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IXTN32P60P

IXYS

Power MOSFET

Description
Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTN32P60P VDSS ID25 = = ≤RDS(on) - 600V - 32A 350mΩ Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pul...


IXYS

IXTN32P60P

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