Document
2SC3678
Silicon NPN Triple Diffused Planar Transistor (High Voltage Switching Transistor) Application : Switching Regulator and General Purpose
sAbsolute maximum ratings (Ta=25°C) sElectrical Characteristics
(Ta=25°C) External Dimensions MT-100(TO3P)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg
2SC3678 900 800 7
3(Pulse6) 1.5
80(Tc=25°C) 150
–55 to +150
Unit V V V A A W °C °C
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
Conditions VCB=800V
VEB=7V IC=10mA VCE=4V, IC=1A IC=1A, IB=0.2A IC=1A, IB=0.2A VCE=12V, IE=–0.3A VCB=10V, f=1MHz
2SC3678 100max 100max 800min 10 to 30 0.5max 1.2max 6typ 50typ
Unit µA µA V
V V MHz pF
20.0min 4.0max
19.9±0.3 4.0 2.0
1.8 5.0±0.2
15.6±0.4 9.6
4.8±0.2 2.0±0.1
a ø3.2±0.1 b
2
3
1.05
+0.2 -0.1
0.65
+0.2 -0.1
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (A)
250 250
1
10 –5 0.15
IB2 (A)
–0.5
ton (µs)
1max
tstg (µs)
5max
tf (µs)
1max
5.45±0.1
5.45±0.1
1.4
BCE
Weight : Approx 6.0g
a. Type No.
b. Lot No.
DC Current Gain hFE
Collector Current IC(A)
I C– V CE Characteristics (Typical)
3 500mA
400mA
300mA
200mA 2
100mA 1 IB=50mA
0 0 1 2 34 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V) Base-Emitter Saturation Voltage VBE(sat)(V)
VCE(sat),VBE(sat)–IC Temperature Characteristics (Typical)
(IC/IB=5)
1 –55˚C (Case Temp) 25˚C (Case Temp)
125˚C (Case Temp)
VBE(sat)
0 0.02
VCE(sat)
–55˚C ( 125˚C
0.05 0.1
0.5 1
Collector Current IC(A)
3
25˚CCase Temp) Collector Current IC(A)
125˚C (Case Temp) 25˚C (Case Temp) –55˚C (Case Temp)
I C– V BE Temperature Characteristics (Typical)
(VCE=4V) 3
2
1
0 0 0.2 0.4 0.6 0.8 1.0 1.2 Base-Emittor Voltage VBE(V)
h FE– I C Characteristics (Typical)
50 125˚C
(VCE=4V)
25˚C
–55˚C
10
5 0.01
0.05 0.1
0.5
Collector Current IC(A)
1
3
Switching Time ton•tstg•tf(µs)
t on• t stg• t f– I C Characteristics (Typical)
8
5
VCC 250V IC:IB1:–IB2
=2:0.3:1Const.
tstg
1
0.5
0.2 0.1
tf
ton 0.5 1
Collector Current IC(A)
3
Transient Thermal Resistance θ j-a( ˚ C / W )
θ j-a– t Characteristics
3
1 0.5 0.3
1
5 10
50 100
Time t(ms)
500 1000
Safe Operating Area (Single Pulse)
10
5 100µs
Reverse Bias Safe Operating Area
10
5
Pc–Ta Derating
80
60
Maximum Power Dissipation PC(W)
Collector Current IC(A)
Infinite heatsink With
1
0.5 Without Heatsink Natural Cooling
0.1 50
100 500 Collector-Emitter Voltage VCE(V)
1000
1
Without Heatsink 0.5 Natural Cooling
L=3mH IB2=–1.0A Duty:less than 1%
0.1 50
100 500 Collector-Emitter Voltage VCE(V)
1000
40
20
Without Heatsink 3.5
0 0 25 50
75
100 125
Ambient Temperature Ta(˚C)
150
67
Collector Current IC(A)
.