MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MUN5311DW1T1/D
Dual Bias Resistor Transistors
NPN and PNP...
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MUN5311DW1T1/D
Dual Bias Resistor
Transistors
NPN and
PNP Silicon Surface Mount
Transistors with Monolithic Bias Resistor Network
The BRT (Bias Resistor
Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital
transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1 series, two complementary BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium.
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
MUN5311DW1T1 SERIES
Motorola Preferred Devices
65 4
123 CASE 419B–01, STYLE 1
SOT–363
(3) (2) (1)
R1 Q1
R2 R1 (4) (5)
R2 Q2 (6)
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q2 (
PNP) omitted)
Rating
Symbol
Value
Unit
Collector-Base Voltage Collector-Emitter Voltage Collector Current THERMAL CHARACTERISTICS
VCBO
50
Vdc
VCEO
50
Vdc
IC 100 mAdc
Thermal Resistance — Junction-to-Ambient (surface mounted)
RθJA
Operating and Storage Temperature Range Total Package Dissipation @ TA = 25°C(1)
TJ, Tstg PD
DEVICE MARKING AND RESISTOR VALUES: MUN5311DW1T1 SERIES
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