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SDBS115

LGE

Schottky Barrier Bridge Rectifiers

SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carr...



SDBS115

LGE


Octopart Stock #: O-1008622

Findchips Stock #: 1008622-F

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Description
SDB(S)12 - SDB(S)115 1.0 AMP. Schottky Barrier Bridge Rectifiers DB Features Metal to silicon rectifier, majority carrier conduction Low forward voltage drop Easy pick and place High surge current capability Plastic material used carriers Underwriters Laboratory Classification 94V-0 Epitaxial construction High temperature soldering: 260oC/ 10 seconds at terminals Mechanical Data Case: Molded plastic Terminals: Pure tin plated, lead free. Polarity: Indicated by cathode band .047(1.20) .040(1.02) .205(5.2) .195(5.0) DBS .335(8.51) .320(8.13) 450 .013(0.33) .0088(0.22) .404(10.3) .386(9.80) .255(6.5) .245(6.2) .130(3.30) .120(3.05) .060(1.53) .040(1.02) .013(0.33) .003(0.076) Dimensions in inches and (millimeters) Maximum Ratings and Electrical Characteristics Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol SDB SDB SDB SDB SDB SDB SDB SDB Units 12 13 14 15 16 19 110 115 SDBS SDBS SDBS SDBS SDBS SDBS SDBS SDBS 12 13 14 15 16 19 110 115 Maximum Recurrent Peak Reverse Voltage VRRM 20 30 40 50 60 90 100 150 V Maximum RMS Voltage VRMS 14 21 28 35 42 63 70 105 V Maximum DC Blocking Voltage Maximum Average Forward Rectified Current at TL(See Fig. 1) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave Superimposed on Rated Load (JEDEC method ) VDC I(AV) IFSM 20 30 40 50 60 90 100 150 1.0 30 V A A Maximum Instantaneous Forw...




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