PZTA42

NPN Silicon Planar Epitaxial Transistor BASE 1 COLLECTOR 2, 4 3 EMITTER PZTA42 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR 1 2 3 SOT-223 4 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C Junction Temperature Storage, Temperature Symbol VCEO VCBO VEBO IC(DC) PD Tj Tstg Device Marking PZTA42=A42 Value 300 300 6 500 2 150 -55 to +150 Unit V V V mA W ˚C ˚C ELECTRICAL CHARACTERISTICS Characteristics Collector-Emitter Breakdown Voltage (IC=1mA) Collector-Base Breakdown Voltage (IC=100µA) Emitter-Base Breakdown Voltage (IE=10 µA) Collector-Emitter Cutoff Current (VCB=300V) Emitter-Base Cutoff Current (VEB=6V) Symbol Min V(BR)CEO 300 V(BR)CBO 300 Typ - V(BR)EBO 6 - ICBO - - IEBO - - Max - Unit V V -V 100 nA 100 nA WEITRON http://www.weitron.com.tw 1/3 02-Jun-05 PZTA42 ON CHARACTERISTICS DC Current Gain (VCE = 10V,IC = 1mA) (VCE = 10V,IC = 10mA) (VCE = 10V,IC = 30mA) Collector-Emitter Saturation Voltages (IC = 20mA, IB = 2mA) Base-Emitter Saturation Voltages (IC = 20mA, IB = 2mA) DYNAMIC CHARACTERISTICS Current-Gain—Bandwidth Product (VCE = 20V, IC = 10mA, f = 100MHz) Output Capacitance (VCB = 20 Vdc, f = 1MHz) hFE1 25 hFE2 40 hFE3 40 - - - VCE(sat) - - 500 mV VBE(sat) - - 900 mV fT 50 - - MHz Cob - - 3 pF hFE, DC CURRENT GAIN 120 100 80 60 40 20 0 0.1 1.4 1.2 1.0 0.8 0.6 0.4 0.2 00 0.1 Typical Characteristics 80 fT, CURRE...