Document
DATA SHEET
BZX55-C SERIES
AXIAL LEAD ZENER DIODES
VOLTAGE 2.4 to 47 Volts
POWER
500 mWatts DO-35
FEATURES
• Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available :
Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above
MECHANICAL DATA
• Case: Molded glass DO-35 • Terminals: Solderable per MIL-STD-202, Method 208 • Polarity: See Diagram Below • Approx. Weight: 0.13 grams • Mounting Position: Any • Ordering information: Suffix :” -35” to order DO-35 Package • Packing information
B - 2K per Bulk box T/R - 10K per 13" plastic Reel T/B - 5K per horiz. tape & Ammo box
1.02(26.0)MIN.
.153(3.9)MAX.
1.02(26.0)MIN.
Unit: inch (mm) .020(0.52)TYP.
.079(2.0)MAX.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TJ =25°C unless otherwise noted)
Parameter Power Dissipation at Tamb = 25 OC
Symbol PTOT
Junction Temperature
TJ
Storage Temperature Range
TS
Valid provided that leads at a distance of 8mm from case are kept at ambient temperature.
Value 500 175 -65 to +175
Parameter Thermal Resistance Junction to Ambient Air
Symbol
RthA
Min. --
Forward Voltage at IF = 100mA
VF --
Valid provided that leads at a distance of 10 mm from case are kept at ambient temperature.
Typ.
---
Max. 0.3
1
Units mW OC OC
Units K/mW
V
STAD-SEP.14.2004
PAGE . 1
Part Number
BZX55-C2V4 BZX55-C2V7 BZX55-C3V0 BZX55-C3V3 BZX55-C3V6 BZX55-C3V9 BZX55-C4V3 BZX55-C4V7 BZX55-C5V1 BZX55-C5V6 BZX55-C6V2 BZX55-C6V8 BZX55-C7V5 BZX55-C8V2 BZX55-C9V1 BZX55-C10 BZX55-C11 BZX55-C12 BZX55-C13 BZX55-C15 BZX55-C16 BZX55-C18 BZX55-C20 BZX55-C22 BZX55-C24 BZX55-C27 BZX55-C30 BZX55-C33 BZX55-C36 BZX55-C39 BZX55-C43 BZX55-C47
Nominal Zener Voltage
Nom. V 2.4
V Z @ IZT
Min. V 2.28
Max. V 2.56
2.7
2.50
2.90
3.0
2.80
3.20
3.3
3.10
3.50
3.6
3.40
3.80
3.9
3.70
4.10
4.3
4.00
4.60
4.7 4.40 5.00
5.1 4.80 5.40
5.6
5.20
6.00
6.2
5.80
6.60
6.8
6.40
7.20
7.5
7.00
7.90
8.2
7.70
8.70
9.1 8.50 9.60
10.0
9.40
10.60
11.0
10.40
11.60
12.0
11.40
12.70
13.0
12.40
14.10
15.0
13.80
15.60
16.0
15.30
17.10
18.0
16.80
19.10
20.0
18.80
21.20
22.0
20.80
23.30
24.0
22.80
25.60
27.0
25.10
28.90
30.0
28.00
32.00
33.0
31.00
35.00
36.0
34.00
38.00
39.0
37.00
41.00
43.0
40.00
46.00
47.0
44.00
50.00
Max. Zener Impedance
ZZT @ IZT
Ω mA 85 5.0 85 5.0 85 5.0 85 5.0 85 5.0 85 5.0 75 5.0 60 5.0 35 5.0 25 5.0 10 5.0 8 5.0 7 5.0 7 5.0 10 5.0 15 5.0 20 5.0 20 5.0 26 5.0 30 5.0 40 5.0 50 5.0 55 5.0 55 5.0 80 5.0 80 5.0 80 5.0 80 5.0 80 5.0 90 2.5 90 2.5 110 2.5
