MS10N80

MS10N80 800V N-Channel MOSFET Description The MS10N80 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications Features Originative New Design Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 46nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 1.10 Ω (Typ.) @VGS=10V 100% Avalanche Tested RoHS compliant package Packing & Order Information 50/Tube ; 1,000/Box Graphic symbol MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter VDSS Drain-Source Voltage VGS Gate-Source Voltage ID IDM EAS EAR IAR dv/dt Drain Current -Continuous (TC=25°C) Drain Current -Continuous (TC=100°C) Drain Current Pulsed Single Pulsed Avalanche Energy Repetitive Avalanche Energy Avalanche Current Peak Diode Recovery dv/dt Total Power Dissipation(@TC = 25 °C) 44 W PD Derating Factor above 25 °C Value 800 ±30 10 6.5 40 960 24 9.2 4.0 60 0.48 Unit V V A A A mJ mJ A V/ns W W/°C Publication Order Number: [MS10N80] © Bruckewell Technology Corporation Rev. A -2014 MS10N80 800V N-Channel MOSFET Absolute Maximum Ratings (Tc=25°C unless otherwise specified) Symbol Parameter TJ,TSTG Operating and Storage Temperature Range Maximum lead temperature for solderi...