N-Channel MOSFET
MS10N65SJ 10A 650V N-Channel Super Junction MOSFET
GENERAL DESCRIPTION The MS10N65SJ is a N-channel enhancement-mode MOS...
Description
MS10N65SJ 10A 650V N-Channel Super Junction MOSFET
GENERAL DESCRIPTION The MS10N65SJ is a N-channel enhancement-mode MOSFET , providing the designer with the best combination of fast switching, super junction device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications
FEATURES
Low RDS(on) Ultra Low Gate Charge High dv/dt capability High Unclamped Inductive Switching (UIS) capability High peak current capability Increased transconductance performance Optimized design for high performance power systems
Absolute Maximum Ratings (Tc=25°C unless otherwise noted)
Parameter Continuous drain current Pulsed drain current Avalanche energy, single pulse Avalanche current, repetitive
MOSFET dv/dt ruggedness Gate source voltage
Power dissipation Operating and storage temperature
Symbol ID
ID, pulse E AS I AR
dv/dt VGS
Ptot Tj, Tstg
Value Tc=25oC Tc=25oC ID=8.3A limited by Tjmax VDS=480V, ID=9.5A, Tj=125oC
static AC (f>1Hz)
Tc=25oC
Operating Junction and Storage Temperature
a When mounted on 1inch square 2oz copper clad FR-4
9.5 28.5 340
5
50 ±20 ±30
95 -50 to +150
150
Unit A A mJ A
V/nS V V W °C °C
©Bruckewell Technology Corporation Rev. A -2013
MS10N65SJ 10A 650V N-Channel Super Junction MOSFET
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Test Conditions
Static Characteristics
VGS
VDS = VGS, ID=250μA
*RDS(ON)
VGS =10V,ID =4.75A
VGS=10V, ID=4.75A, Tj=150°C
...
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