2SA1948

SMD Type Transistors PNP Transistors 2SA1948 SOT-89 ■ Features ● Collector Current Capability IC=-0.1A ● Collector Emitter Voltage VCEO=-120V ● Complementary to 2SC5213 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -120 -120 -5 -100 500 150 -55 to 150 Unit V mA mW ℃ Unit:mm 1.Base 2.Collector 3.Emitter ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage DC current gain Collector output capacitance Transition frequency Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -1 mA， RBE=∞ VEBO IE= -100μA， IC=0 ICBO VCB= -100 V , IE=0 IEBO VEB= -4V , IC=0 VCE(sat) IC=-50 mA, IB=-2.5mA VBE(sat) IC=-50 mA, IB=-2.5mA hFE VCE= -10V, IC= -10mA Cob VCB= -20V, IE= 0,f=1MHz fT VCE= -10V, IE= 10mA Min Typ Max Unit -120 -120 V -5 -100 -100 nA -0.6 V -1.2 150 800 3.5 pF 200 MHz ■ Classification of hfe Type Range Marking 2SA1948-E 150-300 AC*E 2SA1948-F 250-500 AC*F 2SA1948-G 400-800 AC*G www.kexin.com.cn 1 SMD Type ■ Typical Characterisitics PNP Transistors 2SA1948 Transistors ...