ZZK @ IZK
Ω mA 600 1.0 600 1.0 600 1.0 600 1.0 600 1.0 600 1.0 600 1.0 600 1.0 550 1.0 450 1.0 200 1.0 150 1.0 50 1.0 50 1.0 50 1.0 70 1.0 70 1.0 90 1.0 110 1.0 110 1.0 170 1.0 170 1.0 220 1.0 220 1.0 220 1.0 220 1.0 220 1.0 220 1.0 220 1.0 500 1.0 600 1.0 700 1.0
Max Reverse Leakage Current
IR @ VR
uA V 50 1.0 10 1.0 4.0 1.0 2.0 1.0 2.0 1.0 2.0 1.0 1.0 1.0 0.5 1.0 0.1 1.0 0.1 1.0 0.1 2.0 0.1 3.0 0.1 5.0 0.1 6.0 0.1 7.0 0.1 7.5 0.1 8.5 0.1 9.0 0.1 10.0 0.1 11.0 0.1 12.0 0.1 14.0 0.1 15.0 0.1 17.0 0.1 18.0 0.1 20.0 0.1 22.0 0.1 24.0 0.1 27.0 0.1 30.0 0.1 33.0 0.1 36.0
marking code
55C2V4 55C2V7 55C3V0 55C3V3 55C3V6 55C3V9 55C4V3 55C4V7 55C5V1 55C5V6 55C6V2 55C6V8 55C7V5 55C8V2 55C9V1 55C10V 55C11V 55C12V 55C13V 55C15V 55C16V 55C18V 55C20V 55C22V 55C24V 55C27V 55C30V 55C33V 55C36V 55C39V 55C43V 55C47V
STAD-SEP.14.2004
PAGE . 2
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
RthJA –Therm.Resist.Junction/ Ambient ( K/W)
500
400
300 ll
200
100
0 0
95 9611
TL=constant
5 10 15 l – Lead Length ( mm )
20
Fig. 1 Thermal Resistance vs. Lead Length
VZtn – RelativeVoltageChange
1.3 VZtn=VZt/VZ(25°C)
1.2
TKVZ=10 x 10–4/K 8 x 10–4/K
1.1 6 x 10–4/K
4 x 10–4/K 2 x 10–4/K
1.0 0
–2 x 10–4/K
–4 x 10–4/K
0.9
0.8 –60
95 9599
0 60 120 180 240 Tj – Junction Temperature (°C )
Fig. 4 Typical Change of Working Voltage vs. Junction Temperature
TK VZ –Temperature Coefficient of VZ ( 10–4 /K)
600
tPot –Total Power Dissipation ( mW)
500
400
300
200
100
0 0
95 9602
40 80 120 160 200 Tamb – Ambient Temperature(°C )
Fig. 2 Total Power Dissipation vs. Ambient Temperature
15
10
5
IZ=5mA 0
–5 0
95 9600
10 20 30 40 VZ – Z-Voltage ( V )
50
Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage
VZ –VoltageChange( mV )
1000 Tj=25°C
100
10
IZ=5mA
1 0
95 9598
5 10 15 20 VZ – Z-Voltage ( V )
25
Fig. 3 Typical Change of Working Voltage under Operating Conditions at Tamb=25°C
200
CD – Diode Capacitance ( pF )
150 VR=2V Tj=25°C
100
50
0 0
95 9601
5 10 15 20 VZ – Z-Voltage ( V )
Fig. 6 Diode Capacitance vs. Z-Voltage
25
STAD-SEP.14.2004
PAGE . 3
100
IF – Forward Current ( mA)
10
Tj=25°C 1
0.1
0.01
0.001 0
95 9605
0.2 0.4 0.6 0.8 VF – Forward Voltage ( V )
1.0
Fig. 7 Forward Current vs. Forward Voltage
50
40
Ptot=500mW Tamb=25°C
30
IZ – Z-Current ( mA)
20
10
0 15
95 9607
20 25 30 VZ – Z-Voltage ( V )
Fig. 9 Z-.