IXFT40N30Q

HiPerFETTM Power MOSFETs Q-Class Not for New Designs IXFH40N30Q IXFT40N30Q VDSS = 300V ID25 = 40A ≤RDS(on) 85mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 300 300 ± 20 ± 30 40 160 40 1.0 V V V V A A A J 5 300 -55 ... +150 150 -55 ... +150 300 260 1.13 / 10 4 6 V/ns W °C °C °C °C °C Nm/lb.in. g g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, ID = 250μA VGS(th) VDS = VGS, ID = 4mA IGSS VGS = ±20V, VDS = 0V IDSS VDS = VDSS, VGS= 0V TJ = 125°C RDS(on) VGS = 10V, ID = 0.5 ID25, Note 1 Characteristic Values Min. Typ. Max. 300 V 2.0 4.0 V ±100 nA 25 μA 1 mA 85 mΩ TO-268 (IXFT) G S D (Tab) TO-247 (IXFH) G DS D (Tab) G = Gate S = Source D = Drain Tab = Drain Features z International Standard Packages z Low Intrinsic Gate Resistance z Low Package Inductance z Fast Intrinsic Rectifier z Low RDS(on) and QG Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Converters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z Temperature and Lighting Controls ©...