MS15N50
N-Channel Enhancement Mode Power MOSFET
Description
The MS15N50 is a N-channel enhancement-mode
MOSFET, prov...
MS15N50
N-Channel Enhancement Mode Power MOSFET
Description
The MS15N50 is a N-channel enhancement-mode
MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design,
low on-resistance and cost effectiveness. The TO-220
package is universally preferred for all
commercial-industrial applications
Features Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
RoHS compliant package
Application Power Factor Correction
Flat Panel Power
Full and Half Bridge Power Supplies Two-
Transistor Forward Power Supplies
Graphic symbol
Packing & Order Information
50/Tube ; 1,000/Box
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
Symbol
Parameter
Value
Unit
VDSS VGS
ID
Drain-Source Voltage Gate-Source Voltage Drain Current -Continuous (TC=25°C) Drain Current -Continuous (TC=100°C)
500 V ±30 V 15 A
9A
IDM Drain Current -Pulsed
60 A
IAR Avalanche Current
15 A
EAS Single Pulsed Avalanche Energy
750 mJ
EAR Repetitive Avalanche Energy
25 mJ
dV/dt
Peak Diode Recovery dV/dt
4.5 V/ns
TJ Storage Temperature Drain current limited by maximum junction temperature
Publication Order Number: [MS15N50]
150 °C © Bruckewell Technology Corporation Rev. A -2014
MS15N50
N-Channel Enhancement Mode Power MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Power Dissipation (TC=25°C) PD
Derate above 25C
TSTG
Operating Junction and Storage Temperature
Maxim...