Document
STW13NK80Z
N-channel 800V - 0.53Ω - 12A - TO-247 Zener-protected SuperMESH™ Power MOSFET
General features
Type STW13NK80Z
VDSS 800V
RDS(on) <0.65Ω
ID pW 12A 230W
■ Extremely high dv/dt capability
■ 100% avalanche tested
■ Gate charge minimized ■ Very low intrinsic capacitances
t(s)■ Very good manufacturing repeatibility ucDescription rodThe SuperMESH™ series is obtained through an Pextreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
tepushing on-resistance significantly down, special lecare is taken to ensure a very good dv/dt ocapability for the most demanding applications. bsSuch series complements ST full range of high
voltage MOSFETs including revolutionary
- OMDmesh™ products. t(s)Applications uc■ Switching application
TO-247
Internal schematic diagram
te ProdOrder codes olePart number
ObsSTW13NK80Z
Marking W13NK80Z
Package TO-247
Packaging Tube
October 2006
Rev 4
1/14
www.st.com
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Contents
Contents
STW13NK80Z
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Obsolete Product(s) - Obsolete Product(s)5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STW13NK80Z
1 Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS Drain-source voltage (VGS = 0)
800 V
VGS Gate- source voltage
± 30 V
ID Drain current (continuous) at TC = 25°C 12 A
ID IDM(1)
Drain current (continuous) at TC = 100°C Drain current (pulsed)
7.6 48
A A
Ptot Total dissipation at TC = 25°C
230 W
Derating Factor
1.85 W/°C
EAS (2)
Single pulse avalanche energy
)Tstg Storage temperature
t(sTj Max. operating junction temperature
uc1. Pulse width limited by safe operating area.
d2. ISD ≤12A, di/dt ≤200A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.
4.5 -55 to 150
mJ °C
ProTable 2. Thermal data teRthj-case Thermal resistance junction-case max leRthj-amb Thermal resistance junction-ambient max bsoTJ Maximum lead temperature for soldering purpose
0.54 °C/W 50 °C/W 300 °C
- OTable 3. Avalanche characteristics
t(s)Symbol
Parameter
cAvalanche current, repetitive or not-repetitive duIAR (pulse width limited by Tj max)
roSingle pulse avalanche energy PEAS (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Max value 12 450
Unit A mJ
leteTable 4. Gate-source zener diode
so Symbol
Parameter
Test conditions
Ob BVGSO
Gate-source breakdown voltage
Igs=± 1mA (open drain)
Min. Typ. Max. Unit 30 V
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Electrical ratings
STW13NK80Z
1.1 Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components.
Obsolete Product(s) - Obsolete Product(s)
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STW13NK80Z
2 Electrical characteristics
Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source V(BR)DSS breakdown voltage
ID = 1mA, VGS =0
800
V
IDSS
Zero gate voltage drain current (VGS = 0)
VDS = max rating VDS = max rating, TC = 125°C
1 µA 50 µA
IGSS
Gate-body leakage current (VDS = 0)
VGS = ± 20V
±10 µA
VGS(th)
t(s)RDS(on)
Gate threshold voltage
Static drain-source on resistance
VDS = VGS, ID = 100µA VGS = 10V, ID = 6A
3
3.75 4.5 0.53 0.65
V Ω
ducTable 6. roSymbol
Dynamic Parameter
Test conditions
Min. Typ. Max. Unit
te Pgfs (1)
Forward transconductance
VDS = 15V, ID = 6A
11 S
oleCiss bsCoss OCrss
Input capacitance Output capacitance Reverse transfer capacitance
VDS = 25V, f = 1MHz, VGS = 0
3480 312 67
pF pF pF
t(s) -Coss
(2) eq
Equivalent output capacitance
VGS = 0V, VDS = 0V to 720V
150 pF
ctd(on) utr rodtd(off)
tf
te PQg Qgs
le Qgd
Turn-on delay time Rise time Turn-off delay time Fall time
Total gate charge Gate-source charge Gate-drain charge
VDD = 400V, ID = 6A RG = 4.7Ω VGS = 10V (see Figure 13)
VDD = 640V, ID = 12A, VGS = 10V, RG = 4.7Ω (see Figure 14)
33 ns 22 ns 95 ns 55 ns
115 155 nC 31 nC 51 nC
so 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. b 2. Coss eq. is define.