Document
S25FS128S S25FS256S
1.8 V, Serial Peripheral Interface with Multi-I/O, MirrorBit® Non-Volatile Flash
Features
Density – S25FS128S-128 Mbits (16 Mbytes) – S25FS256S-256 Mbits (32 Mbytes)
Serial Peripheral Interface (SPI) – SPI Clock polarity and phase modes 0 and 3 – Double Data Rate (DDR) option – Extended Addressing: 24- or 32-bit address options – Serial Command subset and footprint compatible with S25FL-A, S25FL-K, S25FL-P, and S25FL-S SPI families – Multi I/O Command subset and footprint compatible with S25FL-P, and S25FL-S SPI families
Read – Commands: Normal, Fast, Dual I/O, Quad I/O, DDR Quad I/O – Modes: Burst Wrap, Continuous (XIP), QPI – Serial Flash Discoverable Parameters (SFDP) and Common Flash Interface (CFI), for configuration information
Program – 256- or 512-byte Page Programming buffer – Program suspend and resume
Erase – Hybrid sector option – Physical set of eight 4-kbyte sectors and one 32-kbyte sector at the top or bottom of address space with all remaining sectors of 64 kbytes – Uniform sector option – Uniform 64-kbyte or 256-kbyte blocks for software compatibility with higher density and future devices – Erase suspend and resume – Erase status evaluation – 100,000 Program-Erase Cycles on any sector, minimum – 20 Year Data Retention, typical
Security Features – One-Time Program (OTP) array of 1024 bytes – Block Protection: – Status Register bits to control protection against program or erase of a contiguous range of sectors – Hardware and software control options – Advanced Sector Protection (ASP) – Individual sector protection controlled by boot code or password – Option for password control of read access
Technology – Spansion 65 nm MirrorBit Technology with Eclipse™ Architecture
Supply Voltage – 1.7V to 2.0V
Temperature Range
– Industrial (0°C to +85°C) – Industrial Plus (–40°C to +105°C)
Packages (All Pb-Free) – 8-lead SOIC 208 mil (SOC008) - FS128S only – WSON 6x5 mm (WND008) - FS128S only – WSON 6x8 mm (WNH008) - FS256S only – 16-lead SOIC 300 mil (SO3016- FS256S only) – BGA-24 6x8 mm – 5x5 ball (FAB024) footprint – 4x6 ball (FAC024) footprint – Known Good Die, and Known Tested Die
Cypress Semiconductor Corporation • 198 Champion Court Document Number: 002-00368 Rev. *G
• San Jose, CA 95134-1709 • 408-943-2600
Revised February 02, 2016
1. Performance Summary
Maximum Read Rates
Read Fast Read Dual Read Quad Read
Command
Maximum Read Rates DDR
DDR Quad I/O Read
Command
Typical Program and Erase Rates
Operation Page Programming (256-bytes Page Buffer) Page Programming (512-bytes Page Buffer) 4-kbyte Physical Sector Erase (Hybrid Sector Option 64-kbyte Physical Sector Erase (Hybrid Sector Option) 256-kbyte Sector Erase (Uniform Logical Sector Option
Typical Current Consumption (–40°C to +85°C)
Serial Read 50 MHz Serial Read 133 MHz Quad Read 133 MHz Quad DDR Read 80 MHz Program Erase Standby Deep Power-Down
Operation
S25FS128S S25FS256S
Clock Rate (MHz) 50 133 133 133
Mbytes / s
6.25 .