MS13P21

MS13P21 P-Channel 20-V (D-S) MOSFET Description These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features Low rDS(on) provides higher efficiency and extends battery life Low thermal impedance copper leadframe SC70-3 saves board space Fast switching speed High performance trench technology RoHS compliant package Packing & Order Information 3,000/Reel Graphic symbol Publication Order Number: [MS13P21] © Bruckewell Technology Corporation Rev. A -2014 MS13P21 P-Channel 20-V (D-S) MOSFET MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Absolute Maximum Ratings (TA=25°C unless otherwise specified) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Currenta (TA=25°C) Continuous Drain Currenta (TA =70°C) IDM Pulsed Drain Currentb IS Continuous Source Current (Diode Conduction)a Power Dissipationa (TA =25°C) PD Power Dissipationa (TA =70°C) TJ/TSTG Operating Junction and Storage Temperature Value -20 ±8 -1.7 -1.4 -2.5 ±0.28 0.34 0.22 -55 to +150 Unit V V A A A A W W °C THERMAL RESISTANCE RATINGS Symbol Parameter RTHJA Maximum Junction-to-Ambient C/Wa (t <= 5 sec) Maximum Junction-to-Ambient C/Wa (Steady-State) Notes a. Surface Mounted o...