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W13NK80Z Dataheets PDF



Part Number W13NK80Z
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STW13NK80Z
Datasheet W13NK80Z DatasheetW13NK80Z Datasheet (PDF)

STW13NK80Z N-channel 800V - 0.53Ω - 12A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW13NK80Z VDSS 800V RDS(on) <0.65Ω ID pW 12A 230W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances t(s)■ Very good manufacturing repeatibility ucDescription rodThe SuperMESH™ series is obtained through an Pextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to tepushing on-re.

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STW13NK80Z N-channel 800V - 0.53Ω - 12A - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STW13NK80Z VDSS 800V RDS(on) <0.65Ω ID pW 12A 230W ■ Extremely high dv/dt capability ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances t(s)■ Very good manufacturing repeatibility ucDescription rodThe SuperMESH™ series is obtained through an Pextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to tepushing on-resistance significantly down, special lecare is taken to ensure a very good dv/dt ocapability for the most demanding applications. bsSuch series complements ST full range of high voltage MOSFETs including revolutionary - OMDmesh™ products. t(s)Applications uc■ Switching application TO-247 Internal schematic diagram te ProdOrder codes olePart number ObsSTW13NK80Z Marking W13NK80Z Package TO-247 Packaging Tube October 2006 Rev 4 1/14 www.st.com 14 Contents Contents STW13NK80Z 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Obsolete Product(s) - Obsolete Product(s)5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STW13NK80Z 1 Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 800 V VGS Gate- source voltage ± 30 V ID Drain current (continuous) at TC = 25°C 12 A ID IDM(1) Drain current (continuous) at TC = 100°C Drain current (pulsed) 7.6 48 A A Ptot Total dissipation at TC = 25°C 230 W Derating Factor 1.85 W/°C EAS (2) Single pulse avalanche energy )Tstg Storage temperature t(sTj Max. operating junction temperature uc1. Pulse width limited by safe operating area. d2. ISD ≤12A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX. 4.5 -55 to 150 mJ °C ProTable 2. Thermal data teRthj-case Thermal resistance junction-case max leRthj-amb Thermal resistance junction-ambient max bsoTJ Maximum lead temperature for soldering purpose 0.54 °C/W 50 °C/W 300 °C - OTable 3. Avalanche characteristics t(s)Symbol Parameter cAvalanche current, repetitive or not-repetitive duIAR (pulse width limited by Tj max) roSingle pulse avalanche energy PEAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max value 12 450 Unit A mJ leteTable 4. Gate-source zener diode so Symbol Parameter Test conditions Ob BVGSO Gate-source breakdown voltage Igs=± 1mA (open drain) Min. Typ. Max. Unit 30 V 3/14 Electrical ratings STW13NK80Z 1.1 Protection features of gate-to-source zener diodes The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. Obsolete Product(s) - Obsolete Product(s) 4/14 STW13NK80Z 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit Drain-source V(BR)DSS breakdown voltage ID = 1mA, VGS =0 800 V IDSS Zero gate voltage drain current (VGS = 0) VDS = max rating VDS = max rating, TC = 125°C 1 µA 50 µA IGSS Gate-body leakage current (VDS = 0) VGS = ± 20V ±10 µA VGS(th) t(s)RDS(on) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 100µA VGS = 10V, ID = 6A 3 3.75 4.5 0.53 0.65 V Ω ducTable 6. roSymbol Dynamic Parameter Test conditions Min. Typ. Max. Unit te Pgfs (1) Forward transconductance VDS = 15V, ID = 6A 11 S oleCiss bsCoss OCrss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 3480 312 67 pF pF pF t(s) -Coss (2) eq Equivalent output capacitance VGS = 0V, VDS = 0V to 720V 150 pF ctd(on) utr rodtd(off) tf te PQg Qgs le Qgd Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge VDD = 400V, ID = 6A RG = 4.7Ω VGS = 10V (see Figure 13) VDD = 640V, ID = 12A, VGS = 10V, RG = 4.7Ω (see Figure 14) 33 ns 22 ns 95 ns 55 ns 115 155 nC 31 nC 51 nC so 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. b 2. Coss eq. is define.


BZX55-C47 W13NK80Z C5213


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