N-Channel MOSFET
MS10N65
N-Channel Enhancement Mode Power MOSFET
Description
The MS10N65 is a N-channel enhancement-mode
MOSFET, prov...
Description
MS10N65
N-Channel Enhancement Mode Power MOSFET
Description
The MS10N65 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features BVDSS=700V typically @ Tj=150°C
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Application Power Factor Correction
LCD TV Power
Full and Half Bridge Power
Packing & Order Information
Graphic symbol
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
Drain Current -Continuous (TC=25°C) ID
Drain Current -Continuous (TC=100°C)
IDM Pulsed Drain Current
EAS Single Pulsed Avalanche Energy
EAR Repetitive Avalanche Energy
dV/dt
Peak Diode Recovery dV/dt
Drain current limited by maximum junction temperature
Value 650 ±30 9.5 6.0 38 700 15.6 5.5
Unit V V A A A mJ mJ
V/ns
Publication Order Number: [MS10N65]
© Bruckewell Technology Corporation Rev. A -2014
MS10N65
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings (Tc=25°C unless otherwise specified)
Symbol
Parameter
Power Dissipation (TC=25°C) PD
Power Dissipation (TC=100°C)
TJ/TSTG
Operating Junction and Storage Tempe...
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