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Epitaxial Transistor. PZTA42 Datasheet

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Epitaxial Transistor. PZTA42 Datasheet






PZTA42 Transistor. Datasheet pdf. Equivalent




PZTA42 Transistor. Datasheet pdf. Equivalent





Part

PZTA42

Description

NPN Silicon Planar Epitaxial Transistor



Feature


NPN Silicon Planar Epitaxial Transistor BASE 1 COLLECTOR 2, 4 3 EMITTER PZTA4 2 1. BASE 2.COLLECTOR 3.EMITTER 4.COLL ECTOR 1 2 3 SOT-223 4 ABSOLUTE MAXI MUM RATINGS (Ta=25 C) Rating Collector- Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C J unction Temperature Storage, Temperatur e Symbol VCEO VCBO.
Manufacture

WEITRON

Datasheet
Download PZTA42 Datasheet


WEITRON PZTA42

PZTA42; VEBO IC(DC) PD Tj Tstg Device Marking PZTA42=A42 Value 300 300 6 500 2 150 - 55 to +150 Unit V V V mA W ˚C ˚C EL ECTRICAL CHARACTERISTICS Characteristic s Collector-Emitter Breakdown Voltage ( IC=1mA) Collector-Base Breakdown Voltag e (IC=100µA) Emitter-Base Breakdown Vo ltage (IE=10 µA) Collector-Emitter Cut off Current (VCB=300V) Emitter-Base Cut off Current (VEB=6V) .


WEITRON PZTA42

Symbol Min V(BR)CEO 300 V(BR)CBO 300 Typ - V(BR)EBO 6 - ICBO - - IEBO - - Max - Unit V V -V 100 nA 100 nA WEITRON http://www.weitron.com.tw 1/3 02-Jun-05 PZTA42 ON CHARACTERISTI CS DC Current Gain (VCE = 10V,IC = 1mA) (VCE = 10V,IC = 10mA) (VCE = 10V,IC = 30mA) Collector-Emitter Saturation Volt ages (IC = 20mA, IB = 2mA) Base-Emitter Saturation Voltag.


WEITRON PZTA42

es (IC = 20mA, IB = 2mA) DYNAMIC CHARACT ERISTICS Current-Gain—Bandwidth Produ ct (VCE = 20V, IC = 10mA, f = 100MHz) O utput Capacitance (VCB = 20 Vdc, f = 1M Hz) hFE1 25 hFE2 40 hFE3 40 - - - V CE(sat) - - 500 mV VBE(sat) - - 90 0 mV fT 50 - - MHz Cob - - 3 pF hFE , DC CURRENT GAIN 120 100 80 60 40 20 0 0.1 1.4 1.2 1.0 0.8 0.6 0.4 0.2 00 0. 1 Typical Character.

Part

PZTA42

Description

NPN Silicon Planar Epitaxial Transistor



Feature


NPN Silicon Planar Epitaxial Transistor BASE 1 COLLECTOR 2, 4 3 EMITTER PZTA4 2 1. BASE 2.COLLECTOR 3.EMITTER 4.COLL ECTOR 1 2 3 SOT-223 4 ABSOLUTE MAXI MUM RATINGS (Ta=25 C) Rating Collector- Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current (DC) Total Device Disspation TA=25˚C J unction Temperature Storage, Temperatur e Symbol VCEO VCBO.
Manufacture

WEITRON

Datasheet
Download PZTA42 Datasheet




 PZTA42
NPN Silicon Planar Epitaxial Transistor
BASE
1
COLLECTOR
2, 4
3
EMITTER
PZTA42
1. BASE
2.COLLECTOR
3.EMITTER
4.COLLECTOR
1
2
3
SOT-223
4
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Total Device Disspation TA=25˚C
Junction Temperature
Storage, Temperature
Symbol
VCEO
VCBO
VEBO
IC(DC)
PD
Tj
Tstg
Device Marking
PZTA42=A42
Value
300
300
6
500
2
150
-55 to +150
Unit
V
V
V
mA
W
˚C
˚C
ELECTRICAL CHARACTERISTICS
Characteristics
Collector-Emitter Breakdown Voltage
(IC=1mA)
Collector-Base Breakdown Voltage
(IC=100µA)
Emitter-Base Breakdown Voltage
(IE=10 µA)
Collector-Emitter Cutoff Current
(VCB=300V)
Emitter-Base Cutoff Current
(VEB=6V)
Symbol Min
V(BR)CEO
300
V(BR)CBO
300
Typ
-
-
V(BR)EBO
6
-
ICBO - -
IEBO - -
Max
-
-
Unit
V
V
-V
100 nA
100 nA
WEITRON
http://www.weitron.com.tw
1/3
02-Jun-05




 PZTA42
PZTA42
ON CHARACTERISTICS
DC Current Gain
(VCE = 10V,IC = 1mA)
(VCE = 10V,IC = 10mA)
(VCE = 10V,IC = 30mA)
Collector-Emitter Saturation Voltages
(IC = 20mA, IB = 2mA)
Base-Emitter Saturation Voltages
(IC = 20mA, IB = 2mA)
DYNAMIC CHARACTERISTICS
Current-Gain—Bandwidth Product
(VCE = 20V, IC = 10mA, f = 100MHz)
Output Capacitance
(VCB = 20 Vdc, f = 1MHz)
hFE1 25 -
hFE2 40 -
hFE3 40 -
-
-
-
-
-
-
VCE(sat)
-
- 500 mV
VBE(sat)
-
- 900 mV
fT 50 - - MHz
Cob - - 3
pF
120
100
80
60
40
20
0
0.1
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00
0.1
Typical Characteristics
80
Tj= 125 ˚C
70
60
25 ˚C
50
40
-55 ˚C
30 Tj=25 ˚C
VCE=20V
20 f=100MHz
1.0 10
IC, COLLECTOR CURRENT (mA)
Figure .1 DC Current Gain
100
10
1.0
2.0 3.0 5.0 7.0 10
20 30 50 70 100
Ic, COLLECTOR CURRENT (mA)
Figure .2 Current-Gain-Bandwidth
1.0 10
IC, COLLECTOR CURRENT (mA)
Figure.3 "On"Voltages
100
VCE(sat)@25 ˚C, ICIB = 10
VCE(sat)@125 ˚C, ICIB =10
VCE(sat)@ -55 ˚C, ICIB=10
VBE(sat)@25 ˚C, ICIB = 10
VBE(sat)@125 ˚C, ICIB =10
VBE(sat)@ -55 ˚C, ICIB =10
VBE(on)@25 ˚C, VCE = 10V
VBE(on)@125 ˚C, VCE = 10V
VBE(on)@-55 ˚C, VCE = 10V
WEITRON
http://www.weitron.com.tw
2/3
02-Jun-05




 PZTA42
PZTA42
SOT-223 Outline Dimensions
A
F
4
S
1 23
B
L
G
H
D
C
M
unit:mm
MILLIMETERS
DIM MIN MAX
A 6.30 6.70
B 3.30 3.70
C 1.50 1.75
D 0.60 0.89
F 2.90 3.20
G 2.20 2.40
H 0.020 0.100
J 0.24 0.35
J K 1.50 2.00
L 0.85 1.05
K
M 0 10
S 6.70 7.30
WEITRON
http://www.weitron.com.tw
3/3
02-Jun-05



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