BL Galaxy Electrical
Production specification
Schottky Barrier Diode
FEATURES
z Extremely low VF. z Low stored change,...
BL Galaxy Electrical
Production specification
Schottky Barrier Diode
FEATURES
z Extremely low VF. z Low stored change,majority carrier
conduction. z Low power loss/high efficient
Pb
Lead-free
B5817WS-B5819WS
APPLICATIONS
z For Use In Low Voltage, High Frequency Inverters. z Free Wheeling, And Polarity Protection Applications.
ORDERING INFORMATION
Type No.
Marking
B5817WS B5818WS B5819WS
SJ SK SL
SOD-323
Package Code SOD-323 SOD-323 SOD-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Parameter
symbol B5817WS B5818WS B5819WS Unit
Non-Repetitive Peak reverse voltage
VRM
20
30
40
V
Peak repetitive Peak reverse voltage
VRRM
Working Peak Reverse voltage
VRWM
20
30
40
V
DC Reverse Voltage
VR
RMS Reverse Voltage
VR(RMS)
14
21
28
V
Average Rectified output Current
Io 1
A
Peak forward surge current@=8.3ms
IFSM
25
A
Repetitive Peak Forward Current
IFRM
625
mA
Power Dissipation
Pd 250
mW
Thermal Resistance Junction to Ambient RθJA
500
℃/W
Storage temperature
TSTG
-65~+150
℃
Document number: BL/SSSKB009 Rev.A
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BL Galaxy Electrical
Production specification
Schottky Barrier Diode
B5817WS-B5819WS
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Reverse breakdown voltage
Symbol Test Condition IR=1mA
V(BR)
Reverse voltage leakage current IR
Forward voltage Diode capacitance
VF CD
VR=20V VR=30V VR=40V B5817WS
B5818WS
B5819WS
VR=4V,f=1MHz
MIN MAX UNIT
B5817WS B5818WS B5819WS B...