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SCHOTTKY RECTIFIER. SDB10200PI Datasheet

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SCHOTTKY RECTIFIER. SDB10200PI Datasheet
















SDB10200PI RECTIFIER. Datasheet pdf. Equivalent













Part

SDB10200PI

Description

DUAL COMMON CATHODE SCHOTTKY RECTIFIER



Feature


SDB10200PI Schottky Barrier Rectifier DU AL COMMON CATHODE SCHOTTKY RECTIFIER F eatures  Low forward voltage drop an d leakage current  Low power loss an d High efficiency  High surge capabi lity  Dual common cathode rectifier  Full lead (Pb)-free and RoHS compli ant device 123 12 3 Pin 1, 3 : Anode Pin 2 : Cathode Applications  Powe r supply - Output rectificatio.
Manufacture

KODENSHI

Datasheet
Download SDB10200PI Datasheet


KODENSHI SDB10200PI

SDB10200PI; n  Converter  Free-wheeling diode  Reverse battery protection  Powe r inverters TO-220F-3L Product Charac teristics IF(AV) VRRM VFM at 125℃ 2 X 5A 200V 0.72V (Typ.) IFSM 120A Descr iption The SDB10200PI has two schottky barriers arranged in a common cathode c onfiguration. Typical applications are in switching power supplies, converters , free-wheeling diodes, and .


KODENSHI SDB10200PI

reverse battery protection. Ordering In formation Device SDB10200PI Marking Co de SDB10200PI Package TO-220F-3L Pack aging Tube Marking Information AUK = Manufacture Logo ∆ = Control Code of Manufacture YMDD = Date Code Marking -. Y = Year Code -. M = Monthly Code -. D = Daily Code SDB10200PI = Specific Dev ice Code KSD-D0O013-002 1 Absolute M aximum Ratings (Limi.


KODENSHI SDB10200PI

ting Values) Characteristic Maximum rep etitive reverse voltage Maximum working peak reverse voltage Maximum DC blocki ng voltage Maximum average forward rec tified current per diode total device Peak forward surge current 8.3ms singl e half sine-wave superimposed on rated load per diode Storage temperature ran ge Maximum operating junction temperatu re SDB10200PI Sy.





Part

SDB10200PI

Description

DUAL COMMON CATHODE SCHOTTKY RECTIFIER



Feature


SDB10200PI Schottky Barrier Rectifier DU AL COMMON CATHODE SCHOTTKY RECTIFIER F eatures  Low forward voltage drop an d leakage current  Low power loss an d High efficiency  High surge capabi lity  Dual common cathode rectifier  Full lead (Pb)-free and RoHS compli ant device 123 12 3 Pin 1, 3 : Anode Pin 2 : Cathode Applications  Powe r supply - Output rectificatio.
Manufacture

KODENSHI

Datasheet
Download SDB10200PI Datasheet




 SDB10200PI
SDB10200PI
Schottky Barrier Rectifier
DUAL COMMON CATHODE SCHOTTKY RECTIFIER
Features
Low forward voltage drop and leakage current
Low power loss and High efficiency
High surge capability
Dual common cathode rectifier
Full lead (Pb)-free and RoHS compliant device
123
12 3
Pin 1, 3 : Anode
Pin 2 : Cathode
Applications
Power supply - Output rectification
Converter
Free-wheeling diode
Reverse battery protection
Power inverters
TO-220F-3L
Product Characteristics
IF(AV)
VRRM
VFM at 125
2 X 5A
200V
0.72V (Typ.)
IFSM 120A
Description
The SDB10200PI has two schottky barriers arranged in a common cathode configuration. Typical
applications are in switching power supplies, converters, free-wheeling diodes, and reverse battery
protection.
Ordering Information
Device
SDB10200PI
Marking Code
SDB10200PI
Package
TO-220F-3L
Packaging
Tube
Marking Information
AUK = Manufacture Logo
= Control Code of Manufacture
YMDD = Date Code Marking
-. Y = Year Code
-. M = Monthly Code
-. D = Daily Code
SDB10200PI = Specific Device Code
KSD-D0O013-002
1




 SDB10200PI
Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per diode
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
SDB10200PI
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Tstg
Tj
Value
Unit
200 V
5
A
10
120 A
-45to +150
150
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
per diode
total device
Symbol
Rth(j-c)
Value
4.0
3.6
Unit
/W
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Test Condition
Min. Typ.
Peak forward voltage drop
VFM (1)
IFM = 5A
Tj=25
Tj=125
- 0.85
- 0.72
Reverse leakage current
IRM (1)
VR = VRRM
Tj=25
--
Tj=125- -
Junction capacitance
Cj VR = 1VDC, f=1MHz
- 150
Note : (1) Pulse test : tP380 , Duty cycle2%
To evaluate the conduction losses use the following equation: PF = 0.68 IF(AV) + 0.032 IF2(RMS)
IFM
Max.
0.95
0.76
10
10
-
Unit
V
V
uA
mA
pF
2 IF(AV)
IF(AV)
Forward Voltage : VFM = Vto + rd IFM
rd
Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS)
VFM
Vto
KSD-D0O013-002
2




 SDB10200PI
Rating and Characteristic Curves
Fig. 1) Typical Forward Characteristics (Per diode)
SDB10200PI
Fig. 2) Typical Reverse Characteristics (Per diode)
Fig. 3) Maximum Forward Derative Curve
Fig. 4) Forward Power Dissipation (Per diode)
Fig. 5) Maximum Non-Repetitive Peak Forward
Surge Current (Per diode)
Fig. 6) Typical Junction Capacitance (Per diode)
KSD-D0O013-002
3




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