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NPN Transistor. KTC3875 Datasheet

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NPN Transistor. KTC3875 Datasheet






KTC3875 Transistor. Datasheet pdf. Equivalent




KTC3875 Transistor. Datasheet pdf. Equivalent





Part

KTC3875

Description

NPN Transistor



Feature


Plastic-Encapsulate Transistors FEATURE S • High hFE • Low noise • Comple mentary to KTA1504 KTC3875(NPN) Maxim um Ratings (TA=25 Parameter Collector-B ase Voltage Collector-Emitter Voltage E mitter-Base Voltage Collector Current - Continuous Collector Power dissipation Junction Temperature Storage Temperatur e unless otherwise noted) Symbol Val ue VCBO VCEO VEBO IC PC.
Manufacture

HOTTECH

Datasheet
Download KTC3875 Datasheet


HOTTECH KTC3875

KTC3875; TJ Tstg 60 50 5 0.15 0.15 150 -55to +1 50 Unit V V V A W 1. BASE 2. EMITTER 3. COLLECTO SOT-23 ELECTRICAL CHARACT ERISTICS ( @ Ta=25 unless otherwise spe cified) Parameter Symbol Test condit ions Collector-base breakdown voltage VCBO IC=100μA,IE=0 Collector-emitte r breakdown voltage VCEO IC= 1mA, IB= 0 Emitter-base breakdown voltage VEBO IE= 100μA, IC=0 .


HOTTECH KTC3875

Collector cut-off current ICBO VCB= 60V , IE=0 Emitter cut-off current IEBO V EB= 5V, IC=0 DC current gain hFE VCE= 6V, IC= 2mA Collector-emitter saturat ion voltage VCE(sat) IC=100mA, IB= 10m A base-emitter saturation voltage VBE (sat) IC=100mA, IB= 10mA Transition fr equency Collector output capacitance f T VCE=10V, IC= 1mA Cob VCB=10V,IE=0,f=1 MHZ Noise figure .


HOTTECH KTC3875

NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ Mi n Typ Max Unit 60 V 50 V 5V 0.1 μA 0.1 μA 70 700 0.1 0.25 V 1V 80 MHz 2.0 3.5 pF 1.0 10 dB CLASSIFIC ATION OF hFE Rank Range Marking O 70-1 40 ALO Y 120-240 ALY GR 200-400 ALG BL 350-700 ALL GUANGDONG HOTTECH INDUS TRIAL CO,. LTD. Page:P2-P1 KTC3875 Ty pical Characteristics Plastic-Encapsul ate Transistors GUANG.

Part

KTC3875

Description

NPN Transistor



Feature


Plastic-Encapsulate Transistors FEATURE S • High hFE • Low noise • Comple mentary to KTA1504 KTC3875(NPN) Maxim um Ratings (TA=25 Parameter Collector-B ase Voltage Collector-Emitter Voltage E mitter-Base Voltage Collector Current - Continuous Collector Power dissipation Junction Temperature Storage Temperatur e unless otherwise noted) Symbol Val ue VCBO VCEO VEBO IC PC.
Manufacture

HOTTECH

Datasheet
Download KTC3875 Datasheet




 KTC3875
Plastic-Encapsulate Transistors
FEATURES
High hFE
Low noise
Complementary to KTA1504
KTC3875(NPN)
Maximum Ratings (TA=25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power dissipation
Junction Temperature
Storage Temperature
unless otherwise noted)
Symbol
Value
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
60
50
5
0.15
0.15
150
-55to +150
Unit
V
V
V
A
W
1. BASE
2. EMITTER
3. COLLECTO
SOT-23
ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
VCBO
IC=100μA,IE=0
Collector-emitter breakdown voltage
VCEO
IC= 1mA, IB=0
Emitter-base breakdown voltage
VEBO
IE= 100μA, IC=0
Collector cut-off current
ICBO VCB= 60V, IE=0
Emitter cut-off current
IEBO VEB= 5V, IC=0
DC current gain
hFE VCE= 6V, IC= 2mA
Collector-emitter saturation voltage
VCE(sat) IC=100mA, IB= 10mA
base-emitter saturation voltage
VBE(sat) IC=100mA, IB= 10mA
Transition frequency
Collector output capacitance
fT VCE=10V, IC= 1mA
Cob VCB=10V,IE=0,f=1MHZ
Noise figure
NF VCE=6V,IC=0.1mA,Rg=10kΩ,f=1KHZ
Min Typ Max Unit
60 V
50 V
5V
0.1 μA
0.1 μA
70 700
0.1 0.25
V
1V
80 MHz
2.0 3.5
pF
1.0 10
dB
CLASSIFICATION OF hFE
Rank
Range
Marking
O
70-140
ALO
Y
120-240
ALY
GR
200-400
ALG
BL
350-700
ALL
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P1




 KTC3875
KTC3875 Typical Characteristics
Plastic-Encapsulate Transistors
GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.
Page:P2-P2







Recommended third-party KTC3875 Datasheet






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