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C3678 Dataheets PDF



Part Number C3678
Manufacturers Sanken
Logo Sanken
Description 2SC3678
Datasheet C3678 DatasheetC3678 Datasheet (PDF)

2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3678 900 800 7 3(Pulse6) 1.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A .

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2SC3678 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics (Ta=25°C) External Dimensions MT-100(TO3P) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC3678 900 800 7 3(Pulse6) 1.5 80(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=800V VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz 2SC3678 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ Unit µA µA V V V MHz pF 20.0min 4.0max 19.9±0.3 4.0 2.0 1.8 5.0±0.2 15.6±0.4 9.6 4.8±0.2 2.0±0.1 a ø3.2±0.1 b 2 3 1.05 +0.2 -0.1 0.65 +0.2 -0.1 sTypical Switching Characteristics (Common Emitter) VCC RL IC VBB1 VBB2 IB1 (V) (Ω) (A) (V) (V) (A) 250 250 1 10 –5 0.15 IB2 (A) –0.5 ton (µs) 1max tstg (µs) 5max tf (µs) 1max 5.45±0.1 5.45±0.1 1.4 BCE Weight : Approx 6.0g a. Type No. b. Lot No. DC Current Gain hFE Collector Current IC(A) I C– V CE Characteristics (Typical) 3 500mA 400mA 300mA 200mA 2 100mA 1 IB=50mA 0 0 1 2 34 Collector-Emitter Voltage VCE(V) Collector-Emitter Saturation Voltage VCE(sat)(V) Base-Emitter Saturation Voltage VBE(sat)(V) VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical) (IC/IB=5) 1 –55˚C (Case Temp) 25˚C (Case Temp) 125˚C (Case Temp) VBE(sat) 0 0.02 VCE(sat) –55˚C ( 125˚C 0.05 0.1 0.5 1 Collector Current IC(A) 3 25˚CCase Temp) Collector Current IC(A) 125˚C (Case Temp) 25˚C (Case Temp) –55˚C (Case Temp) I C– V BE Temperature Characteristics (Typical) (VCE=4V) 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-Emittor Voltage VBE(V) h FE– I C Characteristics (Typical) 50 125˚C (VCE=4V) 25˚C –55˚C 10 5 0.01 0.05 0.1 0.5 Collector Current IC(A) 1 3 Switching Time ton•tstg•tf(µs) t on• t stg• t f– I C Characteristics (Typical) 8 5 VCC 250V IC:IB1:–IB2 =2:0.3:1Const. tstg 1 0.5 0.2 0.1 tf ton 0.5 1 Collector Current IC(A) 3 Transient Thermal Resistance θ j-a( ˚ C / W ) θ j-a– t Characteristics 3 1 0.5 0.3 1 5 10 50 100 Time t(ms) 500 1000 Safe Operating Area (Single Pulse) 10 5 100µs Reverse Bias Safe Operating Area 10 5 Pc–Ta Derating 80 60 Maximum Power Dissipation PC(W) Collector Current IC(A) Infinite heatsink With 1 0.5 Without Heatsink Natural Cooling 0.1 50 100 500 Collector-Emitter Voltage VCE(V) 1000 1 Without Heatsink 0.5 Natural Cooling L=3mH IB2=–1.0A Duty:less than 1% 0.1 50 100 500 Collector-Emitter Voltage VCE(V) 1000 40 20 Without Heatsink 3.5 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150 67 Collector Current IC(A) .


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