P-Channel MOSFET
MS13P21
P-Channel 20-V (D-S) MOSFET
Description These miniature surface mount MOSFETs utilize a high cell density trench...
Description
MS13P21
P-Channel 20-V (D-S) MOSFET
Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SC70-3 saves board space Fast switching speed High performance trench technology RoHS compliant package Packing & Order Information 3,000/Reel
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Publication Order Number: [MS13P21]
© Bruckewell Technology Corporation Rev. A -2014
MS13P21
P-Channel 20-V (D-S) MOSFET
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings (TA=25°C unless otherwise specified)
Symbol
Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID Continuous Drain Currenta (TA=25°C) Continuous Drain Currenta (TA =70°C)
IDM Pulsed Drain Currentb
IS Continuous Source Current (Diode Conduction)a
Power Dissipationa (TA =25°C) PD Power Dissipationa (TA =70°C)
TJ/TSTG
Operating Junction and Storage Temperature
Value -20 ±8 -1.7 -1.4 -2.5
±0.28 0.34 0.22 -55 to +150
Unit V V A A A A W W °C
THERMAL RESISTANCE RATINGS
Symbol
Parameter
RTHJA
Maximum Junction-to-Ambient C/Wa (t <= 5 sec) Maximum Junction-to-Ambient C/Wa (Steady-State)
Notes a. Surface Mounted o...
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