 0.5 0.9 3.0 UNIT V V V V MHz pF 2004. 05. 21 Revis...