B5819WS

BL Galaxy Electrical Production specification Schottky Barrier Diode FEATURES z Extremely low VF. z Low stored change,majority carrier conduction. z Low power loss/high efficient Pb Lead-free B5817WS-B5819WS APPLICATIONS z For Use In Low Voltage, High Frequency Inverters. z Free Wheeling, And Polarity Protection Applications. ORDERING INFORMATION Type No. Marking B5817WS B5818WS B5819WS SJ SK SL SOD-323 Package Code SOD-323 SOD-323 SOD-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Parameter symbol B5817WS B5818WS B5819WS Unit Non-Repetitive Peak reverse voltage VRM 20 30 40 V Peak repetitive Peak reverse voltage VRRM Working Peak Reverse voltage VRWM 20 30 40 V DC Reverse Voltage VR RMS Reverse Voltage VR(RMS) 14 21 28 V Average Rectified output Current Io 1 A Peak forward surge current@=8.3ms IFSM 25 A Repetitive Peak Forward Current IFRM 625 mA Power Dissipation Pd 250 mW Thermal Resistance Junction to Ambient RθJA 500 ℃/W Storage temperature TSTG -65~+150 ℃ Document number: BL/SSSKB009 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification Schottky Barrier Diode B5817WS-B5819WS ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Reverse breakdown voltage Symbol Test Condition IR=1mA V(BR) Reverse voltage leakage current IR Forward voltage Diode capacitance VF CD VR=20V VR=30V VR=40V B5817WS B5818WS B5819WS VR=4V,f=1MHz MIN MAX UNIT B5817WS B5818WS B5819WS B...