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STD9NM60N. 9NM60N Datasheet

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STD9NM60N. 9NM60N Datasheet






9NM60N STD9NM60N. Datasheet pdf. Equivalent




9NM60N STD9NM60N. Datasheet pdf. Equivalent





Part

9NM60N

Description

STD9NM60N



Feature


STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP , DPAK MDmesh™ II Power MOSFET Featu res Order codes STD9NM60N STF9NM60N ST P9NM60N VDSS (@Tjmax) RDS(on) max. 6 50 V < 0.745 Ω ID 6.5 A ■ 100% ava lanche tested ■ Low input capacitance and gate charge ■ Low gate input res istance Application Switching applicat ions Description This serie.
Manufacture

STMicroelectronics

Datasheet
Download 9NM60N Datasheet


STMicroelectronics 9NM60N

9NM60N; s of devices is realized with the second generation of MDmesh™ technology. Th is revolutionary Power MOSFET associate s a new vertical structure to the compa ny’s strip layout to yield one of the world’s lowest on-resistance and gat e charge. It is therefore suitable for the most demanding high efficiency conv erters. 3 2 1 TO-220FP 3 2 1 TO-220 3 1 DPAK Figure 1. Inte.


STMicroelectronics 9NM60N

rnal schematic diagram $ ' 3 T able 1. Device summary Order codes STD9 NM60N STF9NM60N STP9NM60N Marking 9NM6 0N Packages DPAK TO-220FP TO-220 !- V Packaging Tape and reel Tube Oct ober 2010 Doc ID 18063 Rev 1 1/16 www .st.com 16 Contents Contents STD9NM6 0N, STF9NM60N, STP9NM60N 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . ..


STMicroelectronics 9NM60N

. . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Elect rical characteristics (curves) ....... ..................... 6 3 Test circuit s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . .

Part

9NM60N

Description

STD9NM60N



Feature


STD9NM60N STF9NM60N, STP9NM60N N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP , DPAK MDmesh™ II Power MOSFET Featu res Order codes STD9NM60N STF9NM60N ST P9NM60N VDSS (@Tjmax) RDS(on) max. 6 50 V < 0.745 Ω ID 6.5 A ■ 100% ava lanche tested ■ Low input capacitance and gate charge ■ Low gate input res istance Application Switching applicat ions Description This serie.
Manufacture

STMicroelectronics

Datasheet
Download 9NM60N Datasheet




 9NM60N
STD9NM60N
STF9NM60N, STP9NM60N
N-channel 600 V, 0.63 Ω, 6.5 A TO-220, TO-220FP, DPAK
MDmesh™ II Power MOSFET
Features
Order codes
STD9NM60N
STF9NM60N
STP9NM60N
VDSS
(@Tjmax)
RDS(on)
max.
650 V < 0.745 Ω
ID
6.5 A
100% avalanche tested
Low input capacitance and gate charge
Low gate input resistance
Application
Switching applications
Description
This series of devices is realized with the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
2
1
TO-220FP
3
2
1
TO-220
3
1
DPAK
Figure 1. Internal schematic diagram
$
'
3
Table 1. Device summary
Order codes
STD9NM60N
STF9NM60N
STP9NM60N
Marking
9NM60N
Packages
DPAK
TO-220FP
TO-220
!-V
Packaging
Tape and reel
Tube
October 2010
Doc ID 18063 Rev 1
1/16
www.st.com
16




 9NM60N
Contents
Contents
STD9NM60N, STF9NM60N, STP9NM60N
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves)
............................ 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
2/16 Doc ID 18063 Rev 1




 9NM60N
STD9NM60N, STF9NM60N, STP9NM60N
1 Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID
ID
IDM (2)
PTOT
VISO
dv/dt (3)
Drain-source voltage (VGS = 0)
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1 s;TC=25 °C)
Peak diode recovery voltage slope
Tstg Storage temperature
Tj Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. ISD 6.5 A, di/dt 400 A/µs, VDD = 80% V(BR)DSS
Table 3. Thermal data
Symbol
Parameter
Rthj-case
Rthj-pcb (1)
Thermal resistance junction-case max
Thermal resistance junction-pcb minimum
footprint
Rthj-amb
Tl
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
1. When mounted on 1inch² FR-4 board, 2 oz Cu
Value
Unit
TO-220, DPAK TO-220FP
600
± 25
6.5
4
26
70
6.5 (1)
4 (1)
26 (1)
25
V
V
A
A
A
W
2500
V
15
- 55 to 150
150
V/ns
°C
°C
Value
Unit
DPAK TO-220 TO-220FP
1.79 5 °C/W
50 °C/W
62.5 °C/W
300 °C
Table 4. Avalanche characteristics
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
IAR (pulse width limited by Tj Max)
Single pulse avalanche energy
EAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
2.5
115
Unit
A
mJ
Doc ID 18063 Rev 1
3/16



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