RCR1514ESH

N-Channel Enhancement Mode Field Effect Transistor RCR1514ESH Features ·Low On-Resistance Pin Configurations ①:G ·Fast Switching Speed ②:S ·Low-voltage drive ·Easily designed drive circuits ·ESD Protected ③:D Package Information Absolute Maximum Ratings @TA=25℃ unless otherwise noted Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS YKKJPD-V3.1 Ratings 60 ±20 Unit V V 1 /4 Drain Current (Continuous) TA=25°C Drain Current (Pulse) Power Dissipation TA=25°C Operating Temperature/ Storage Temperature *1 Pw ≦10 μs, Duty cycle ≦1 % *2 When mounted on a 1*0.75*0.062 inch glass epoxy board ID IDM*1 PD*2 TJ//TSTG Electrical Characteristics @TA=25℃ unless otherwise noted Parameter Symbol Test Conditions Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID=10μA Zero Gate Voltage Drain Current IDSS VDS = 60V, VGS = 0V Gate Threshold Voltage VGS(th) VDS=3V, IDS=100μA Gate Leakage Current IGSS VGS=±20V, VDS=0V Drain-Source On-state Resistance RDS(on) VGS =4V, ID=10mA VGS =2.5V, ID=1mA Forward Transconductance gFS* VDS=3V, ID=10mA Switching Turn-on Delay Time td ( on ) * ID=10mA,VDS = 5V, Turn-off Delay Time td( off ) * VGS=5V,RL=500Ω, RG=10Ω Dynamic Input Capacitance Ciss Output Capacitance Coss VGS=0V,VDS=5V,f=1.0MHz Reverse Transfer Capacitance Crss *Pw ≦ 300 μs, Duty cycle ≦ 1% Typical Performance Characteristics RCR1514ESH 200 800 200 -55~150 mA mA mW ℃ Min Typ Max Unit 60 -- -- V -- -- 1 μA ...