LOW LEAKAGE SILICON DIODE
CMHD3595 SURFACE MOUNT
LOW LEAKAGE SILICON DIODE
SOD-123 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CEN...
Description
CMHD3595 SURFACE MOUNT
LOW LEAKAGE SILICON DIODE
SOD-123 CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD3595 is a silicon diode, manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high conductance applications requiring low leakage.
MARKING CODE: C95
MAXIMUM RATINGS: (TA=25°C) Peak Repetitive Reverse Voltage Peak Working Reverse Voltage Average Forward Current Continuous Forward Current Recurrent Peak Forward Current Peak Forward Surge Current, tp=1.0s Peak Forward Surge Current, tp=1.0μs Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
SYMBOL
VRRM VRWM
IO IF if IFSM IFSM PD TJ, Tstg ΘJA
150 125 150 225 600 500 4.0 400 -65 to +150 312.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN
IR IR IR IR BVR VF VF VF VF VF VF CJ trr
VR=125V VR=125V, TA=125°C VR=125V, TA=150°C VR=30V, TA=125°C IR=100μA IF=1.0mA IF=5.0mA IF=10mA IF=50mA IF=100mA IF=200mA VR=0, f=1.0MHz VR=3.5V, IF=10mA, RL=1.0kΩ
150 0.54 0.62 0.65 0.75 0.79 0.83
MAX 1.0 2.0 5.0 300
0.69 0.77 0.80 0.88 0.92 1.00 8.0 3.0
UNITS V V mA mA mA mA A
mW °C °C/W
UNITS nA μA μA nA V V V V V V V pF μs
R6 (17-June 2019)
CMHD3595 SURFACE MOUNT
LOW LEAKAGE SILICON DIODE
SOD-123 CASE - MECHANICAL OUTLINE
LEAD CODE 1) Cathode 2) Anode MARKING CODE: C95
w w w. c e n t r a l s e m i . c o m
R6 (17-June 2019)
OUTSTANDING SUPPORT AND SUPERIOR SERVICES
PRODUCT SUPPORT
...
Similar Datasheet